DMN5L06DW NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-363 Very Low Gate Threshold Voltage Low Input Capacitance A Fast Switching Speed D2 G1 B C Ultra-Small Surface Mount Package S2 “Green” Device (Note 3) D1 G2 G H Mechanical Data K · · Case: SOT-363 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: Date Code and Type Code, See Page 2 M J D Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 S1 Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) Dim F L J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 D2 G1 S1 S2 G2 D1 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 1.0MW VDGR 50 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous ID 280 mA Drain Current (Note 1) Pulsed IDM 1.5 A Pd 200 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30751 Rev. 1 - 2 1 of 5 www.diodes.com DMN5L06DW ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 50 ¾ ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 0.1 500 µA VDS = 50V, VGS = 0V IGSS ¾ ¾ ±20 nA VGS = ±20V, VDS = 0V VGS(th) 0.49 ¾ 1.2 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ 1.6 2.2 3 4 W VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA ID(ON) 0.5 1.0 ¾ A OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance |Yfs| 200 ¾ ¾ mS Source-Drain Diode Forward Voltage VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS 1.5 VDS = 25V, VGS = 0V f = 1.0MHz 1 VGS = 10V 8V 6V 5V 4V 3V 1.2 VDS = 10V Pulsed 8V 10V 6V 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 4V 0.9 3V 0.6 0.1 TA = 150° C TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C 0.3 TA = -25° C TA = -55° C 0.001 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS30751 Rev. 1 - 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com DMN5L06DW 10 VDS = 10V VGS(th), GATE THRESHOLD VOLTAGE (V) VGS = 10V Pulsed ID = 1mA 0.7 Pulsed TA = 85° C TA = 125° C 0.6 TA = 150° C 0.5 0.4 1 0.3 TA = -55° C TA = 25° C 0.2 TA = 0° C TA = -25° C 0.1 0 -75 -50 -25 25 0 50 75 0.1 0.001 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 10 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 8 VGS = 5V Pulsed TA = 25° C Pulsed 7 TA = 85° C TA = 125° C 6 TA = 150° C 5 1 4 TA = -55° C TA = 25° C TA = 0° C 3 TA = -25° C 2 ID = 280mA 1 0.1 ID = 140mA 0 1 0.1 0.01 0.001 5 0 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 10 15 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2.5 1 VGS = 10V Pulsed 2.3 VGS = 0V Pulsed 2.1 1.9 ID = 280mA 1.7 ID = 140mA 1.5 1.3 1.1 0.9 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 0.8 TA = 150° C 0.1 TA = 125° C TA = 85° C 0.01 TA = 25° C TA = -25° C 0.7 TA = -55° C 0.5 -50 -25 0 25 50 75 100 0.001 125 150 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30751 Rev. 1 - 2 3 of 5 www.diodes.com 0 1 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DMN5L06DW |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 1 VGS = 10V 0.1 VGS = 0V 0.01 TA = 25°C Pulsed 0.001 0.5 0 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 TA = -55° C VDS = 10V Pulsed TA = -25° C TA = 0° C 0.1 TA = 25° C TA = 85° C TA = 125° C TA = 150° C 0.01 0.001 0.01 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current P, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 11 Derating Curve - Total DS30751 Rev. 1 - 2 4 of 5 www.diodes.com DMN5L06DW NEW PRODUCT Ordering Information Notes: (Note 5) Device Packaging Shipping DMN5L06DW-7 SOT-363 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 6) G1 D2 S1 K5L YM S2 Notes: G2 D1 K5L = DMN5L06DW Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30751 Rev. 1 - 2 5 of 5 DMN5L06DW