Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts 0.75±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol Rating Unit VCBO 18 V Collector to emitter voltage VCEO 18 V Emitter to base voltage VEBO 5 V Peak collector current ICP 2 A Collector current IC 1 A Collector to base voltage Collector power dissipation * 3.05±0.1 ■ Features 11.0±0.5 3.8±0.3 φ 3.16±0.1 16.0±1.0 For low-voltage type medium output power amplification Complementary to 2SA0900 (2SA900) PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 2 1.76±0.1 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-126B Package 3 Note) *: Without heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 10 V, IE = 0 1 µA ICEO VCE = 18 V, IB = 0 10 µA Collector to base voltage VCBO IC = 10 µA, IE = 0 18 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 18 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 500 mA 90 hFE2 VCE = 2 V, IC = 1.5 A 50 Collector to emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA Base to emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA Collector cutoff current Transition frequency fT Collector output capacitance Cob V 280 100 0.5 1.2 V V VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz VCB = 6 V, IE = 0, f = 1 MHz 12 pF Note) *: Rank classification Rank Q R S hFE1 90 to 155 130 to 210 180 to 280 Note)The part number in the parenthesis shows conventional part number. 1 2SC1568 Power Transistors PC T a IC VCE 1.0 4 (1) 3 2 (2) 1 IB=5.0mA 0.8 4.5mA 4.0mA 3.5mA 0.6 3.0mA 2.5mA 2.0mA 1.5mA 0.4 1.0mA 0.2 0.8 0.6 0.4 0.2 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC VBE(sat) IC hFE IC IC/IB=20 10 3 1 0.3 0.1 TC=100˚C 25˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 IC/IB=10 TC=100˚C 1 –25˚C 0.3 25˚C 0.1 0.03 Collector current IC (A) 0.03 0.1 0.3 f T IE 3 0.03 100 75 50 25 Emitter current IE (mA) –100 0.3 1 3 ICBO Ta VCB=10V IE=0 f=1MHz TC=25˚C 40 103 30 20 102 10 10 0 –30 0.1 104 ICBO (Ta) ICBO (Ta=25˚C) 125 Collector output capacitance Cob (pF) 150 –10 10 Cob VCB VCB=6V f=200MHz TC=25˚C –3 30 Collector current IC (A) 50 175 –25˚C 25˚C 100 1 0.01 3 1 TC=100˚C 300 Collector current IC (A) 200 0 –1 VCE=2V 3 0.01 0.01 3 12 1000 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 1.0 0.5mA 0 Transition frequency fT (MHz) VCE=2V TC=25˚C Collector current IC (A) 5 1.2 TC=25˚C (1)With a 100×100×2mm Al heat sink (2)Without heat sink Class B push pull 0 2 IC I B 1.2 Collector current IC (A) Collector power dissipation PC (W) 6 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Power Transistors 2SC1568 ICEO Ta 105 Area of safe operation (ASO) 10 VCE=18V Single pulse TC=25˚C 3 ICP Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 103 102 1 t=10ms IC t=1s 0.3 DC 0.1 0.03 0.01 10 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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