FAIRCHILD FDP150N10

FDP150N10
tm
®
N-Channel PowerTrench MOSFET
100V, 57A, 15mΩ
Features
General Description
• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
Application
• RoHS compliant
• DC to DC convertors / Synchronous Rectification
D
G
G DS
TO-220
FDP Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
A
A
- Pulsed
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
(Note 1)
228
A
(Note 2)
132
mJ
7.5
V/ns
(Note 3)
(TC = 25oC)
110
W
- Derate above 25oC
0.88
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
V
40
-Continuous (TC = 100oC)
Drain Current
±20
57
Drain Current
IDM
Units
V
-Continuous (TC = 25oC)
ID
EAS
Ratings
100
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
1.13
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP150N10 N-Channel PowerTrench® MOSFET
July 2008
Device Marking
FDP150N10
Device
FDP150N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
100
-
-
V
-
0.1
-
V/oC
µA
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250µA, VGS = 0V, TC= 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
-
-
1
VDS = 100V, VGS = 0V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
-
4.5
V
-
12
15
mΩ
-
156
-
S
o
ID = 250µA, Referenced to 25 C
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 49A
gFS
Forward Transconductance
VDS = 20V, ID = 49A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
3580
4760
pF
-
340
450
pF
-
140
210
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50V, ID = 49A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
VDS = 80V, ID = 49A
VGS = 10V
(Note 4, 5)
-
47
104
ns
-
164
338
ns
-
86
182
ns
-
83
176
ns
-
53
69
nC
-
19
-
nC
-
15
-
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
57
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
228
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 49A
-
-
1.3
V
trr
Reverse Recovery Time
-
41
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 49A
dIF/dt = 100A/µs
-
70
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 49A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP150N10 Rev. A
2
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FDP150N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
100
1000
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
ID,Drain Current[A]
ID,Drain Current[A]
500
Figure 2. Transfer Characteristics
10
100
o
150 C
o
25 C
10
*Notes:
1. 250µs Pulse Test
o
-55 C
o
2. TC = 25 C
2
0.1
1
VDS,Drain-Source Voltage[V]
0.02
10
1
3
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
500
25
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
20
VGS = 10V
15
VGS = 20V
10
o
*Note: TC = 25 C
o
150 C
100
0
100
200
ID, Drain Current [A]
10
*Notes:
1. VGS = 0V
1
0.2
300
Figure 5. Capacitance Characteristics
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
5000
10
4000
*Note:
1. VGS = 0V
2. f = 1MHz
VGS, Gate-Source Voltage [V]
Ciss
3000
Coss
2000
1000
o
25 C
2. 250µs Pulse Test
5
Capacitances [pF]
4
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
VDS = 25V
VDS = 50V
VDS = 80V
8
6
4
2
*Note: ID = 49A
0
0.1
FDP150N10 Rev. A
1
10
VDS, Drain-Source Voltage [V]
0
30
0
3
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
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FDP150N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
*Notes:
1. VGS = 0V
2. ID = 250uA
0.95
0.90
-100
1.6
1.2
*Notes:
1. VGS = 10V
2. ID = 49A
0.8
0.4
-100
-50
0
50
100 o 150
TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
500
70
10µs
100
60
100µs
1ms
10ms
DC
10
ID, Drain Current [A]
ID, Drain Current [A]
2.0
Operation in This Area
is Limited by R DS(on)
1
*Notes:
o
1. TC = 25 C
0.1
50
40
30
20
o
2. TJ = 150 C
3. Single Pulse
10
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
200
50
75
100 o 125
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
2
1
0.5
0.2
PDM
0.1
0.05
*Notes:
0.02
t2
o
1. ZθJC(t) = 1.13 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.01
-5
10
FDP150N10 Rev. A
t1
0.1
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDP150N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP150N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP150N10 Rev. A
5
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FDP150N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP150N10 Rev. A
6
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FDP150N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP150N10 Rev. A
7
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDP150N10 Rev. A
8
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FDP150N10 N-Channel PowerTrench® MOSFET
TRADEMARKS