ETC UN1117S

Transistors with built-in Resistor
UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L)
Unit: mm
6.9±0.1
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
3
0.45±0.05
2
2.5
●
●
●
●
●
●
●
●
●
●
●
●
●
●
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
UNR1110
UNR111D
UNR111E
UNR111F
UNR111H
UNR111L
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
■ Absolute Maximum Ratings
4.1±0.2
2.4±0.2 2.0±0.2
0.55±0.1
1
2.5
■ Resistance by Part Number
●
4.5±0.1
3.5±0.1
7
0.85
1.25±0.05
●
1.0
0.4
■ Features
●
1.0
1.5 R0.9
R0.9
0.
1.0±0.1
For digital circuits
1.5
R
Silicon PNP epitaxial planer transistor
2.5±0.1
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
C
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Conditions
min
typ
ICBO
VCB = –50V, IE = 0
– 0.1
µA
VCE = –50V, IB = 0
– 0.5
µA
UNR1111
– 0.5
UNR1112/1114/111E/111D
– 0.2
– 0.1
UNR1115/1116/1117/1110
IEBO
VEB = –6V, IC = 0
– 0.01
UNR111F/111H
–1.0
UNR1119
–1.5
UNR1118/111L
mA
–2.0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
50
V
UNR1111
Forward
current
transfer
ratio
35
UNR1112/111E
60
UNR1113/1114
80
UNR1115*/1116*/1117*/1110*
hFE
VCE = –10V, IC = –5mA
UNR111F/111D/1119/111H
VCE(sat)
IC = –10mA, IB = – 0.3mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
– 0.25
–4.9
UNR1113
UNR111D
VOL
– 0.2
VCC = –5V, VB = –3.5V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –10V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –6V, RL = 1kΩ
UNR111E
Transition frequency
fT
80
10
UNR1112/1117
22
UNR1113/1110/111D/111E
MHz
47
(–30%)
R1
4.7
UNR1118
0.51
UNR1119
1
UNR111H
(+30%)
2.2
UNR1111/1112/1113/111L
0.8
1.0
1.2
UNR1114
0.17
0.21
0.25
UNR1118/1119
0.08
0.1
0.12
R1/R2
UNR111D
V
– 0.2
VCB = –10V, IE = 2mA, f = 200MHz
UNR1111/1114/1115
UNR1116/111F/111L
V
V
VCC = –5V, VB = –2.5V, RL = 1kΩ
Output voltage low level
Resistance
ratio
460
20
Collector to emitter saturation voltage
Input
resistance
160
30
UNR1118/111L
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17
* hFE rank classification (UNR1115/1116/1117/1110)
2
Unit
ICEO
UNR1113
Emitter
cutoff
current
max
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
0.22
0.27
kΩ
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UNR1111
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–120
–0.8mA
–0.7mA
–100
–0.6mA
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
(V)
–3
–10
–30
25˚C
120
–25˚C
80
40
0
–1
–100
–3
–10000
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
Ta=75˚C
VCE=–10V
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
Ta=75˚C
25˚C
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
3
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Characteristics charts of UNR1112
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–140
–120
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
300
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
Ta=75˚C
25˚C
VCE=–10V
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector to emitter saturation voltage VCE(sat) (V)
–160
hFE — IC
400
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UNR1113
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–120
–0.5mA
–100
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
4
–12
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE=–10V
Forward current transfer ratio hFE
IB=–1.0mA
–140
Collector to emitter saturation voltage VCE(sat) (V)
–160
Ta=75˚C
300
25˚C
200
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
UNR1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Cob — VCB
IO — VIN
4
3
2
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1114
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–140
IB=–1.0mA
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–0.2mA
–40
–0.1mA
–20
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–1
–3
–10
–10000
–30
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
VO=–5V
Ta=25˚C
–1000
–3000
–300
–1000
–100
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
200
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
300
Collector current IC (mA)
Cob — VCB
6
VCE=–10V
–25˚C
–0.01
–0.1 –0.3
–12
hFE — IC
400
Forward current transfer ratio hFE
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–30
–10
–3
–1
1
–0.3
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.1
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
5
UNR1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UNR1115
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
Collector current IC (mA)
–140
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–0.4mA
–80
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE=–10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1116
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–0.8mA
–120
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
6
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–160
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Cob — VCB
IO — VIN
–10000
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
Collector to base voltage VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1117
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Collector current IC (mA)
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
Ta=75˚C
–1
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–3
–10
200
Ta=75˚C
25˚C
100
–25˚C
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–120
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
7
UNR1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UNR1118
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–160
–0.8mA
–0.7mA
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1119
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–80
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
8
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
160
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Cob — VCB
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1110
IC — VCE
VCE(sat) — IC
–100
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–12
Collector to emitter voltage VCE (V)
–3
–10
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–100
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
–120
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
9
UNR1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UNR111D
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.2mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–20
–0.1mA
–10
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
0
–12
–1
Cob — VCB
–30
25˚C
–25˚C
80
40
0
–1
–100
Ta=75˚C
120
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE=–10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–1.5
–100
Collector to base voltage VCB (V)
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR111E
IC — VCE
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.6mA
–0.5mA
–0.4mA
–20
–0.2mA
–0.1mA
–10
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
10
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
400
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA –0.7mA
VCE(sat) — IC
–100
Collector to emitter saturation voltage VCE(sat) (V)
–60
–100
300
200
Ta=75˚C
100
0
–1
25˚C
–25˚C
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Cob — VCB
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–1.5
–100
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR111F
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector current IC (mA)
–200
–160
–120
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
–10000
–30
Ta=75˚C
25˚C
80
–25˚C
40
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
11
UNR1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UNR111H
IC — VCE
VCE(sat) — IC
–120
–80
IB=–0.5mA
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
IC/IB=10
–10
–1
Ta=75˚C
25˚C
–0.1
–25˚C
–0.01
–1
–12
Collector to emitter voltage VCE (V)
–3
–30
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–0.1 –0.3
–100 –300 –1000
–1
–3
–10
–30
–100
Collector current IC (mA)
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
Input voltage VIN (V)
5
–10
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
240
Forward current transfer ratio hFE
Collector current IC (mA)
–100
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
Collector output capacitance Cob (pF)
hFE — IC
–100
4
3
2
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
–30
Collector to base voltage
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
VCB (V)
Characteristics charts of UNR111L
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
–160
IB=–1.0mA
–120
–0.8mA
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
12
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
25˚C
–0.3
–25˚C
–0.1
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Transistors with built-in Resistor
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
5
Input voltage VIN (V)
Collector output capacitance Cob (pF)
6
4
3
2
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
13
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2001 MAR