SUPERTEX TN0610N3

TN0606
TN0610
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON)
BVDGS (max)
†
ID(ON)
(min)
VGS(th)
(max)
Order Number / Package
TO-92
TO-220
60V
1.5Ω
3.0A
2.0V
TN0606N3
TN0606N5
100V
1.5Ω
3.0A
2.0V
TN0610N3
—
7
MIL visual screening available
Features
Low Threshold DMOS Technology
■ Low threshold — 2.0V max.
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
■ High input impedance
■ Low input capacitance — 100pF typical
■ Fast switching speeds
■ Low on resistance
■ Free from secondary breakdown
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
■ Low input and output leakage
■ Complementary N- and P-channel devices
Applications
Package Options
■ Logic level interfaces – ideal for TTL and CMOS
■ Solid state relays
■ Battery operated systems
■ Photo voltaic drives
■ Analog switches
■ General purpose line drivers
■ Telecom switches
G
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
D S
TO-220
TAB: DRAIN
SGD
TO-92
-55°C to +150°C
Note:
1. See Package Outline section for dimensions
300°C
* Distance of 1.6 mm from case for 10 seconds.
7-51
TN0606/TN0610
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
θjc
Power Dissipation
@ TC = 25°C
°C/W
°C/W
θja
IDR*
IDRM
TO-92
0.8A
3.2A
1W
125
170
0.8A
3.2A
TO-220
3.0A
4.1A
45W
2.7
70
3.0A
4.1A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Min
Drain-to-Source
Breakdown Voltage
TN0610
100
TN0606
60
Typ
Max
Unit
Conditions
V
VGS = 0V, ID = 1mA
2.0
V
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS(th)
Gate Threshold Voltage
∆V GS(th)
Change in VGS(th) with Temperature
-4.5
mV/°C
IGSS
Gate Body Leakage
100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
10
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C (note 2)
ID(ON)
0.6
ON-State Drain Current
1.2
2.0
3.0
6.7
A
VGS = 10V, VDS = 25V
15
Static Drain-to-Source
ON-State Resistance
∆RDS(ON)
Change in RDS(ON) with Temperature
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
1.5
2.0
1.0
1.5
0.75
0.4
0.5
100
150
Common Source Output Capacitance
50
85
CRSS
Reverse Transfer Capacitance
10
35
td(ON)
Turn-ON Delay Time
tr
Rise Time
14
td(OFF)
Turn-OFF Delay Time
16
tf
Fall Time
16
VSD
Diode Forward Voltage Drop
0.8
trr
Reverse Recovery Time
300
VGS = 3V, ID = 0.25A
Ω
VGS = 5V, ID = 0.75A
VGS = 10V, ID = 0.75A
%/°C
VGS = 10V, ID = 0.75A
Ω
RDS(ON)
VGS = 5V, VDS = 25V
VDS = 25V, ID = 1.0A
pF
VGS = 0V, VDS = 25V
f = 1 MHz
ns
VDD = 25V
ID = 1.5A
RGEN = 25Ω
V
VGS = 0V, ISD = 1.5A
ns
VGS = 0V, ISD = 1.5A
6
1.8
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
0V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
7-52
TN0606/TN0610
Typical Performance Curves
Output Characteristics
Saturation Characteristics
10
10
8
8
10V
6
ID (amperes)
ID (amperes)
VGS =
9V
8V
4
7V
6V
10V
9V
8V
4
7V
6V
5V
2
VGS =
6
5V
4V
3V
2
3V
0
0
0
10
20
30
40
1
50
4
6
8
10
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
1.0
50
TO-220
VDS = 25V
0.8
40
0.6
PD (watts)
GFS (siemens)
2
VDS (volts)
TA = -55°C
TA = 25°C
0.4
TA = 150°C
30
20
0.2
10
0
0
TO-92
1
2
4
6
8
10
0
25
50
Maximum Rated Safe Operating Area
125
100
150
Thermal Response Characteristics
1.0
Thermal Resistance (normalized)
10
TO-220 (DC)
ID (amperes)
75
TC (° C)
ID (amperes)
1.0
0.1
TO-92 (DC)
TC = 25°C
0.01
1
10
100
0.8
0.6
0.4
0.2
0
0.001
1000
VDS (volts)
TO-220
PD = 45W
TC = 25°C
TO-92
P D = 1W
T C = 25°C
0.01
0.1
tp (seconds)
7-53
1
10
7
TN0606/TN0610
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5
1.1
V GS = 5V
RDS(ON) (ohms)
BVDSS (normalized)
4
1.0
3
VGS = 10V
2
1
0.9
0
-50
0
50
100
150
0
2
4
Tj (° C)
6
8
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.0
10
1.4
TA = -55 ° C
VDS = 25V
VGS(th) (normalized)
25 ° C
6
4
V (th)@ 1mA
1.2
1.2
RDS @ 10V, 0.75A
1.0
0.8
0.8
150 ° C
2
0.4
0.6
0
0
2
4
6
8
-50
10
0
50
100
0
150
Tj (° C)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
200
f = 1MHz
VDS = 10V
8
VGS (volts)
C (picofarads)
150
CISS
100
VDS = 40V
6
172 pF
4
COSS
50
2
CRSS
0
10
20
30
95 pF
0
0
0
40
0.5
1.0
1.5
QG (nanocoulombs)
VDS (volts)
7-54
2.0
2.5
RDS(ON) (normalized)
1.6
8
ID (amperes)
10
ID (amperes)