TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS = −10 ìA (max) (VDS = −20 V) • Enhancement-model: Vth = −0.5 to −1.2 V(VDS =−10 V, ID = −200 ìA) • Low forward voltage: VFM = 0.46V(typ.) Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±8 V DC (Note 1) ID −2.7 Pulse (Note 1) IDP −10.8 EAS 1.2 mJ Avalanche current IAR −1.35 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Drain current Single pulse avalanche energy (Note 4) A 5. Drain 2. Anode 6. Drain 3.Source 7. Cathode 4. Gate 8. Cathode JEDEC JEITA TOSHIBA Weight: 0.011 g (typ.) SBD (Ta = 25°C) Characteristics 1. Anode Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Circuit Configuration 8 7 6 5 1 2 3 4 Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating PD (1) 1.35 PD (2) 1.12 PD (1) 0.53 PD (2) 0.33 Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2a) dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Unit Marking (Note 7) 8 5 W F8A 1 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page. 1 2003-04-08 TPCF8B01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Unit °C/W Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 °C/W This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (単位: mm) FR-4 25.4 × 25.4 × 0.8 (単位 t: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. o Note 6: Rectangular waveform (α =180 ), VR =15V. Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal No. 1. 2 2003-04-08 TPCF8B01 Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Gate leakage current Symbol Test Condition IGSS VGS = ±8 V, VDS = 0 V Min Typ. Max Unit ±10 µA µA IDSS VDS = −20 V, VGS = 0 V −10 V (BR) DSS ID = −10 mA, VGS = 0 V −20 V (BR) DSX ID = −10 mA, VGS = 8V −12 Vth VDS = −10 V, ID = −200 µA −0.5 −1.2 RDS (ON) VGS = −1.8 V, ID = −0.7 A 215 300 RDS (ON) VGS = −2.5 V, ID = −1.4A 110 160 RDS (ON) VGS = −4.5 V, ID = −1.4 A 72 110 Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.4 A 2.4 4.7 Input capacitance Ciss 470 Reverse transfer capacitance Crss 70 Output capacitance Coss 80 5 9 Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton −5 V Turn-off time 4.7 Ω Switching time Fall time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = −1.4 A VOUT 0V RL = 7.14 Ω Drain cut-off current VDD ∼ − −10 V 1%, t = 10 µs Duty < = w VDD ∼ − −16 V, VGS = −5 V, ID = −2.7 A V V mΩ S pF ns 8 26 6 4 2 nC MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP -10.8 A -1.2 V Min Typ. Max Unit VDSF IDR = −2.7 A, VGS = 0 V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol Test Condition VFM(1) IFM = 0.7 A 0.43 V VFM(2) IFM = 1.0 A 0.46 0.49 V VRRM = 20 V 50 µA VR = 10 V, f = 1 MHz 54 pF IRRM Cj 3 2003-04-08 TPCF8B01 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 4 2003-04-08