ETC C30D

3 Micron CMOS Process Family
Features
Process parameters
3µm
• LOVMOS Process [3Volts (2.7~3.6) Low Voltage Option]
Units
• Double Poly / Double Metal
10 & 5 & 3volts
• 6 µm Poly Pitch; 7 µm Metal Pitch
Metal I pitch (line/space)
3/4
µm
• 7 Volts Maximum Operating Voltage
Metal II pitch (line/space)
3/4
µm
• 10 Volts High Voltage Option
Poly pitch (line/space)
3/3
µm
• ProToDuctionTM Option for low cost prototypes,
Contact
3x3
µm
• 150 mm wafers.
Via
3x3
µm
Gate geometry
3
µm
P-well junction depth
4
µm
N+ junction depth
0.40
µm
P+ junction depth
0.55
µm
Gate oxide thickness
470
Å
Inter poly oxide thick.
650
Å
Description
The Dalsa Semiconductor 3µm CMOS double poly / double
metal process family offers three operating voltage options. The
standard process has a maximum operating voltage of 7 volts
while the high voltage option allows 11 volts operation. The
third option is aimed at the 3 volts market. It offers low and
matched threshold voltages for improved dynamic range
needed in mixed analog/digital applications.
MOSFET Electrical parameters
3 MICRON - 10 volts
Vt (50x3µm)
3 MICRON - 5 volts
3 MICRON - 3 volts
N Channel
min. typ. max.
P Channel
min. typ. max.
N Channel
min. typ. max.
P Channel
min. typ. max.
0.6
0.6
0.6
0.6
0.8
1.0
0.8
1.0
0.8
1.0
0.8
1.0
Units
Conditions
0.35 0.50 0.65
V
saturation region
10 V : Vds=Vgs=5v
3&5 V: Vds=Vgs=3v
N Channel
min. typ. max.
P Channel
min. typ. max.
0.35 0.50 0.65
Ids
(50x3µm)
82
36
22
9
42
17
µA/µm
Body
factor
(50x50µm)
0.5
0.6
0.6
0.4
0.5
0.2
√v
14
V
Ids = 1µA
92
mV/
dec
5v : Vds=0.1v
3v : Vds=3.6v
18
V
Ids = 14µA
2.2
µm
L drawn = 3µm
Bvdss
16
Subthres.
Slope
Field thresh.
L effective
21
16
94
12
20
2.9
www.dalsasemi.com
18
10
100
12
19
2.5
16
10
120
12
27
2.4
18
10
110
12
19
16
10
92
12
2.2
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
26
2.4
12
Tel :
Fax
email:
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
dalsasales@dalsasemi.com
3 Micron CMOS Process Family(cont’d)
Resistances (Ω /sq.)
Capacitances (fF/µm2)
3 µm
5 volts & 3 volts
min.
3 µm
5 volts & 3 volts
typ.
Pwell
max.
17000
min.
typ.
max.
Inter-poly
0.44
0.54
0.63
0.69
0.73
0.78
Pfield in Pwell
2400
3600
4800
Gate oxide
N+
20
28
35
N+ Junction
0.17
P+
80
100
120
P+ Junction
0.12
Poly gate
15
23
30
Poly capacitor
75
100
125
Metal I
0.038
Metal II
0.038
Bipolar gain1
3 µm - 5 volts
min.
typ.
NPN vertical
1 Test
max.
700
condition : Vce = 5 volts
FIG 1 : I-V Characteristics for a 50x3µm N-MOSFET
(3µm 5 volts process)
FIG 2 : I-V Characteristics for a 50x3µm P-MOSFET
(3µm 5 volts process)
5
-2.0
Vgs = 5 volts
Vgs = -5 volts
4
-1.5
Vgs = -4 volts
3
2
Ids (mA)
Vgs = 3 volts
-1.0
Vgs = -3 volts
-0.5
1
Vgs = 2 volts
Vgs = -2 volts
0
0
0
1
2
3
4
5
0
-1
-2
Vds (volts)
FIG 3 : Subthreshold Characteristics at Vds=0.1 volts
for a 50x3µm N-MOSFET (3µm 5 volts Process)
10-03
100
-5
10-04
-36
-05
10
10-05
-30
10-06
75
10-06
50
10-09
10-10
25
-11
Ids (A)
10-08
Ids (mA)
10-07
10-07
Ids (A)
-4
FIG 4 : Subthreshold Characteristics at Vds=-0.1 volts
for a 50x3µm P-MOSFET (3µm 5 volts Process)
10-04
10
-3
Vds (volts)
-24
10-08
-18
10-09
10-10
-12
10-11
-6
10-12
10-12
10-13
0
0.5
1.0
1.5
0
2.0
10-13
0
Vgs (volts)
Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements.
For full process specifications contact a Dalsa Semicoonductor sales office or representative.
-0.5
-1.0
Vgs (volts)
-1.5
-0
-2.0
Ids (mA)
Ids (mA)
Vgs = 4 volts