ETC UN2216R

Transistors with built-in Resistor
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
(UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z)
Silicon NPN epitaxial planer transistor
Unit: mm
+0.2
2.8 –0.3
+0.25
0.65±0.15
1.5 –0.05
0.65±0.15
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
■ Absolute Maximum Ratings
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.45
0.95
+0.1
0.4 –0.05
+0.1
0.16 –0.06
1.1 –0.1
Marking Symbol (R1)
UNR2211
8A
10kΩ
UNR2212
8B
22kΩ
UNR2213
8C
47kΩ
UNR2214
8D
10kΩ
UNR2215
8E
10kΩ
UNR2216
8F
4.7kΩ
UNR2217
8H
22kΩ
UNR2218
8I
0.51kΩ
UNR2219
8K
1kΩ
UNR2210
8L
47kΩ
UNR221D
8M
47kΩ
UNR221E
8N
47kΩ
UNR221F
8O
4.7kΩ
UNR221K
8P
10kΩ
UNR221L
8Q
4.7kΩ
UNR221M
EL
2.2kΩ
UNR221N
EX
4.7kΩ
UNR221T
EZ
22kΩ
UNR221V
FD
2.2kΩ
UNR221Z
FF
4.7kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
●
2
+0.2
■ Resistance by Part Number
3
0.8
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
0.95
+0.2
■ Features
●
1.9±0.2
2.9 –0.05
For digital circuits
EIAJ:SC-59
Mini Type Package
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
Conditions
typ
max
Unit
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
UNR2211
0.5
UNR2212/2214/221E/221D/221M/221N/221T
0.2
UNR2213
0.1
UNR2215/2216/2217/2210
0.01
UNR221F/221K
IEBO
VEB = 6V, IC = 0
1.0
UNR2219
1.5
UNR2218/221L/221V
2.0
UNR221Z
0.4
mA
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Forward
current
transfer
ratio
UNR2211
35
UNR2212/221E
60
UNR2213/2214/221M
80
UNR2215*/2216*/2217*/2210*
160
UNR221F/221D/2219
hFE
460
30
20
UNR221N/221T
80
400
UNR221V
60
200
UNR221V
Output voltage high level
VCE(sat)
VOH
Output voltage low level
IC = 10mA, IB = 0.3mA
0.25
IC = 10mA, IB = 1.5mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
0.04
UNR221D
VOL
UNR221E
Transition frequency
V
V
VCC = 5V, VB = 3.5V, RL = 1kΩ
0.2
VCC = 5V, VB = 10V, RL = 1kΩ
0.2
V
0.2
VCB = 10V, IE = –2mA, f = 200MHz
150
UNR2211/2214/2215/221K
10
UNR2212/2217/221T
22
UNR2213/221D/221E/2210
UNR2216/221F/221L/221N/221Z
—
0.2
VCC = 5V, VB = 6V, RL = 1kΩ
fT
0.25
4.9
VCC = 5V, VB = 2.5V, RL = 1kΩ
UNR2213/221K
Input
resistance
VCE = 10V, IC = 5mA
UNR2218/221K/221L
Collector to emitter saturation voltage
MHz
47
R1
(–30%)
4.7
UNR2218
0.51
UNR2219
1
UNR221M/221V
2.2
* hFE rank classification (UNR2215/2216/2217/2210)
2
min
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
(+30%)
kΩ
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
■ Electrical Characteristics (continued)
Parameter
Symbol
Conditions
min
typ
max
UNR2211/2212/2213/221L
0.8
1.0
1.2
UNR2214
0.17
0.21
0.25
UNR2218/2219
0.08
0.1
0.12
UNR221D
Resistance
ratio
(Ta=25˚C)
4.7
UNR221E
UNR221F/221T
Unit
2.14
R1/R2
0.47
UNR221K
2.13
UNR221M
0.047
UNR211N
0.1
UNR211V
1.0
UNR211Z
0.21
3
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UNR2211
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
140
0.7mA
0.6mA
0.5mA
120
100
0.4mA
0.3mA
80
60
0.2mA
40
20
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
Collector to emitter voltage VCE (V)
Ta=75˚C
200
25˚C
–25˚C
100
3
10
30
1
100
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
0.3
Cob — VCB
6
Ta=75˚C
0.1
0.01
0.1
12
hFE — IC
400
Forward current transfer ratio hFE
160
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2212
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
140
IB=1.0mA
0.9mA
0.8mA
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
Collector to emitter voltage VCE (V)
1
3
10
Ta=75˚C
200
25˚C
–25˚C
100
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
0.3
Cob — VCB
6
Ta=75˚C
0.1
0.01
0.1
0
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR2213
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
120
0.9mA
0.8mA
0.7mA
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
–25˚C
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
5
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR2214
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
80
0.4mA
60
0.3mA
40
0.2mA
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
0
–25˚C
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
3
10
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
6
300
0
0.3
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2215
IC — VCE
VCE(sat) — IC
100
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
1
3
10
Ta=75˚C
250
200
25˚C
150
–25˚C
100
50
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
140
