CY7C1041DV33 4-Mbit (256 K × 16) Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description ■ Temperature ranges ❐ Industrial: –40 °C to 85 °C [1] ❐ Automotive-A : –40 °C to 85 °C [1] ❐ Automotive-E : –40 °C to 125 °C The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take chip enable (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 to I/O7) is written into the location specified on the address pins (A0 to A17). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 to I/O15) is written into the location specified on the address pins (A0 to A17). ■ Pin and function compatible with CY7C1041CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns (industrial) ■ Low CMOS standby power ❐ ISB2 = 10 mA ■ 2.0 V data retention ■ Automatic power-down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE and OE features ■ Available in Pb-free 48-ball VFBGA, 44-pin (400-mil) molded SOJ, and 44-pin TSOP II Packages To read from the device, take chip enable (CE) and output enable (OE) LOW while forcing the write enable (WE) HIGH. If BLE is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If BHE is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 10 for a complete description of read and write modes. The input and output pins (I/O0 to I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). The CY7C1041DV33 is available in a standard 44-pin 400-mil wide SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout and a 48-ball fine-pitch ball grid array (FBGA) package. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Logic Block Diagram 256K × 16 SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER INPUT BUFFER IO0–IO7 IO8–IO15 A9 A10 A 11 A 12 A 13 A14 A15 A16 A17 COLUMN DECODER BHE WE CE OE BLE Note 1. Automotive product information is preliminary. Cypress Semiconductor Corporation Document Number: 38-05473 Rev. *I • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised January 24, 2011 [+] Feedback CY7C1041DV33 Contents Selection Guide ................................................................ 3 Pin Configuration ............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 DC Electrical Characteristics .......................................... 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 AC Switching Characteristics ......................................... 6 Data Retention Characteristics ....................................... 7 Data Retention Waveform ................................................ 7 Switching Waveforms ...................................................... 7 Truth Table ...................................................................... 10 Document Number: 38-05473 Rev. *I Ordering Information ...................................................... 11 Ordering Code Definitions ......................................... 11 Package Diagrams .......................................................... 12 Acronyms ........................................................................ 15 Document Conventions ................................................. 15 Units of Measure ....................................................... 15 Document History Page ................................................. 16 Sales, Solutions, and Legal Information ...................... 17 Worldwide Sales and Design Support ....................... 17 Products .................................................................... 17 PSoC Solutions ......................................................... 17 Page 2 of 17 [+] Feedback CY7C1041DV33 Selection Guide Description Maximum access time Maximum operating current –10 (Industrial) 10 90 Maximum CMOS standby current –10 (Automotive-A) [2] 10 –12 (Automotive-E) [2] 12 Unit ns 90 10 95 15 mA mA 10 Pin Configuration Figure 1. 