AON7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7400 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7400 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 12.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H C TA=70°C B A V A 35 14 Junction and Storage Temperature Range 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. ±12 9 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D Units V 80 IDSM TA=25°C Power Dissipation Maximum 30 10 TC=25°C Power Dissipation S 16 TA=25°C Continuous Drain Current G G 20 ID IDM TC=100°C Pulsed Drain Current D D D D S S S G Pin 1 RθJA RθJC Typ 30 60 3 °C Max 40 75 3.5 Units °C/W °C/W °C/W www.aosmd.com AON7400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime 0.1 µA 1.55 2.5 V 10.5 12.5 A 14.7 VGS=4.5V, ID=10A 12.2 VDS=5V, ID=13.4A 40 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Coss VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A uA 5 VGS=10V, ID=10A 0.8 Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS IS Typ 14.5 mΩ mΩ S 1.0 V 5 A 1210 1452 pF 330 396 pF 85 119 pF 1.2 1.6 Ω 22 28 nC 10 13 nC 3.7 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 10 ns VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω 6.3 ns 21 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 47 2.8 ns 45 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev1: Nov 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 20 ID (A) ID(A) 4.5V 60 VDS=5V 25 6V 80 3V 125° 15 25°C 40 10 VGS=2.5V 20 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 20 Normalized On-Resistance 2 15 RDS(ON) (mΩ) 2 VGS=4.5V 10 VGS=10V 5 1.8 VGS=10V ID=10A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 0 5 10 15 20 25 0.6 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 125°C 25°C 13 9 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 1.0E+01 ID=10A 17 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=10A 6 Capacitance (pF) VGS (Volts) 8 4 2 1500 1000 Coss 500 Crss 0 0 5 10 15 20 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 DC TJ(Max)=150°C TA=25°C 0.1 15 20 25 30 TJ(Max)=150°C TA=25°C 100 Power (W) 1.0 10 120 1m 10ms 5 140 100µ RDS(ON) limited 0 VDS (Volts) Figure 8: Capacitance Characteristics 10µs 10.0 ID (Amps) Ciss 80 60 40 20 0.0 0.01 0.1 1 VDS (Volts) 10 100 ZθJA Normalized Transient Thermal Resistance 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note G) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com