C20F 2.0µm 5/40V CMOS Process C20F Overview Thick gate oxide Double poly, two layer metal P-type epitaxy over p+ substrate Allows the integration of 5V CMOS with 40V CMOS which can operate with 40V on both gate and drain. Features Full integration of 5V and 40V mixed signal CMOS on the same die Single and double drain extensions on 40V NMOS and 40V PMOS 40V double poly capacitor High Value (10k:/sq) and Low TCR poly resistor options Mixed signal Cadence Foundry Design Kit (FDK) available Mixed Signal Capabilities 40V double poly capacitor (0.48fF/µm²) High value poly resistor option (10k:/sq) 5V 2µm CMOS 40V CMOS Propogation delay:-1.15nS/stage for single extended 2.0nS/stage for double extended Applications EL displays CCD Drivers Motor Control Instrumentation Telecom line cards Layout Rules Layer Poly 1 Poly 2 Contact Metal 1 Via Metal 2 Width (µm) 2 2 2x2 2.0 2.4 x 2.4 2.8 Space (µm) 2.5 2 2 2.0 2.0 2.4 Simplified Cross-Section of 40V CMOS B p+ 40V N XF G S n+ n -exte n d ed 40V PXF D n+ n -exte n d ed p -e p ita xy B n+ S G D p+ p+ p -exten d e d p -exten d e d n -w e ll p -e p ita xy 26-Sep-02 03-70-00148-00 www.dalsa.com 1 C20F 2.0µm 5/40V CMOS Process DALSA Semiconductor • C20F 5/40V CMOS Process Electrical Parameters of Representative Transistors Parameter W x L (Pm) VT (V) Ids (mA) Bvdss (V) Isub (PA/Pm) RON (:) 5V PMOS 40V NMOS 40V PMOS 50 X 2 50 X 2 50 X 10 50 X 6 1.3 1.7 1.3 1.6 3.0 0.9 9.5 9.0 15 18 79 46 0.0006 - 1.94 - 589 2200 1100 1400 Double Extended 40V NMOS (L=10µm, W=50µm) Double Extended 40V PMOS (L=6µm, W=50µm) For More Information DALSA Semiconductor 18 Blvd de l’aéroport Bromont Quebec Canada J2L 1S7 26-Sep-02 03-70-00148-00 www.dalsasemi.com 5V NMOS Tel : +01 800 718 9701 Fax : +01 450 534 3201 e-mail: [email protected] www.dalsasemi.com