48-ball VFBGA (Pinout 1) [3, 4] 1 2 3 4 5 6 BLE OE A0 A1 A2 NC IO 0 BHE A3 A4 CE IO 1 IO2 A5 A6 IO10 VSS IO3 A17 VCC IO4 IO 6 Figure 2. 48-ball VFBGA (Pinout 2) [3, 4] 1 2 3 4 5 6 A BLE OE A0 A1 A2 NC A IO 8 B IO 8 BHE A3 A4 CE IO 0 B IO 9 C IO 9 IO10 A5 A6 IO 1 IO 2 C A7 IO11 VCC D VSS IO11 A17 A7 IO3 VCC D NC A16 IO12 VSS E VCC IO 12 NC A16 IO 4 VSS E IO 5 A14 A15 IO13 IO14 F IO 14 IO 13 A14 A15 IO 5 IO 6 F IO 7 NC A12 A13 WE IO15 G IO 15 NC A12 A13 WE IO 7 G NC A8 A9 A10 A11 NC H NC A8 A9 A10 A11 NC H Figure 3. 44-pin SOJ/TSOP II A0 A1 A2 A3 A4 CE IO0 IO1 IO2 IO3 VCC VSS IO4 IO5 IO6 IO7 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE BHE BLE IO15 IO14 IO13 IO12 VSS VCC IO11 IO10 IO9 IO8 NC A14 A13 A12 A11 A10 Notes 2. Automotive product information is preliminary. 3. NC pins are not connected on the die. 4. Pinout 1 is compliant with CY7C1041CV33 and pinout 2 is JEDEC compliant. The difference between the two is that the higher and lower byte I/Os (I/O[7:0] and I/O[15:8] balls) are swapped. Document Number: 38-05473 Rev. *I Page 3 of 17 [+] Feedback CY7C1041DV33 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ........................................... –55 °C to +125 °C Static discharge voltage............ ...............................> 2001 V (MIL-STD-883, method 3015) Latch-up current ..................................................... > 200 mA Operating Range Supply voltage on VCC relative to GND [5] ....–0.3 V to +4.6 V DC voltage applied to outputs in high Z State[5] ................................... –0.3 V to VCC +0.3 V Ambient Temperature Range VCC Speed DC input voltage[5] ................................ –0.3 V to VCC +0.3 V Industrial –40 °C to +85 °C 3.3 V ± 0.3 V 10 ns Automotive-A [1] –40 °C to +85 °C 3.3 V ± 0.3 V 10 ns Current into outputs (LOW) ......................................... 20 mA Automotive-E [1] –40 °C to +125 °C 3.3 V ± 0.3 V 12 ns DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions –10 (Industrial) Min VOH Output HIGH voltage VCC = Min, IOH = –4.0 mA VOL Output LOW voltage 2.4 – 2.4 – 2.4 – V – 0.4 – 0.4 – 0.4 V [5] Input HIGH voltage 2.0 VCC + 0.3 2.0 VCC + 0.3 2.0 VCC + 0.3 V [5] Input LOW voltage –0.3 0.8 –0.3 0.8 –0.3 0.8 V VIH VIL VCC = Min, IOL = 8.0 mA Max –10 –12 (Automotive-A) [6] (Automotive-E) [6] Unit Min Max Min Max IIX Input leakage current GND < VI < VCC –1 +1 –1 +1 –1 +1 μA IOZ Output leakage current GND < VOUT < VCC, output disabled –1 +1 –1 +1 –1 +1 μA ICC VCC operating supply current VCC = Max, f = fMAX = 1/tRC 100 MHz – 90 – 90 – – mA 83 MHz – 80 – 80 – 95 mA 66 MHz – 70 – 70 – 85 mA 40 MHz – 60 – 60 – 75 mA ISB1 Automatic CE power-down current —TTL inputs Max VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX – 20 – 20 – 15 mA ISB2 Automatic CE power-down current —CMOS inputs Max VCC, CE > VCC – 0.3 V, VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0 – 10 – 10 – 15 mA Notes 5. Minimum voltage is –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns. 6. Automotive product information is preliminary. Document Number: 38-05473 Rev. *I Page 4 of 17 [+] Feedback CY7C1041DV33 Capacitance[7] Parameter Description CIN Input capacitance COUT I/O capacitance Test Conditions Max Unit 8 pF 8 pF TA = 25 °C, f = 1 MHz, VCC = 3.3 V Thermal Resistance[7] Parameter Description ΘJA Thermal resistance (junction to ambient) ΘJC Thermal resistance (junction to case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four layer printed circuit board FBGA Package SOJ Package TSOP II Package Unit 27.89 57.91 50.66 °C/W 14.74 36.73 17.17 °C/W AC Test Loads and Waveforms The AC test loads and waveform diagram follows.