Transistors with built-in Resistor UNR2121/2122/2123/2124/212X/212Y (UN2121/2122/2123/2124/212X/212Y) Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 5˚ ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 0 to 0.1 • • • • • • 10˚ Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Internal Connection R1 C B R2 E ■ Electrical Characteristics Ta = 25°C Parameter Collector cutoff current Symbol Conditions ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 IEBO VEB = −6 V, IC = 0 Min UNR2121 Unit −1 µA −1 −5 cutoff UNR2122/212X/212Y −2 current UNR2123/2124 −1 Collector to base voltage µA − 0.5 UNR212X Emitter Max − 0.1 UNR212X Collector cutoff current Typ VCBO hFE IC = −10 µA, IE = 0 −50 VCE = −10 V, IC = −100 mA 40 Forward UNR2121 current UNR2122/212Y 50 transfer UNR2123/2124 60 ratio UNR212X 20 mA V Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2002 SJH00008BED 1 UNR2121/2122/2123/2124/212X/212Y ■ Electrical Characteristics (continued) Ta = 25°C Parameter Symbol Collector to emitter saturation voltage VCE(sat) UNR212X Conditions Min Max Unit IC = −100 mA, IB = −5 mA − 0.25 V IC = −10 mA, IB = − 0.3 mA − 0.25 IC = −50 mA, IB = −5 mA UNR212Y Output voltage high level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω Output voltage low level − 0.15 −4.9 V VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz Input UNR2121/2124 R1 resis- UNR2122 tance UNR2123 10 UNR212X 0.27 − 0.2 200 −30% 0.8 0.22 UNR212X 0.054 UNR2!12Y 0.67 PT T a Total power dissipation PT (mW) 1.0 UNR2124 250 200 150 100 50 0 20 40 60 +30% 3.1 R1/R2 Common characteristics chart 0 2.2 80 100 120 140 160 Ambient temperature Ta (°C) SJH00008BED V MHz 4.7 UNR212Y Resistance ratio 2 Typ 1.2 kΩ UNR2121/2122/2123/2124/212X/212Y Characteristics charts of UNR2121 IC VCE VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA −160 −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −3 −1 Ta = 75°C 25°C − 0.1 − 0.2 mA 0 IC / IB = 10 −30 − 0.3 − 0.3 mA −40 − 0.03 −10 −12 − 0.01 −1 4 −3 −10 −30 −100 −300 −1 000 25°C −3 −10 −100 −3 000 −30 −1 000 −10 −300 −100 −3 −1 − 0.1 −10 Collector to base voltage VCB (V) VO = − 0.2 V Ta = 25°C − 0.3 −30 −1 − 0.4 −100 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C − 0.03 −3 −30 −30 Collector current IC (mA) 2 −10 100 0 −1 Input voltage VIN (V) 6 −3 200 −25°C −10 000 Output current IO (µA) Collector output capacitance Cob (pF) 8 −1 Ta = 75°C IO VIN f = 1 MHz IE = 0 Ta = 25°C 0 − 0.1 − 0.3 300 −25°C Cob VCB 10 VCE = −10 V Collector current IC (mA) Collector to emitter voltage VCE (V) 12 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector to emitter saturation voltage VCE(sat) (V) −240 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 − 0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2122 IC VCE VCE(sat) IC −100 Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA −200 − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −100 − 0.2 mA −50 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) IC / IB = 10 −30 −10 −3 −1 Ta = 75°C − 0.3 25°C − 0.1 −25°C − 0.03 − 0.01 −1 hFE IC 160 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) SJH00008BED Ta = 75°C VCE = −10 V Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −300 120 25°C 80 −25°C 40 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 3 UNR2121/2122/2123/2124/212X/212Y Cob VCB IO VIN −10 000 f = 1 MHz IE = 0 Ta = 25°C 16 12 8 −30 −1 000 −10 4 −300 −100 −30 −1 −3 −10 −30 −10 −1 − 0.4 −100 VO = − 0.2 V Ta = 25°C −3 −1 − 0.3 − 0.1 −3 0 − 0.1 − 0.3 −100 −3 000 Output current IO (µA) 20 VIN IO VO = −5 V Ta = 25°C Input voltage VIN (V) Collector output capacitance Cob (pF) 24 − 0.03 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 − 0.3 Input voltage VIN (V) Collector to base voltage VCB (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR2123 IC VCE VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −10 −3 −1 Ta = 75°C − 0.3 25°C − 0.1 − 0.03 − 0.01 −1 −3 −10 8 4 −3 −10 0 −1 −100 −300 −1 000 −3 −10 000 −30 −100 −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 −300 −100 −30 VO = − 0.2 V Ta = 25°C −3 −1 − 0.3 −10 −1 − 0.4 −10 Collector current IC (mA) − 0.1 −3 Collector to base voltage VCB (V) 4 −30 Input voltage VIN (V) 12 −1 50 IO VIN 16 0 − 0.1 − 0.3 −25°C 100 Collector current IC (mA) Output current IO (µA) Collector output capacitance Cob (pF) 20 150 −25°C Cob VCB f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C VCE = −10 V 25°C −30 Collector to emitter voltage VCE (V) 24 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C −100 Collector to emitter saturation voltage VCE(sat) (V) −240 − 0.03 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00008BED −1.4 − 0.01 − 0.1 − 0.3 −1 −3 −10 −30 Output current IO (mA) −100 UNR2121/2122/2123/2124/212X/212Y Characteristics charts of UNR2124 IC VCE VCE(sat) IC Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −200 −150 − 0.5 mA − 0.4 mA −100 − 0.3 mA − 0.2 mA −50 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −30 −3 −1 Ta = 75°C − 0.3 25°C − 0.1 − 0.03 − 0.01 −1 −3 −10 25°C 150 −25°C 100 0 −1 −100 −300 −1 000 −3 12 8 VO = −5 V Ta = 25°C −30 −1 000 −10 −300 −100 VO = − 0.2 V Ta = 25°C −3 −1 − 0.3 −30 − 0.1 −10 −1 − 0.4 −100 −100 −300 −1 000 VIN IO − 0.03 −3 −30 −30 −100 −3 000 4 −10 Collector current IC (mA) Input voltage VIN (V) 16 −10 Ta = 75°C 200 IO VIN 20 −3 250 Collector current IC (mA) Output current IO (µA) Collector output capacitance Cob (pF) −30 −10 000 f = 1 MHz IE = 0 Ta = 25°C −1 300 50 −25°C Cob VCB 0 − 0.1 − 0.3 VCE = −10 V 350 −10 Collector to emitter voltage VCE (V) 24 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector to emitter saturation voltage VCE(sat) (V) −300 − 0.6 Collector to base voltage VCB (V) − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 − 0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR212X IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = −1.6 mA −160 −1.4 mA −1.2 mA −120 −1.0 mA − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) hFE IC IC / IB = 10 −30 −10 −3 −1 − 0.3 Ta = 75°C 25°C − 0.1 – 25°C − 0.03 − 0.01 −1 240 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) SJH00008BED Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −240 VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 5 UNR2121/2122/2123/2124/212X/212Y Cob VCB Collector output capacitance Cob (pF) 24 VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C VO = − 0.2 V Ta = 25°C −30 Input voltage VIN (V) 20 16 12 8 4 −10 −3 −1 − 0.3 − 0.1 − 0.03 0 −1 −3 −10 −30 −100 − 0.01 − 0.1 − 0.3 Collector to base voltage VCB (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR212Y IC VCE VCE(sat) IC Collector current IC (mA) −200 IB = −1.2 mA −160 −1.0 mA − 0.8 mA −120 − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −30 −10 −3 −1 − 0.3 Ta = 75°C 25°C − 0.1 −25°C − 0.03 − 0.01 −1 Collector to emitter voltage VCE (V) −3 −10 −100 16 12 VO = − 0.2 V Ta = 25°C −10 −3 −1 − 0.3 8 − 0.1 4 − 0.03 −3 −10 −30 −100 Collector to base voltage VCB (V) − 0.01 − 0.1 − 0.3 −1 −3 −10 −30 Output current IO (mA) SJH00008BED VCE = −10 V 200 Ta = 75°C 160 25°C 120 −25°C 80 40 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) −30 20 Input voltage VIN (V) Collector output capacitance Cob (pF) −100 −300 −1 000 VIN IO f = 1 MHz IE = 0 Ta = 25°C 0 −1 6 −30 Collector current IC (mA) Cob VCB 24 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C −100 Collector to emitter saturation voltage VCE(sat) (V) −240 −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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