SUPERTEX TN0620

TN0620
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
†
BVDSS /
BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
200V
6.0Ω
1.0A
1.6V
Order Number / Package
TO-92
TO-220
TN0620N3
TN0620N5
MIL visual screening available
7
Low Threshold DMOS Technology
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Features
■ Low threshold — 1.6V max.
■ High input impedance
■ Low input capacitance — 110pF typical
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
■ Fast switching speeds
■ Low on resistance
■ Free from secondary breakdown
■ Low input and output leakage
■ Complementary N- and P-channel devices
Package Options
Applications
■ Logic level interfaces – ideal for TTL and CMOS
■ Solid state relays
■ Battery operated systems
■ Photo voltaic drives
■ Analog switches
■ General purpose line drivers
■ Telecom switches
Absolute Maximum Ratings
G
SGD
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
TO-92
TO-220
TAB: DRAIN
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-55
D S
TN0620
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
θjc
Power Dissipation
@ TC = 25°C
°C/W
°C/W
θja
IDR*
IDRM
TO-92
0.4A
2.0A
1W
125
170
0.4A
2.0A
TO-220
1.5A
2.5A
45W
2.7
70
1.5A
2.5A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
200
VGS(th)
Gate Threshold Voltage
0.6
∆VGS(th)
Typ
Max
Unit
Conditions
V
VGS = 0V, ID = 2.0mA
1.6
V
VGS = VDS, ID = 1.0mA
Change in VGS(th) with Temperature
-5.0
mV/°C
VGS = VDS, ID = 1.0mA
IGSS
Gate Body Leakage
100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
10
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ON-State Drain Current
ID(ON)
0.5
1.0
∆RDS(ON)
Change in RDS(ON) with Temperature
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
6.0
8.0
4.0
6.0
1.4
300
VGS = 10V, ID = 0.5A
%/°C
VGS = 10V, ID = 0.5A
VDS = 25V, ID = 0.5A
m
150
Common Source Output Capacitance
40
85
CRSS
Reverse Transfer Capacitance
10
35
td(ON)
Turn-ON Delay Time
tr
Rise Time
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
20
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
VGS = 5V, ID = 0.25A
Ω
400
110
VGS = 10V, VDS = 25V
Ω
Static Drain-to-Source
ON-State Resistance
RDS(ON)
VGS = 5V, VDS = 25V
A
pF
VGS = 0V, VDS = 25V
f = 1 MHz
ns
VDD = 25V
ID = 1.0A
RGEN = 25Ω
10
8
300
V
VGS = 0V, ISD = 1.0A
ns
VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
INPUT
0V
PULSE
GENERATOR
10%
t(ON)
OUTPUT
t(OFF)
D.U.T.
tr
td(ON)
VDD
td(OFF)
tF
50Ω
10%
INPUT
10%
OUTPUT
0V
90%
90%
7-56
TN0620
Typical Performance Curves
Output Characteristics
Saturation Characteristics
4.0
4.0
3.2
3.2
VGS =
VGS =
2.4
ID (amperes)
ID (amperes)
10V
8V
6V
1.6
4V
0.8
2V
0
10
20
30
40
10V
8V
6V
1.6
4V
0.8
3V
0
2.4
3V
2V
0
50
0
2
4
VDS (volts)
8
10
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
50
1.0
VDS = 25V
TO-220
40
0.8
TA = -55°C
0.6
PD (watts)
GFS (siemens)
6
VDS (volts)
TA = 25°C
0.4
TA = 150°C
30
20
0.2
10
0
0
TO-39
TO-92
0
0.5
1.0
1.5
2.0
0
2.5
25
50
100
125
150
Thermal Response Characteristics
Maximum Rated Safe Operating Area
10
Thermal Resistance (normalized)
1.0
TO-220 (DC)
ID (amperes)
75
TC (° C)
ID (amperes)
1.0
TO-92 (DC)
0.1
0.8
TO-220
PD = 45W
TC = 25°C
0.6
0.4
0.2
TO-92
PD = 1W
TC = 25°C
TC = 25°C
0.01
1
10
100
0
0.001
1000
VDS (volts)
0.01
0.1
tp (seconds)
7-57
1
10
7
TN0620
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
15
1.1
V GS = 5V
RDS(ON) (ohms)
BVDSS (normalized)
12
1.0
VGS = 10V
9
6
3
0.9
0
-50
0
50
100
150
0
0.8
1.6
Tj (° C)
2.4
3.2
4.0
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.0
4.0
1.4
VDS = 25V
VGS(th) (normalized)
ID (amperes)
TA = -55°C
2.4
TA = 25°C
1.6
V (th)@ 1mA
1.2
1.2
RDS @ 10V, 0.5A
1.0
0.8
0.8
0.4
0.8
TA = 150°C
0.6
0
0
2
4
6
8
-50
10
0
50
100
0
150
Tj (° C)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
200
f = 1MHz
VDS = 10V
8
VGS (volts)
C (picofarads)
150
CISS
100
VDS = 40V
6
178 pF
4
COSS
50
2
100 pF
CRSS
0
0
0
10
20
30
0
40
0.5
1.0
1.5
QG (nanocoulombs)
VDS (volts)
7-58
2.0
2.5
RDS(ON) (normalized)
1.6
3.2