[8] 10 ns device Z = 50 Ω 50 Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT ALL INPUT PULSES 3.0V OUTPUT 30 pF* GND 90% 90% 10% 10% 1.5V Rise Time: 1 V/ns (b) Fall Time: 1 V/ns (a) High-Z Characteristics R 317Ω 3.3V OUTPUT R2 351Ω 5 pF (c) Notes 7. Tested initially and after any design or process changes that may affect these parameters. 8. AC characteristics (except high Z) are tested using the load conditions shown in AC Test Loads and Waveforms (a). High Z characteristics are tested for all speeds using the test load shown in (c). Document Number: 38-05473 Rev. *I Page 5 of 17 [+] Feedback CY7C1041DV33 AC Switching Characteristics Over the Operating Range[9] Parameter Description –10 (Industrial) –10 (Automotive-A) [10] –12 (Automotive-E) [10] Min Max Min Max Min Max Unit Read Cycle tpower[11] VCC(Typical) to the first access 100 – 100 – 100 – μs tRC Read cycle time 10 – 10 – 12 – ns tAA Address to data valid – 10 – 10 – 12 ns tOHA Data hold from address change 3 – 3 – 3 – ns tACE CE LOW to data valid – 10 – 10 – 12 ns tDOE OE LOW to data valid – 5 – 5 – 7 ns tLZOE OE LOW to low Z 0 – 0 – 0 – ns – 5 – 5 – 6 ns 3 – 3 – 3 – ns – 5 – 5 – 6 ns Z[12, 13] tHZOE OE HIGH to high tLZCE CE LOW to low Z[13] Z[12, 13] tHZCE CE HIGH to high tPU CE LOW to power-up 0 – 0 – 0 – ns tPD CE HIGH to power-down – 10 – 10 – 12 ns tDBE Byte enable to data valid – 5 – 5 – 7 ns tLZBE Byte enable to low Z 0 – 0 – 0 – ns Byte disable to high Z – 6 – 6 – 6 ns tHZBE Write Cycle [14, 15] tWC Write cycle time 10 – 10 – 12 – ns tSCE CE LOW to write end 7 – 7 – 8 – ns tAW Address setup to write end 7 – 7 – 8 – ns tHA Address hold from write end 0 – 0 – 0 – ns tSA Address setup to write start 0 – 0 – 0 – ns tPWE WE pulse width 7 – 7 – 8 – ns tSD Data setup to write end 5 – 5 – 6 – ns tHD Data hold from write end 0 – 0 – 0 – ns tLZWE WE HIGH to low Z[13] 3 – 3 – 3 – ns – 5 – 5 – 6 ns 7 – 7 – 8 – ns Z[12, 13] tHZWE WE LOW to high tBW Byte enable to end of write Notes 9. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 10. Automotive product information is preliminary. 11. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access is performed. 12. tHZOE, tHZCE, tHZBE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads and Waveforms. Transition is measured when the outputs enter a high impedance state. 13. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZBE is less than tLZBE, and tHZWE is less than tLZWE for any given device. 14. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write and the transition of either of these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write. 15. The minimum write cycle time for Write Cycle No. 4 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document Number: 38-05473 Rev. *I Page 6 of 17 [+] Feedback CY7C1041DV33 Data Retention Characteristics Over the Operating Range Parameter VDR VCC for data retention ICCDR Data retention current tCDR tR [18] Conditions[16] Description Max Unit 2.0 – V VCC = VDR = 2.0 V, CE > VCC – 0.3 V, Industrial VIN > VCC – 0.3 V or VIN < 0.3 V Auto-A [17] – 10 mA – 10 mA Auto-E [17] – 15 mA 0 – ns tRC – ns Chip deselect to data retention time [19] Min Operation recovery time Data Retention Waveform DATA RETENTION MODE 3.0 V VCC VDR > 2 V tCDR 3.0 V tR CE Switching Waveforms Figure 4. Read Cycle No. 1[20, 21] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Notes 16. No input may exceed VCC + 0.3 V. 17. Automotive product information is preliminary. 18. Tested initially and after any design or process changes that may affect these parameters. 19. