DIM100PHM33-A000 DIM100PHM33-A000 Half Bridge IGBT Module PDS5708-1.3 January 2004 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for applications requiring high thermal cycling capability. KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 100A 200A *(measured at the power busbars and not the auxiliary terminals) 1(E1/C2) 2(C1) 3(E2) 5(E1) 7(E2) 4(G1) 6(G2) 8(C1) Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM100PHM33-A000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/8 DIM100PHM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 85˚C 100 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 200 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1304 W Diode I2t value (Diode arm) VR = 0, tp = 10ms, Tvj = 125˚C 5 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC IC I2t THERMAL AND MECHANICAL RATINGS Internal insulation: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Critical Tracking Index): 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 96 ˚C/kW - - 192 ˚C/kW - - 16 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - 2/8 Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M5 - - 4 Nm Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM100PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 0.5 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 7.5 mA Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 100A - 3.4 - V VGE = 15V, IC = 100A, , Tcase = 125˚C - 4.4 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 100 - A IFM Diode maximum forward current tp = 1ms - 200 - A VF† Diode forward voltage IF = 100A - 2.5 - V IF = 100A, Tcase = 125˚C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 23 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 0.33 - nF LM Module inductance - per switch - - 30 - nH Internal transistor resistance - per switch - - 0.54 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 650 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 550 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/8 DIM100PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 100A - 1350 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 1800V - 75 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =20Ω - 550 - ns L ~ 100nH - 250 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 150 - mJ Qg Gate charge - 1.25 - µC Qrr Diode reverse recovery charge IF = 100A, VR = 1800V, - 40 - µC Irr Diode reverse current dIF/dt = 500A/µs - 70 - A - 55 - mJ Min. Typ. Max. Units IC = 100A - 1400 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 105 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 20Ω - 550 - ns L ~ 100nH - 250 - ns - 220 - mJ IF = 100A, VR = 1800V, - 75 - µC dIF/dt = 450A/µs - 75 - A - 100 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/8 Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM100PHM33-A000 TYPICAL CHARACTERISTICS 200 V Common emitter Tcase = 125˚C Vce is measured at power busbars is measured at power busbars ce 175 and not the auxiliary terminals 175 and not the auxiliary terminals 150 150 Collector current, IC - (A) Collector current, IC - (A) 200 Common emitter Tcase = 25˚C 125 100 75 125 100 50 50 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 25 0 0 75 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 25 0 1 2 3 4 5 0 6 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics 3 5 2 4 6 Collector-emitter voltage, Vce - (V) 7 8 Fig. 4 Typical output characteristics 350 250 Conditions: Tc = 125°C IC = 100A 300 Vcc = 1800V Cge = 66nF Switching energy, Esw - (mJ) Conditions: Tc = 125°C, 225 Rg = 20 Ohms, Vcc = 1800V, 200 Cge = 66nF 175 Switching energy, Esw - (mJ) 1 150 125 100 75 250 200 150 100 50 50 Eon (mJ) Eoff (mJ) Erec (mJ) 25 0 0 25 50 75 100 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 0 10 Eon (mJ) Eoff (mJ) Erec (mJ) 20 30 40 Gate resistance, Rg - (ohms) 60 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 50 5/8 DIM100PHM33-A000 200 Tj = 25˚C Tj = 125˚C 250 175 VF is measured at power busbars and not the auxiliary terminals 200 Collector current, IC - (A) Forward current, IF - (A) 150 125 100 75 150 100 Tcase = 125˚C 50 V = ±15V ge Rg(min) = 20 Ohms 50 Module IC Chip IC 25 0 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 500 4.0 1000 1500 2000 2500 3000 3500 Collector emitter voltage, Vce - (V) Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 1000 200 Transient thermal impedance, Zth (j-c) - (°C/kW ) Tj = 125˚C Reverse recovery current, Irr - (A) 175 150 125 100 75 50 25 0 0 Transistor 100 10 IGBT Diode 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 6/8 Diode 3500 1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 3.58 0.13 8.6 0.13 2 22.52 5.80 45.04 5.80 0.1 Pulse width, tp - (s) 3 31.54 48.03 63.06 48.03 1 4 38.22 248.53 76.46 248.53 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM100PHM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(E1/C2) 2(C1) 3(E2) 5(C2/E1) 7(E2) 4(G1) 6(G2) 8(C1) Nominal weight: 750g Module outline type code: P Fig. 11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/8 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com