DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications ► ► ► ► ► ► ► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Ordering Information BVDSX/ BVDGX RDS(ON) (max) IDSS (min) 350V 10Ω 200mA Package Options TO-243AA1 DN3535N8 DN3535N8-G -G indicates package is RoHS compliant (‘Green’) 1 Same as SOT-89. Products shipped on 2000 piece carrier tape reels. Package Option Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. D G D TO-243AA (top view) S DN3535 Thermal Characteristics Package ID (continuous)1 ID (pulsed) Power Dissipation @TA = 25OC Θjc (OC/W) Θja (OC/W) IDR1 IDRM TO-243AA 230mA 500mA 1.6W2 15 782 230mA 500mA Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics Symbol Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 350 - - V VGS = -5.0V, ID = 1.0µA VGS(OFF) Gate-to-source OFF voltage -1.5 - -3.5 V VDS = 15V, ID = 10µA Change in VGS(OFF) with temperature - - 4.5 mV/OC VDS = 15V, ID = 10µA Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V - - 1.0 µA VDS = Max rating, VGS = -5.0V - - 1.0 mA VDS = 0.8 Max Rating, VGS = -5.0V, TA = 125OC VGS = 0V, VDS = 15V ΔVGS(OFF) IGSS ID(OFF) Drain-to-source leakage current IDSS Saturated drain-to-source current RDS(ON) ΔRDS(ON) Conditions 200 - - mA Static drain-to-source ON-state resistance - - 10 Ω VGS = 0V, ID = 150mA Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA 200 - - mmho VDS = 10V, ID = 100mA pF VGS = -5.0V, VDS = 25V, f = 1MHz ns VDD = 25V, ID = 150mA, RGEN = 25Ω, VGS = 0V to -10V GFS Forward transconductance CISS Input capacitance - - 360 COSS Common source output capacitance - - 40 CRSS Reverse transfer capacitance - - 10 td(ON) Turn-ON delay time - - 15 Rise time - - 20 Turn-OFF delay time - - 20 Fall time - - 30 Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 150mA Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 150mA tr td(OFF) tf VSD trr Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 0V 90% INPUT -10V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RGEN D.U.T. 10% OUTPUT 90% OUTPUT tF INPUT 0V RL 90% 2 DN3535 Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 1.0 VGS = +2.0V 0V 0V -0.5V 0.8 I D ( A m pe r es ) 0.8 ID (Amperes) VGS = +2V -0.5V -0.8V 0.6 -1.0V 0.4 -0.8V 0.6 -1V 0.4 -1.5V -1.5V 0.2 0.2 -2V -2V 0.0 0.0 0 50 100 150 200 250 300 0 350 2 4 VDS (Volts) 6 8 10 VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2.0 1.0 VDS = 10V 1.5 PD (Watts) GFS (siemens) TO-243AA TA = -55°C 0.8 0.6 TA = 25°C 1.0 0.4 TA = 125°C 0.5 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0 0.8 25 50 ID (Amperes) 100 125 150 TC (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 75 TO-243AA (DC) 0.1 0.01 T A =25°C TO-243AA P D = 1.6W T C = 25°C 0.8 0.6 0.4 0.2 0 0.001 1 10 100 0.001 1000 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 DN3535 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSV Variation with Temperature 25 1.2 ID = 1mA 20 RDS(ON) (ohms) BVDSV (Normalized) VGS = -5V 1.1 1.0 VGS = 0V 15 10 0.9 5 0 50 100 0 0.0 150 0.2 0.4 TJ (°C) 0.8 1.0 ID (Amperes) VGS(OFF) and RDS(ON) w/ Temperature Transfer Characteristics 1300 VDS = 10V VGS(OFF) (normalized) TA = -55°C 1100 ID (Milliamperes) 0.6 900 TA = 25°C 700 TA = 125°C 500 300 1.4 2.4 1.2 2.0 VGS(OFF) @ 10µA 1.0 1.6 0.8 1.2 RDS(on) @ 0V, 150mA 0.6 0.8 100 0.4 -50 0 -3 -2 -1 0 1 2 -25 0 25 50 75 0.4 100 125 150 VGS (Volts) TJ (°C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 350 3 VGS = -5V 1 250 VGS (volts) C (picofarads) ID = 150mA 2 300 200 150 CISS 100 VDS =40V 0 -1 -2 -3 50 0 0 -4 COSS CRSS -5 10 20 30 0 40 500 1000 1500 QG (picocoulombs) VDS (volts) 4 2000 RDS(ON) (normalized) 0.8 -50 DN3535 3-Lead TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 ± 0.10 1.72 ± 0.10 1.50 ± 0.10 0.40 ± 0.05 Exclusion Zone No Vias/Traces in this area. Shape of pad may vary. 4.10 ± 0.15 2.21 ± 0.08 2.45 ± 0.15 1.05 ± 0.15 0.5 ± 0.06 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3535 A012307 5