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 μs or stable at VCC(min.) > 50 μs. 20. Device is continuously selected. OE, CE, BHE, and BLE = VIL. 21. WE is HIGH for read cycle. Document Number: 38-05473 Rev. *I Page 7 of 17 [+] Feedback CY7C1041DV33 Switching Waveforms (continued) Figure 5. Read Cycle No. 2 (OE Controlled)[22, 23] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT tHZBE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU 50% 50% IICC CC IISB SB Figure 6. Write Cycle No. 1 (CE Controlled)[24, 25] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATAI/O Notes 22. WE is HIGH for read cycle. 23. Address valid prior to or coincident with CE transition LOW. 24. Data I/O is high impedance if OE or BHE and BLE = VIH. 25. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: 38-05473 Rev. *I Page 8 of 17 [+] Feedback CY7C1041DV33 Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS tSA BHE, BLE tBW tAW tHA tPWE WE tSCE CE tSD tHD DATAI/O Figure 8. Write Cycle No. 3 (WE Controlled, OE HIGH During Write)[26, 27] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE BHE, BLE t SD DATA I/O NOTE 28 tHD DATAIN VALID t HZOE Notes 26. Data I/O is high impedance if OE or BHE and BLE = VIH. 27. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. 28. During this period the I/Os are in the output state and input signals should not be applied. Document Number: 38-05473 Rev. *I Page 9 of 17 [+] Feedback CY7C1041DV33 Switching Waveforms (continued) Figure 9. Write Cycle No. 4 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD NOTE 29 DATA I/O tLZWE Truth Table I/O0–I/O7 I/O8–I/O15 Mode Power CE H OE X WE X BLE X BHE X High Z High Z Power-down Standby (ISB) L L H L L Data out Data out Read all bits Active (ICC) L L H L H Data out High Z Read lower bits only Active (ICC) L L H H L High Z Data out Read upper bits only Active (ICC) L X L L L Data in Data in Write all bits Active (ICC) L X L L H Data in High Z Write lower bits only Active (ICC) L X L H L High Z Data in Write upper bits only Active (ICC) L H H X X High Z High Z Selected, outputs disabled Active (ICC) Note 29. During this period the I/Os are in the output state and input signals should not be applied. Document Number: 38-05473 Rev. *I Page 10 of 17 [+] Feedback CY7C1041DV33 Ordering Information Speed (ns) 10 Ordering Code CY7C1041DV33-10BVI 12 51-85150 Package Type 48-ball VFBGA CY7C1041DV33-10BVXI 48-ball VFBGA (Pb-free) Pinout - 1[4] CY7C1041DV33-10BVJXI 48-ball VFBGA (Pb-free) Pinout - 2[4] CY7C1041DV33-10VXI 10 Package Diagram 51-85082 Operating Range Industrial 44-pin (400-mil) Molded SOJ (Pb-free) CY7C1041DV33-10ZSXI 51-85087 44-pin TSOP II (Pb-free) CY7C1041DV33-10BVXA 51-85150 48-ball VFBGA (Pb-free) Pinout - 1[4] CY7C1041DV33-10ZSXA 51-85087 44-pin TSOP II (Pb-free) CY7C1041DV33-12BVXE 51-85150 48-ball VFBGA (Pb-free) Pinout - 1[4] Automotive-A [1] Automotive-E[1] 48-ball VFBGA (Pb-free) Pinout - 2[4] CY7C1041DV33-12BVJXE CY7C1041DV33-12VXE 51-85082 44-pin (400-mil) Molded SOJ (Pb-free) CY7C1041DV33-12ZSXE 51-85087 44-pin TSOP II (Pb-free) Please contact your local Cypress sales representative for availability of these parts Ordering Code Definitions CY 7 C 1 04 1 D V33 - xx xxx x Temperature Range: x = I or A or E I = Industrial A = Automotive-A E = Automotive-E Package Type: xxx = BV or BVX or BVJX or VX or ZSX BV = 48-ball VFBGA BVX = 48-ball VFBGA (Pb-free) Pinout - 1 BVJX = 48-ball VFBGA (Pb-free) Pinout - 2 VX = 44-pin (400-mil) Molded SOJ (Pb-free) ZSX = 44-pin TSOP II (Pb-free) Speed: xx = 10 ns / 12 ns V33 = Voltage range (3 V to 3.6 V) D = C9, 90 nm Technology 1 = Data width × 16-bits 04 = 4-Mbit density 1 = Fast Asynchronous SRAM family Technology Code: C = CMOS 7 = SRAM CY = Cypress Document Number: 38-05473 Rev. *I Page 11 of 17 [+] Feedback CY7C1041DV33 Package Diagrams Figure 1. 