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR2216
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
7
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
IO — VIN
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UNR2217
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
100
80
0.4mA
0.3mA
0.2mA
60
40
20
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
250
200
Ta=75˚C
150
25˚C
–25˚C
100
50
1
3
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
0.3
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
8
350
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Collector to emitter saturation voltage VCE(sat) (V)
120
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2218
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
160
120
0.6mA
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
Collector to emitter voltage VCE (V)
25˚C
–25˚C
40
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
3
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
160
120
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Collector to emitter saturation voltage VCE(sat) (V)
200
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
VCE(sat) — IC
100
240
Ta=25˚C
1.2
Input voltage VIN (V)
Characteristics charts of UNR2219
IC — VCE
Collector current IC (mA)
Ta=75˚C
80
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
120
0
1
0.3
Cob — VCB
6
VCE=10V
–25˚C
0.01
0.1
12
hFE — IC
160
hFE — IC
160
IC/IB=10
30
VCE=10V
Forward current transfer ratio hFE
Collector current IC (mA)
200
Collector to emitter saturation voltage VCE(sat) (V)
100
Forward current transfer ratio hFE
240
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
120
Ta=75˚C
80
25˚C
–25˚C
40
–25˚C
0.01
0.1
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
9
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
4
3
2
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR2210
IC — VCE
VCE(sat) — IC
100
Ta=25˚C
Collector current IC (mA)
50
40
30
0.4mA
0.5mA
0.6mA
0.7mA
0.3mA
0.1mA
20
10
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
Collector to emitter voltage VCE (V)
Ta=75˚C
250
25˚C
200
–25˚C
150
100
50
3
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
10
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
350
0
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
60
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221D
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
25
IB=1.0mA
20
15
0.2mA
0.1mA
10
5
Collector to emitter saturation voltage VCE(sat) (V)
100
Ta=25˚C
0.9mA
0.8mA
0.5mA
0.7mA
0.4mA
0.6mA
0.3mA
0
0
2
4
6
8
10
10
3
1
0.3
–25˚C
0.03
25˚C
–25˚C
80
40
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
3
10000
4
Ta=75˚C
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
1
0.3
Cob — VCB
6
Ta=75˚C
25˚C
0.1
Collector to emitter voltage VCE (V)
160
IC/IB=10
30
0.01
0.1
12
hFE — IC
Forward current transfer ratio hFE
30
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR221E
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
50
40
0.3mA
0.4mA
0.5mA
30
0.2mA
0.1mA
20
10
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
160
VCE=10V
Forward current transfer ratio hFE
IB=1.0mA
0.7mA Ta=25˚C
0.9mA
0.6mA
0.8mA
100
Collector to emitter saturation voltage VCE(sat) (V)
60
Ta=75˚C
120
25˚C
–25˚C
80
40
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
11
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR221F
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
0.9mA
0.8mA
0.7mA
0.6mA
160
120
IB=1.0mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
Ta=75˚C
1
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
25˚C
–25˚C
40
1
3
10
30
1
100
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
80
0
0.3
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
12
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221K
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.2mA
120
1.0mA
0.8mA
80
0.6mA
0.4mA
40
0.2mA
0
0
2
4
6
8
10
IC/IB=10
10
1
25˚C
–25˚C
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
1
3
10
30
100
300
1000
1
Collector current IC (mA)
3
10
30
100
300
1000
Collector current IC (mA)
VIN — IO
100
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=0.2V
Ta=25˚C
30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
12
Cob — VCB
5
Ta=75˚C
0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
10
3
1
0.3
0.1
1
0.03
0
3
1
10
30
Collector to base voltage
0.01
0.1
100
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR221L
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.0mA
0.8mA
120
0.6mA
80
0.4mA
40
0.2mA
0
hFE — IC
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
–25˚C
0.01
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
240
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
200
Ta=75˚C
160
25˚C
120
–25˚C
80
40
0
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
13
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
100
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
5
Input voltage VIN (V)
Collector output capacitance Cob (pF)
6
4
3
2
10
1
0.1
1
0.01
0.1
0
3
1
10
30
100
1
0.3
3
10
30
100
Output current IO (mA)
VCB (V)
Collector to base voltage
Characteristics charts of UNR221M
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
0.7mA
160
0.6mA
0.5mA
0.4mA
0.3mA
120
0.2mA
80
0.1mA
40
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0
–25˚C
0.01
0.003
2
4
6
8
10
400
300
Ta=75˚C
25˚C
200
–25˚C
100
0
1
12
3
10
30
100
300
1
1000
Cob — VCB
3
IO — VIN
104
5
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Collector to emitter voltage VCE (V)
VO=0.2V
Ta=25˚C
30
4
3
2
103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
VCE=10V
0.001
0
102
101
10
3
1
0.3
0.1
1
0.03
0
0.1
0.3
1
3
10
Collector to base voltage
14
500
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
hFE — IC
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221N
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
140
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
120
100
80
0.3mA
60
0.2mA
40
0.1mA
20
IC/IB=10
VCE=10V
1
Ta=75˚C
0.1
25˚C
–25˚C
0.01
0
0
2
4
6
8
10
100
25˚C
240
–25˚C
160
80
1000
10
1
3
2
1000
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
Output current IO (µA)
4
100
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
5
Ta=75˚C
320
Collector current IC (mA)
Cob — VCB
6
400
0
10
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
480
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
10
1
1
0.4
100
Collector to base voltage
VCB (V)
0.6
0.8
1
1.2
0.01
0.1
1.4
Input voltage VIN (V)
1
10
100
Output current IO (mA)
Characteristics charts of UNR221T
IC — VCE
VCE(sat) — IC
160
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
120
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
hFE — IC
1
Ta=75˚C
0.1
25˚C
–25˚C
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
VCE=10V
400
Ta=75˚C
320
25˚C
240
–25˚C
160
80
0
0.01
0
480
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
10
1
10
100
Collector current IC (mA)
1000
1
10
100
1000
Collector current IC (mA)
15
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
10
1
1
0.4
100
Collector to base voltage
VCB (V)
0.6
0.8
1
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR221V
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
120
IB=1.0mA
100
0.9mA
0.8mA
0.7mA
80
0.6mA
60
0.5mA
40
0.4mA
20
0.3mA
0.2mA
0
0
2
4
6
8
10
IC/IB=10
1
Ta=75˚C
0.1
25˚C
–25˚C
100
Ta=75˚C
120
25˚C
80
–25˚C
40
1
1000
4
3
2
100
1000
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
160
Collector current IC (mA)
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
1
10
Collector to base voltage
16
200
0
10
1
Cob — VCB
5
VCE=10V
0.01
12
Collector to emitter voltage VCE (V)
6
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
100
VCB (V)
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
1.4
0.01
0.1
1
10
Output current IO (mA)
100
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221Z
IC — VCE
VCE(sat) — IC
10
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
120
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
1
Ta=75˚C
0.1
25˚C
–25˚C
0
2
4
6
8
10
10
1
12
100
Collector current IC (mA)
Cob — VCB
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
5
4
3
2
320
Ta=75˚C
240
25˚C
–25˚C
160
80
1
1000
Collector to emitter voltage VCE (V)
6
400
0
0.01
0
Collector output capacitance Cob (pF)
VCE=10V
10
100
1000
Collector current IC (mA)
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
Collector current IC (mA)
140
480
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
hFE — IC
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
–1
–10
Collector to base voltage
–100
VCB (V)
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
1.4
0.01
0.1
1
10
100
Output current IO (mA)
17
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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