DIM600XSM45-F000
Single Switch IGBT Module
DS5874-1.1 August 2006
FEATURES
•
10µs Short Circuit Withstand
•
Soft Punch Through Silicon
•
Lead Free construction
•
Isolated MMC Base with AlN Substrates
•
High Thermal Cycling Capability
•
High isolation module
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
IC
(max)
I C(PK)
(max)
(LN24724)
4500V
2.9 V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
•
High Reliability Inverters
•
Motor Controllers
•
Traction Drives
•
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 3600A.
Fig. 1 Single switch circuit diagram
The DIM600XSM45-F000 is a single switch 4500V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
Outline type code: X
ORDERING INFORMATION
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Order As:
DIM600XSM45-F000
Note: When ordering, please use the complete part
number
Page 1 of 8Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM600XSM45-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbo
l
Parameter
Test Conditions
Units
4500
V
±20
V
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Continuous collector current
Tcase =95 ° C
600
A
IC(PK)
Peak collector current
1ms, Tcase=115 ° C
1200
A
Pmax
Max.transistor power
dissipation
Tcase =25 °C, T j =150 ° C
10.4
kW
2
2
VGE =0V
Max.
2
It
Diode I t value (Diode arm)
VR =0,tp =10ms,Tvj =125 °C
TBD
kA s
Visol
Isolation voltage-per module
Commoned terminals to base plate.
AC RMS,1 min,50Hz
7400
kV
QPD
Partial discharge-per module
IEC1287.V1 =4800V, V2 =3500V, 50Hz RMS
10
pC
Typ.
Max
Units
-
12
° C/kW
-
24
° C/kW
-
8
° C/kW
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Critical Tracking Index)
> 600
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
Parameter
Test Conditions
Thermal resistance -transistor (per
switch)
Thermal resistance -diode (per
switch)
Thermal resistance -case to heatsink
(per module)
Continuous dissipation junction to case
Continuous dissipation junction to case
Mounting torque 5Nm
(with mounting grease)
Junction temperature
Transistor
-
-
150
°C
Diode
-
-
125
°C
-40
-
125
°C
-
-
5
Nm
-
-
2
Nm
-
-
10
Nm
Storage temperature range
Screw torque
Mounting M6
Electrical connections M4
Electrical connections M8
2/7
Min
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbo
l
Parameter
Collector cut-off current
ICES
Test Conditions
Min
Typ
VGE =0V,VCE =VCES
VGE =0V,VCE =VCES ,Tcase =125 °C
Max
Units
1
mA
60
mA
8
uA
7.0
V
IGES
Gate leakage current
VGE = ± 20V,VCE =0V
VGE(TH)
Gate threshold voltage
IC =80mA,VGE =VCE
Collector-emitter saturation
voltage
VGE =15V,IC =600A
2.9
V
VGE =15V,IC =600A,TVJ =125 °C
3.5
V
VCE(sat)
†
5.5
6.5
IF
Diode forward current
DC
600
A
IFM
Diode maximum forward
current
tp =1ms
1200
A
VF
Diode forward voltage
IF =600A
3.0
V
IF =600A,TVJ =125 °C
3.1
V
Cies
Input capacitance
VCE =25V,VGE =0V,f =1MHz
130
nF
Cres
Reverse transfer capacitance
VCE =25V,VGE =0V,f =1MHz
1.8
nF
LM
Module inductance
--
15
nH
RINT
Internal transistor resistance
135
µΩ
2800
A
2500
A
SCData
Short circuit.I SC
Tj ≤125 °C,V CC ≤3000V,
I1
t p = 10 us,
VCE(max)=VCES – L*.di/dt
IEC 60747-9
I2
Note:
†
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3/7
DIM600XSM45-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =600A
5.0
us
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1500
mJ
td(on)
Turn-on delay time
RG(ON) =4.7Ω
RG(OFF)=11Ω
850
ns
tr
Rise time
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
1800
mJ
Qg
Gate charge
20
uC
IF =600A,VCE =2250V,
475
uC
dIF/dt =3000A/us
700
A
600
mJ
Qrr
Irr
Erec
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =600A
5.2
us
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1700
mJ
td(on)
Turn-on delay time
RG(ON) =4.7Ω
RG(OFF)=11Ω
800
ns
tr
Rise time
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
2700
mJ
IF =600A,VCE =2250V,
850
uC
dIF/dt =3000A/us
820
A
1050
mJ
Qrr
Irr
Erec
4/7
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
1200
1000
1000
800
Collector current, Ic - (A)
Collector current, Ic - (A)
1200
Common emitter
Tcase = 25° C
VCE is measured at power busbars
and not the auxiliary terminals
600
Vge=10V
Vge=12V
Vge=15V
Vge=20V
400
200
Common emitter
Tcase = 125° C
VCE is measured at power busbars
and not the auxiliary terminals
800
600
400
Vge=10V
Vge=12V
Vge=15V
Vge=20V
200
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
1.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
5.0
8000
3000
Conditions:
VCC = 2250V
Ic = 600A
Tcase = 125° C
Cge =110nF
Vge = +/- 15V
Eon (mJ)
Conditions:
VCC = 2250V
Tcase = 125° C
Rg = 4.7Ohms
Cge =110nF
Vge =+/- 15V
2000
7000
Eoff (mJ)
Erec (mJ)
Switching Energy - Esw (mJ)
Switching Energy - Esw (mJ)
2.0
Collector-emitter voltage, Vce - (V)
1000
6000
5000
Eon (mJ)
Eoff (mJ)
Erec (mJ)
4000
3000
2000
1000
0
0
200
400
600
Collector Current - Ic (A)
0
0
5
10
15
20
25
30
Gate Resistance - Rg (Ohms)
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5/7
DIM600XSM45-F000
1400
1200
25ºC
125ºC
1200
VF is measured at power busbars
and not the auxiliary terminals
1000
800
Collector current, Ic (A)
Forward Current If - ( A)
1000
600
400
Module
800
Chip
600
Tcase = 125'C
Vge = +/-15V
Rg(off) =11ohms
400
200
200
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4000
4.5
Forward voltage, Vf - (V)
4200
4400
4600
4800
5000
Collector emitter voltage, Vce (V)
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
100
Transient thermal impedance, Zth(j-c) - ('C/kW)
1000
900
Reverse recoery current, I rr-(A)
Tj = 125º C
800
700
600
500
400
Rth IGBT
Rth diode
10
300
1
0.001
200
0.01
0.1
1
10
Pulse time, tp - (s)
100
0
0
1000
2000
3000
4000
5000
Reverse voltage, VR -(V)
Fig. 9 Diode reverse bias safe operating area
6/7
IG B T
D io d e
R i ( °C /k W )
ti (m s )
R i ( °C /k W )
ti (m s )
1
0 .4 6
0 .1 7
0 .9 0
0 .1 7
2
2 .1 0
8 .0 8
4 .2 2
8 .0 8
3
3 .6 4
5 1 .9 2
7 .2 8
5 1 .9 2
4
5 .8 6
2 8 0 .5
1 1 .7 1
2 8 0 .5
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1100g
Module outline type code: X
Fig. 11 Outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7/7
DIM600XSM45-F000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Fax: +44(0)1522 500550
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Tel: +44(0)1522 500500
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification.
No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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