48-ball VFBGA (6 × 8 × 1 mm), 51-85150 51-85150 *F a Document Number: 38-05473 Rev. *I Page 12 of 17 [+] Feedback CY7C1041DV33 Package Diagrams (continued) Figure 2. 44-pin (400-mil) Molded SOJ, 51-85082 51-85082 *C Document Number: 38-05473 Rev. *I Page 13 of 17 [+] Feedback CY7C1041DV33 Package Diagrams (continued) Figure 3. 44-pin TSOP II, 51-85087 51-85087 *C Document Number: 38-05473 Rev. *I Page 14 of 17 [+] Feedback CY7C1041DV33 Acronyms Document Conventions Acronym Description CE chip enable CMOS Complementary metal oxide semiconductor I/O Input/output OE output enable SRAM Static random access memory SOJ Small Outline J-Lead TSOP Thin Small Outline Package VFBGA Very Fine-Pitch Ball Grid Array Document Number: 38-05473 Rev. *I Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes mA milli Amperes mV milli Volts mW milli Watts MHz Mega Hertz pF pico Farad °C degree Celcius W Watts Page 15 of 17 [+] Feedback CY7C1041DV33 Document History Page Document Title: CY7C1041DV33 4-Mbit (256 K × 16) Static RAM Document Number: 38-05473 Rev. ECN No. Orig. of Change Submission Date Description of Change ** 201560 SWI See ECN Advance Data sheet for C9 IPP *A 233729 RKF See ECN 1.AC, DC parameters are modified as per EROS(Spec # 01-2165) 2.Pb-free offering in the ‘Ordering information’ *B 351117 PCI See ECN Changed from Advance to Preliminary Removed 15 and 20 ns Speed bin Corrected DC voltage (min) value in maximum ratings section from - 0.5 to - 0.3V Redefined ICC values for Com’l and Ind’l temperature ranges ICC (Com’l): Changed from 100, 80 and 67 mA to 90, 80 and 75 mA for 8, 10 and 12ns speed bins respectively ICC (Ind’l): Changed from 80 and 67 mA to 90 and 85 mA for 10 and 12ns speed bins respectively Added Static Discharge Voltage and latch-up current spec Added VIH(max) spec in Note# 2 Changed Note# 4 on AC Test Loads Changed reference voltage level for measurement of Hi-Z parameters from ±500 mV to ±200 mV Added Data Retention Characteristics/Waveform and footnote # 11, 12 Added Write Cycle (WE Controlled, OE HIGH During Write) Timing Diagram Changed Package Diagram name from 44-Pin TSOP II Z44 to 44-Pin TSOP II ZS44 and from 44-Pin (400-mil) Molded SOJ V34 to 44-Pin (400-mil) Molded SOJ V44 Changed part names from Z to ZS in the Ordering Information Table Added 8 ns Product Information Added Pin-Free Ordering Information Shaded Ordering Information Table *C 446328 NXR See ECN Converted from Preliminary to Final Removed -8 speed bin Removed Commercial Operating Range product information Included Automotive Operating Range product information Updated Thermal Resistance table Updated footnote #8 on High-Z parameter measurement Updated the ordering information and replaced Package Name column with Package Diagram in the Ordering Information Table *D 480177 VKN See ECN Added -10BVI product ordering code in the Ordering Information table *E 2541850 VKN/PYRS 07/22/08 Added -10BVJXI part *F 2752971 VKN 08/18/2009 Added Automotive-A information For 12 ns speed, changed ISB1 spec from 25 mA to 15 mA For 12 ns speed, changed tDOE and tDBE specs from 6 ns to 7 ns Updated ordering information table *G 3034079 PRAS 09/20/2010 Added Ordering Code Definitions. Added Acronyms and Units of Measure. Minor edits *H 3082285 HRP 11/09/2010 Corrected typo in Note 20. *I 3149096 AJU 01/24/2011 No technical updates Document Number: 38-05473 Rev. *I Page 16 of 17 [+] Feedback CY7C1041DV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory cypress.com/go/memory Optical & Image Sensing cypress.com/go/image PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2011. 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Document Number: 38-05473 Rev. *I Revised January 24, 2011 Page 17 of 17 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback