MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm • High power gain Glp=13dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=200mA • Rg=500Ω Tape & Reel(1.5K) Delivery Absolute maximum ratings Symbol (Ta=25°C) Parameter Gate to sourcebreakdown voltage VGSO VGDO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings Unit -15 -15 800 -2.5 5.4 6.0 150 -40 to +150 V V mA mA mA W °C °C Recommended maximum ratings Symbol Tch Parameter (Ta=25°C) Ratings Unit 150 °C Cannel temperature Electrical characteristics Symbol (Ta=25°C) Parameter Test conditions VGS(off) gm Gate to source cut-off voltage VDS=3V,ID=2.5mA Transconductance VDS=3V,ID=300mA Po Output power VDS=10V,ID=200mA,f=2.15GHz *1 Power added Efficiency GLP *2 Linear Power Gain IM3 *3 3rd order Modulation Distortion ηadd Rth(ch-c) Thermal Resistance *1:Channel to case / *1 Limits Unit Min. -1 Typ. -3 Max. -5 V -- 200 -- mS 29.5 31 -- dBm *1:Pin=20dBm, *2:Pin=10dBm -- 50 -- % *3:f1=2.15GHz,f2=2.16GHz 11 13 -- dB -- -45 -- dBc -- 20 25 °C/W Po(SCL)=20dBm ∆Vf Method Above parameters, ratings, limits are subject to change. (1/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS Po,Gp,PAE vs. Pin 70 35 Po Vds=10V Ids(RFoff)=200mA f=2.15GHz 60 50 25 PAE 20 40 30 15 PAE (%) Po (dBm) , Gp (dB) 30 Gp 10 20 5 10 0 0 0 5 10 15 20 25 Pin (dBm) Po vs. freq. 35 33 Vds=10V Ids(RFoff)=200mA Pin=20dBm 31 Pin=15dBm Po (dBm) 29 27 25 Pin=10dBm 23 21 19 Pin=5dBm 17 15 1.95 2.05 2.15 2.25 2.35 freq. (GHz) (2/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS IM3 vs.Po -20 Vds=10V Ids(RFoff)=200mA f1=2.15GHz f2=2.16GHz -25 -30 -35 IM3 (dBc) IM3 -40 -45 -50 -55 IM5 -60 -65 -70 15 20 25 30 Po (Total) (dBm) (3/42) Mitsubishi Electric Mar./2005 MGF0951P S PARAMETERS (Ta=25°C,VD=10V,ID=200mA) f (MHz) Magn. 0.847 0.827 0.807 0.797 0.785 0.777 0.772 0.763 0.754 0.745 0.733 0.720 0.709 0.698 0.689 0.678 0.669 0.660 0.651 0.641 0.630 0.619 0.608 0.599 0.589 0.577 0.563 0.549 0.533 0.518 0.505 0.497 0.501 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 6600 6800 7000 S11 Angle(deg.) -98.9 -115.4 -127.9 -137.6 -145.0 -151.3 -156.1 -160.3 -164.1 -167.7 -171.3 -175.0 -178.8 177.4 173.5 169.7 166.0 162.4 158.4 154.1 149.4 144.6 140.0 135.2 130.4 125.2 120.3 115.0 108.4 101.4 93.1 84.1 74.8 Magn. 7.176 5.972 5.076 4.392 3.867 3.450 3.127 2.865 2.655 2.485 2.342 2.223 2.114 2.023 1.939 1.867 1.807 1.756 1.715 1.677 1.640 1.604 1.572 1.543 1.512 1.486 1.466 1.453 1.440 1.427 1.417 1.403 1.386 S Parameter(TYP.) S21 S12 Angle(deg.) Magn. Angle(deg.) 117.6 0.039 44.1 106.5 0.043 37.8 97.3 0.046 34.1 89.6 0.048 31.5 82.8 0.051 29.6 76.6 0.052 29.0 71.0 0.053 28.2 65.7 0.056 28.0 60.8 0.058 27.2 55.8 0.060 27.4 50.9 0.064 26.7 46.1 0.067 25.9 41.4 0.070 25.4 36.7 0.073 24.8 31.8 0.076 23.9 27.2 0.080 22.8 22.6 0.084 22.0 18.1 0.089 21.6 13.4 0.095 20.2 8.5 0.101 18.6 3.6 0.108 16.8 -1.2 0.114 15.0 -6.1 0.122 12.9 -11.1 0.129 10.5 -16.2 0.137 7.9 -21.3 0.146 5.1 -26.4 0.156 2.2 -31.6 0.165 -0.9 -37.1 0.177 -4.6 -42.9 0.189 -8.3 -48.9 0.201 -12.7 -55.3 0.213 -17.2 -61.9 0.226 -22.5 SIDE TOP Magn. 0.186 0.207 0.225 0.240 0.256 0.270 0.284 0.295 0.303 0.314 0.325 0.335 0.342 0.346 0.350 0.351 0.351 0.346 0.340 0.334 0.332 0.328 0.323 0.318 0.316 0.316 0.314 0.307 0.300 0.293 0.286 0.269 0.245 S22 Angle(deg.) -115.6 -126.0 -133.2 -137.7 -140.5 -142.7 -143.5 -144.3 -144.8 -145.3 -145.4 -145.3 -145.4 -146.1 -147.5 -148.9 -149.5 -150.5 -152.0 -154.4 -156.5 -158.4 -160.6 -163.5 -167.3 -170.5 -172.9 -175.5 -178.9 177.0 173.4 169.2 162.5 K MSG/MAG (dB) 22.7 21.4 20.4 19.6 18.8 18.2 16.7 15.2 14.1 13.3 12.5 11.9 11.3 10.7 10.2 9.7 9.3 8.9 8.6 8.3 8.0 7.7 7.4 7.1 6.9 6.6 6.4 6.2 6.0 5.8 5.6 5.4 5.3 0.476 0.564 0.666 0.767 0.855 0.951 1.027 1.099 1.173 1.223 1.269 1.312 1.358 1.399 1.426 1.451 1.462 1.458 1.451 1.442 1.413 1.410 1.398 1.378 1.356 1.337 1.305 1.287 1.263 1.243 1.222 1.206 1.185 BOTTOM c a 3.00 b 1.40 2.60 4.00 (0.60) b 4.50 Lot No. 1.48 3.40 0.45 2.26 0.89 a 0951P 1.08 a:Gate b:Dorain c:Source Unit:mm Fig1.OUTLINE DRAWING (4/42) Mitsubishi Electric Mar./2005 VG MGF0951P TESTFIXTURE FREQ=2.15GHz VD 500ohm 5pF 4.7uF 51ohm 1000pF 1000pF 2pF 1pF 20pF 20pF Pin MGF0 951P Lot.No Pout 70mm 0.5pF Board Material:Teflon-Fiberglass,t=0.4mm,Er=2.6 70mm (5/42) Mitsubishi Electric Mar./2005 MGF0951P RF TEST DATA(CW) VD=10V,Idq=0.2A Gp,Po,Id(RF),Ig(RF) v.s. Pin Po v.s. Pin 12 10 Po(dBm) 9 8 7 Tc=80deg.C Tc=25deg.C 5 Tc=-20deg.C 4 0 5 10 15 20 25 0 5 Po v.s. Pin freq.=2.6GHz Po(dBm) Gp(dB) 10 9 8 7 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 4 0 5 10 15 20 25 30 8 7 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 4 10 20 Pin(dBm) 30 20 10 15 34 32 30 28 26 24 22 20 18 16 14 12 10 0 30 20 25 0.4 0.0 0.3 0.2 Tc=-20deg.C 5 10 15 20 25 -2.0 0 30 Pin(dBm) 30 10 15 20 25 30 Ig(RF) v.s. Pin freq.=2.7GHz 0.5 0.0 0.3 0.2 0.1 20 5 Pin(dBm) 0.4 10 Tc=80deg.C Tc=25deg.C Tc=-20deg.C Id(RF) v.s. Pin freq.=2.7GHz Tc=80deg.C Tc=25deg.C Tc=-20deg.C 25 30 -1.0 Pin(dBm) freq.=2.7GHz 15 20 -0.5 -1.5 Tc=80deg.C Tc=25deg.C 0 30 10 P Ig(RF) v.s. Pin freq.=2.6GHz 0.5 0 5 Pin(dBm) 0.5 0.0 5 25 0.5 0.1 Id(RF)(A) 9 15 Tc=-20deg.C Po v.s. Pin Po(dBm) Gp(dB) 10 10 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -2.0 Id(RF) v.s. Pin freq.=2.6GHz Tc=25deg.C freq.=2.7GHz 11 0 5 -1.0 Pin(dBm) Pin(dBm) 12 5 0 -0.5 -1.5 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.0 30 Tc=80deg.C 0 13 6 25 0.2 freq.=2.6GHz 34 32 30 28 26 24 22 20 18 16 14 12 10 Pin(dBm) Gp v.s. Pin 20 Id(RF)(A) 11 5 15 0.3 Pin(dBm) 12 6 10 0.0 0.1 Tc=80deg.C Tc=25deg.C Tc=-20deg.C Pin(dBm) Gp v.s. Pin 0.5 0.4 30 13 Ig(RF) v.s. Pin freq.=2.5GHz Ig(RF)(mA) 6 Id(RF) v.s. Pin freq.=2.5GHz 0.5 Ig(RF)(mA) Gp(dB) 11 freq.=2.5GHz 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF)(mA) freq.=2.5GHz Id(RF)(A) Gp v.s. Pin 13 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.0 0 10 20 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (6/42) -0.5 -1.0 -1.5 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -2.0 0 10 20 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.5GHz VD=10V Po v.s. Pin freq.=2.5GHz VD=10V Po(dBm) 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 25 30 0.4 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 5 Pin(dBm) 13 12 11 Po(dBm) 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 Pin(dBm) 25 12 11 Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 Pin(dBm) 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 25 30 10 15 20 Pin(dBm) 25 30 5 10 15 20 Pin(dBm) 25 -1.0 -1.5 -2.0 -2.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 30 Id(RF) v.s. Pin freq.=2.5GHz VD=8V 0.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 Ig(RF) v.s. Pin freq.=2.5GHz VD=8V 0.0 0.2 -1.0 -1.5 -2.0 -2.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A -3.0 0.1 -3.5 0.0 -4.0 15 10 15 20 25 30 Pin(dBm) -0.5 0.3 10 30 0.0 -4.0 5 25 -0.5 0.0 0 20 0.5 -3.5 5 15 P Ig(RF) v.s. Pin freq.=2.5GHz VD=9V -3.0 0 10 Pin(dBm) 0.1 0.4 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0.5 0 25 0.2 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Pin(dBm) 0.3 Po v.s. Pin freq.=2.5GHz VD=8V 34 32 30 28 26 24 22 20 18 16 14 12 10 -2.5 Id(RF) v.s. Pin freq.=2.5GHz VD=9V Pin(dBm) Gp v.s. Pin freq.=2.5GHz VD=8V 13 0 0.4 5 -2.0 -4.0 0.0 30 0.5 0 -1.5 -3.0 Po v.s. Pin freq.=2.5GHz VD=9V 34 32 30 28 26 24 22 20 18 16 14 12 10 30 0.2 -1.0 -3.5 Id(RF)(A) Gp(dB) 10 25 0.3 0.1 Id(RF)(A) Gp v.s. Pin freq.=2.5GHz VD=9V 10 15 20 Pin(dBm) 0.0 -0.5 Ig(RF)(mA) Gp(dB) 10 0.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 11 0.5 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF) v.s. Pin freq.=2.5GHz VD=10V Ig(RF)(mA) 12 Id(RF)(A) 13 Id(RF) v.s. Pin freq.=2.5GHz VD=10V 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (7/42) 0 5 10 15 20 Pin(dBm) 25 30 Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 25 30 0.5 0.4 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 5 Pin(dBm) 12 11 Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 Pin(dBm) 25 Gp v.s. Pin freq.=2.6GHz VD=8V 13 12 11 Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 6 5 4 0 5 10 15 20 Pin(dBm) 25 30 0.0 -3.5 -4.0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Pin(dBm) 25 20 25 20 Pin(dBm) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 30 5 25 30 0.5 0.0 -0.5 0.3 0.2 -1.0 -1.5 -2.0 -2.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A -3.0 0.1 -3.5 -4.0 5 10 15 15 20 25 30 Ig(RF) v.s. Pin freq.=2.6GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 10 Pin(dBm) 0.0 15 -2.5 Id(RF) v.s. Pin freq.=2.6GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 -2.0 Pin(dBm) 0.4 5 -1.5 -4.0 15 30 -1.0 -3.5 0.0 10 25 0.0 -3.0 5 20 Ig(RF) v.s. Pin freq.=2.6GHz VD=9V 0.1 0 15 -0.5 0.2 30 10 0.5 0.3 0.5 0 5 Pin(dBm) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Po v.s. Pin freq.=2.6Hz VD=8V 34 32 30 28 26 24 22 20 18 16 14 12 10 0 Id(RF) v.s. Pin freq.=2.6GHz VD=9V 0.4 5 10 15 20 25 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Pin(dBm) 0.5 0 30 0.1 Po v.s. Pin freq.=2.6Hz VD=9V 34 32 30 28 26 24 22 20 18 16 14 12 10 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0.2 0 Id(RF)(A) 13 0.5 0.0 0.3 10 15 20 25 30 Pin(dBm) Id(RF)(A) Gp v.s. Pin freq.=2.6GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 11 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF)(mA) 12 Ig(RF) v.s. Pin freq.=2.6GHz VD=10V Ig(RF)(mA) 13 Id(RF) v.s. Pin freq.=2.6GHz VD=10V Po v.s. Pin freq.=2.6Hz VD=10V Id(RF)(A) Gp v.s. Pin freq.=2.6GHz VD=10V 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (8/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.7GHz VD=10V 11 Po(dBm) 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 4 0 5 10 15 20 25 30 0.4 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 Pin(dBm) 11 Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 4 0 5 10 15 20 25 30 Po(dBm) Gp(dB) 10 9 8 7 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 5 10 15 20 Pin(dBm) 25 5 15 25 30 25 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 30 5 10 20 25 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A -3.5 0.0 -4.0 5 10 15 20 25 30 0 5 Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Pin(dBm) 25 30 0.0 -0.5 0.2 -1.0 -1.5 -2.0 -2.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A -3.0 0.1 -3.5 0.0 -4.0 10 15 30 0.5 0.3 5 10 15 20 25 Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 30 0.5 -3.0 0 20 25 Ig(RF) v.s. Pin freq.=2.7GHz VD=9V 0.1 30 15 Pin(dBm) 0.2 0.4 5 20 0.3 0.5 0 15 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Po v.s. Pin freq.=2.7Hz VD=8V 34 32 30 28 26 24 22 20 18 16 14 12 10 10 Id(RF) v.s. Pin freq.=2.7GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 -2.5 Pin(dBm) 0.4 5 -2.0 -4.0 0 30 Id(RF)(A) 11 4 20 Pin(dBm) 12 5 15 -1.5 -3.5 0.5 0 Gp v.s. Pin freq.=2.7GHz VD=8V 6 10 -1.0 -3.0 Po v.s. Pin freq.=2.7Hz VD=9V 34 32 30 28 26 24 22 20 18 16 14 12 10 Pin(dBm) 13 0.2 Pin(dBm) 12 6 0.3 0.1 Id(RF)(A) 13 0.0 -0.5 0.0 0 Gp v.s. Pin freq.=2.7GHz VD=9V 0.5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 5 0.5 Ig(RF)(mA) Gp(dB) 10 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF) v.s. Pin freq.=2.7GHz VD=10V Ig(RF)(mA) 12 Id(RF)(A) 13 6 Id(RF) v.s. Pin freq.=2.7GHz VD=10V Po v.s. Pin freq.=2.7Hz VD=10V 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (9/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.5GHz IDQ=0.2 10 Po(dBm) 9 8 7 VD=10V VD=9V VD=8V 4 0 5 10 15 20 25 VD=10V VD=9V VD=8V 5 Pin(dBm) 10 Po(dBm) 9 8 7 VD=10V VD=9V VD=8V 5 10 15 20 25 Gp v.s. Pin freq.=2.5GHz IDQ=0.12 Po v.s. Pin freq.=2.5Hz IDQ=0.12A Po(dBm) 10 9 8 7 VD=10V VD=9V VD=8V 5 4 5 10 15 20 Pin(dBm) 25 30 9 8 7 VD=10V VD=9V VD=8V 5 4 5 10 15 20 Pin(dBm) 25 30 25 10 15 20 Pin(dBm) 34 32 30 28 26 24 22 20 18 16 14 12 10 25 25 0.0 10 15 20 Pin(dBm) -1.0 -1.5 -2.0 -2.5 VD=10V VD=9V VD=8V -4.0 5 10 15 20 Pin(dBm) 25 0 30 5 Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.12A 0.5 0.0 -0.5 0.3 0.2 -1.0 -1.5 -2.0 -2.5 -3.0 0.1 VD=10V VD=9V VD=8V -3.5 -4.0 0.0 0 5 10 15 25 20 25 0 30 5 Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.05A 0.5 VD=10V VD=9V VD=8V 0.0 -0.5 0.3 0.2 -1.0 -1.5 -2.0 -2.5 -3.0 0.1 VD=10V VD=9V VD=8V -3.5 0.0 -4.0 0 5 10 15 10 15 20 25 30 Pin(dBm) Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.05A 30 10 15 20 25 30 Pin(dBm) VD=10V VD=9V VD=8V 0.4 5 30 -0.5 Pin(dBm) VD=10V VD=9V VD=8V 20 25 0.5 Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.12A 30 15 Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.16A -3.0 0 30 10 Pin(dBm) 0.2 0.5 0 5 -3.5 VD=10V VD=9V VD=8V 5 VD=10V VD=9V VD=8V 0 30 0.1 Id(RF)(A) 10 Po(dBm) Gp(dB) 11 20 0.3 Po v.s. Pin freq.=2.5Hz IDQ=0.05A 12 15 VD=10V VD=9V VD=8V 0.4 0 13 10 Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.16A 0.5 Gp v.s. Pin freq.=2.5GHz IDQ=0.05 6 5 0.0 34 32 30 28 26 24 22 20 18 16 14 12 10 -2.5 -4.0 0 VD=10V VD=9V VD=8V Pin(dBm) 6 30 0.4 5 -2.0 Pin(dBm) 10 15 20 Pin(dBm) 11 0 25 0.5 0 12 Gp(dB) 34 32 30 28 26 24 22 20 18 16 14 12 10 30 13 0 20 Id(RF)(A) Gp(dB) 11 0 15 -1.5 -3.5 Id(RF)(A) 12 4 10 -1.0 -3.0 0.1 Po v.s. Pin freq.=2.5Hz IDQ=0.16A 13 5 0.2 Pin(dBm) Gp v.s. Pin freq.=2.5GHz IDQ=0.16 6 0.3 0.0 0 30 0.0 -0.5 Ig(RF)(mA) 5 0.4 Ig(RF)(mA) 6 0.5 VD=10V VD=9V VD=8V Ig(RF)(mA) Gp(dB) 11 0.5 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.2A Ig(RF)(mA) 12 Id(RF)(A) 13 Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.2A Po v.s. Pin freq.=2.5Hz IDQ=0.2A 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (10/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.6GHz IDQ=0.2A Po v.s. Pin freq.=2.6Hz IDQ=0.2A 9 8 7 VD=10V VD=9V VD=8V 4 0 5 10 15 20 25 30 VD=10V VD=9V VD=8V 5 Gp v.s. Pin freq.=2.6GHz IDQ=0.16A 9 8 7 6 VD=10V VD=9V VD=8V 5 4 0 5 10 15 20 25 30 9 8 7 VD=10V VD=9V VD=8V 10 15 20 25 VD=10V VD=9V VD=8V 5 10 Po(dBm) Gp(dB) 11 9 8 7 VD=10V VD=9V VD=8V 4 10 15 20 Pin(dBm) 25 10 15 20 Pin(dBm) 30 0.5 0.0 -0.5 5 10 15 20 15 20 Pin(dBm) -2.5 25 30 VD=10V VD=9V VD=8V 0 5 25 Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A 0.5 VD=10V VD=9V VD=8V 0.0 -0.5 0.3 0.2 -1.0 -1.5 -2.0 -2.5 -3.0 0.1 VD=10V VD=9V VD=8V -3.5 -4.0 0.0 0 30 5 0 10 15 20 25 30 5 Pin(dBm) 25 30 0.0 -0.5 0.2 -1.0 -1.5 -2.0 -2.5 -3.0 0.1 VD=10V VD=9V VD=8V -3.5 -4.0 10 15 20 Pin(dBm) 20 25 0.5 0.3 5 15 Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V 0 10 Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A 30 10 15 20 25 30 Pin(dBm) 0.0 10 -2.0 Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V 5 -1.5 Pin(dBm) 0.4 0 -1.0 -4.0 0 0.5 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.16A 0.0 30 10 15 20 25 30 Pin(dBm) -3.5 Id(RF)(A) 12 5 25 5 -3.0 Po v.s. Pin freq.=2.6Hz IDQ=0.12A 13 0 20 VD=10V VD=9V VD=8V 0 0.1 VD=10V VD=9V VD=8V Gp v.s. Pin freq.=2.6GHz IDQ=0.05A 5 15 -2.5 30 0.2 0.4 0 25 0.3 0.5 Pin(dBm) 6 10 34 32 30 28 26 24 22 20 18 16 14 12 10 30 15 20 VD=10V VD=9V VD=8V 0.4 Id(RF)(A) Po(dBm) Gp(dB) 10 10 Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.16A Po v.s. Pin freq.=2.6Hz IDQ=0.12A 11 5 5 Po v.s. Pin freq.=2.6Hz IDQ=0.16A 5 -2.0 -4.0 0 30 Pin(dBm) 12 0 25 0.5 0 13 4 20 34 32 30 28 26 24 22 20 18 16 14 12 10 Gp v.s. Pin freq.=2.6GHz IDQ=0.12A 5 15 -1.5 -3.5 Pin(dBm) Pin(dBm) 6 10 -1.0 -3.0 0.1 Id(RF)(A) 10 Po(dBm) Gp(dB) 11 0.2 Pin(dBm) Pin(dBm) 12 0.3 0.0 0 13 0.0 -0.5 Ig(RF)(mA) 5 0.4 Ig(RF)(mA) 6 0.5 VD=10V VD=9V VD=8V Ig(RF)(mA) 10 Po(dBm) Gp(dB) 11 0.5 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF)(mA) 12 Id(RF)(A) 13 Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.2A Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.2A 25 30 MITSUBISHI ELECTRIC CORPORATION (11/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.7GHz IDQ=0.2A Po v.s. Pin freq.=2.7Hz IDQ=0.2A 9 8 7 VD=10V VD=9V VD=8V 5 4 5 10 15 20 25 30 0 Pin(dBm) 10 15 20 Pin(dBm) Gp v.s. Pin freq.=2.7GHz IDQ=0.16A Po v.s. Pin freq.=2.7Hz IDQ=0.16A 13 12 10 Po(dBm) 9 8 7 6 VD=10V VD=9V VD=8V 5 4 5 10 15 20 25 5 34 32 30 28 26 24 22 20 18 16 14 12 10 30 9 8 7 VD=10V VD=9V VD=8V 15 20 25 5 10 15 20 Pin(dBm) 25 25 0.0 -0.5 20 25 10 15 20 Pin(dBm) 25 10 15 20 25 VD=10V VD=9V VD=8V 5 4 5 10 15 20 Pin(dBm) 25 30 5 10 15 20 Pin(dBm) 25 30 VD=10V VD=9V VD=8V 0 0.3 0.2 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 10 15 20 Pin(dBm) 15 20 25 30 VD=10V VD=9V VD=8V 0 5 10 Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.05A 0.1 0 5 Pin(dBm) 0.0 0 -2.5 30 VD=10V VD=9V VD=8V 0.4 Id(RF)(A) Po(dBm) 6 -2.0 -4.0 0.5 VD=10V VD=9V VD=8V -1.5 -3.5 Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.05A 7 -1.0 -3.0 0.1 5 30 0.0 0.2 0 25 -0.5 0.3 30 10 15 20 Pin(dBm) 0.5 Po v.s. Pin freq.=2.7Hz IDQ=0.05A 8 5 Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V Gp v.s. Pin freq.=2.7GHz IDQ=0.05A 9 VD=10V VD=9V VD=8V 0 Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.12A Pin(dBm) 10 -2.5 30 Pin(dBm) 11 -2.0 -4.0 5 Pin(dBm) 34 32 30 28 26 24 22 20 18 16 14 12 10 -1.5 -3.5 0.0 15 -1.0 -3.0 0 15 20 25 30 0.5 0.2 30 10 Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.16A 0.1 VD=10V VD=9V VD=8V 10 5 Pin(dBm) 0.3 0.4 5 VD=10V VD=9V VD=8V 0 30 VD=10V VD=9V VD=8V 0.5 0 12 Gp(dB) 34 32 30 28 26 24 22 20 18 16 14 12 10 30 13 0 20 -2.5 Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.16A Id(RF)(A) Po(dBm) Gp(dB) 10 10 0 Po v.s. Pin freq.=2.7Hz IDQ=0.12A 11 5 15 -2.0 -4.0 0.0 30 Pin(dBm) 12 0 10 -1.5 -3.5 0.0 5 -1.0 -3.0 0.1 VD=10V VD=9V VD=8V 0 13 4 0.2 0.4 Gp v.s. Pin freq.=2.7GHz IDQ=0.12A 5 0.3 0.5 Pin(dBm) 6 25 0.0 -0.5 Ig(RF)(mA) Gp(dB) 11 0 VD=10V VD=9V VD=8V Id(RF)(A) 0 0.4 Ig(RF)(mA) 6 0.5 VD=10V VD=9V VD=8V Ig(RF)(mA) 10 Po(dBm) Gp(dB) 11 0.5 34 32 30 28 26 24 22 20 18 16 14 12 10 Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.2A Ig(RF)(mA) 12 Id(RF)(A) 13 Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.2A 25 5 10 15 20 25 30 30 MITSUBISHI ELECTRIC CORPORATION (12/42) Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) VD=10V,Idq=0.2A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 20 25 30 10 15 Po(dBm) 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 30 15 Po(dBm) 30 25 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 Po(dBm) 30 Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 15 15 20 25 30 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 15 20 30 Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 15 20 25 30 Po(dBm) ACLR +10MHz freq.=2.7GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 25 ACLR +10MHz freq.=2.6GHz ACLR +5MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 Po(dBm) Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 25 Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 ACLR(dBc) ACLR(dBc) ACLR(dBc) 20 25 ACLR -10MHz freq.=2.7GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C 15 20 20 ACLR +5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Po(dBm) ACLR -5MHz freq.=2.7GHz 10 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-25deg.C Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 ACLR(dBc) ACLR(dBc) ACLR(dBc) 15 30 ACLR -10MHz freq.=2.6GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 25 Tc=80deg.C Tc=25deg.C Tc=-25deg.C Po(dBm) ACLR -5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 ACLR +10MHz freq.=2.5GHz ACLR(dBc) 15 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) 10 ACLR +5MHz freq.=2.5GHz ACLR(dBc) Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) ACLR -10MHz freq.=2.5GHz ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 25 30 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (13/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C Tc=-25deg.C 10 15 20 25 30 Po(dBm) Mar./2005 15 20 25 30 10 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 15 20 25 Po(dBm) 30 15 20 25 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 ACLR +5MHz freq.=2.5GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 ACLR +10MHz freq.=2.5GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po(dBm) Po(dBm) Po(dBm) Po(dBm) ACLR -5MHz freq.=2.5GHz VD=8V ACLR -10MHz freq.=2.5GHz VD=8V ACLR +5MHz freq.=2.5GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR +10MHz freq.=2.5GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 10 ACLR -10MHz freq.=2.5GHz VD=9V ACLR(dBc) ACLR(dBc) 10 30 15 20 25 Po(dBm) 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) ACLR(dBc) ACLR -5MHz freq.=2.5GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR(dBc) Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR +10MHz freq.=2.5GHz VD=10V ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.5GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 Po(dBm) 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.5GHz VD=10V ACLR(dBc) ACLR -5MHz freq.=2.5GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR(dBc) MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 10 15 20 25 Po(dBm) 30 MITSUBISHI ELECTRIC CORPORATION (14/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 Po(dBm) 30 Mar./2005 20 25 Po(dBm) 30 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 20 Po(dBm) 25 30 30 10 15 20 25 ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 15 20 25 Po(dBm) 30 10 ACLR +5MHz freq.=2.6GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +10MHz freq.=2.6GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 15 20 25 Po(dBm) 30 ACLR +10MHz freq.=2.6GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po(dBm) Po(dBm) Po(dBm) ACLR -10MHz freq.=2.6GHz VD=8V ACLR +5MHz freq.=2.6GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR +10MHz freq.=2.6GHz VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR(dBc) ACLR(dBc) 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Po(dBm) ACLR -5MHz freq.=2.6GHz VD=8V -10 IDQ=0.2A IDQ=0.16A -15 IDQ=0.12A -20 IDQ=0.05A -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) ACLR -10MHz freq.=2.6GHz VD=9V ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.6GHz VD=9V 15 ACLR(dBc) 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.6GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Po(dBm) 25 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.6GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR -5MHz freq.=2.6GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR(dBc) MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 10 15 20 25 30 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (15/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po(dBm) Mar./2005 25 30 10 10 20 25 30 ACLR(dBc) 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR +10MHz freq.=2.7GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po(dBm) Po(dBm) Po(dBm) ACLR -5MHz freq.=2.7GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR -10MHz freq.=2.7GHz VD=9V ACLR +5MHz freq.=2.7GHz VD=9V ACLR +10MHz freq.=2.7GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 15 20 25 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 10 15 20 25 30 Po(dBm) Po(dBm) Po(dBm) Po(dBm) ACLR -5MHz freq.=2.7GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR -10MHz freq.=2.7GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR +5MHz freq.=2.7GHz VD=8V ACLR +10MHz freq.=2.7GHz VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 15 20 Po(dBm) 25 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 20 Po(dBm) 25 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) 10 ACLR(dBc) 20 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.7GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Po(dBm) ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 ACLR(dBc) ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.7GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR -5MHz freq.=2.7GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A ACLR(dBc) ACLR(dBc) MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 10 15 20 25 30 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (16/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 10 30 15 20 25 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR(dBc) 15 20 25 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 15 20 25 ACLR -5MHz freq.=2.5GHz IDQ=0.12A ACLR -10MHz freq.=2.5GHz IDQ=0.12A ACLR +5MHz freq.=2.5GHz IDQ=0.12A 20 25 Po(dBm) 30 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V 15 20 25 Po(dBm) 30 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR -10MHz freq.=2.5GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 20 25 Po(dBm) 30 15 20 25 Po(dBm) 30 ACLR +10MHz freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V 10 15 VD=10V VD=9V VD=8V 10 ACLR +5MHz freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V 10 15 30 ACLR +10MHz freq.=2.5GHz IDQ=0.12A VD=10V VD=9V VD=8V 10 20 25 Po(dBm) VD=10V VD=9V VD=8V 10 ACLR(dBc) ACLR(dBc) 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 Po(dBm) 15 ACLR +10MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V 10 VD=10V VD=9V VD=8V 10 30 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V 10 ACLR(dBc) 10 Po(dBm) ACLR(dBc) ACLR(dBc) 30 ACLR -10MHz freq.=2.5GHz IDQ=0.16A ACLR -5MHz freq.=2.5GHz IDQ=0.05A 10 25 ACLR -5MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V 10 20 Po(dBm) VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +10MHz freq.=2.5GHz IDQ=0.2A ACLR(dBc) 25 Po(dBm) VD=10V VD=9V VD=8V 10 ACLR(dBc) 20 VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 ACLR(dBc) ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) VD=10V VD=9V VD=8V ACLR +5MHz freq.=2.5GHz IDQ=0.2A ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.5GHz IDQ=0.2A ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.5GHz IDQ=0.2A 30 MITSUBISHI ELECTRIC CORPORATION (17/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) 30 Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 10 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR(dBc) ACLR(dBc) 10 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR(dBc) ACLR(dBc) 15 20 25 Po(dBm) 30 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 30 c 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 30 30 15 20 25 Po(dBm) VD=10V VD=9V VD=8V 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 10 15 20 25 Po(dBm) 10 15 20 25 Po(dBm) 30 15 20 25 Po(dBm) 30 MGF0951P ACLR +10MHz freq.=2.6GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V c 10 30 ACLR +5MHz freq.=2.6GHz IDQ=0.05A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) VD=10V VD=9V VD=8V 10 VD=10V VD=9V VD=8V c 15 ACLR +10MHz freq.=2.6GHz IDQ=0.16A ACLR +5MHz freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V 10 20 25 Po(dBm) VD=10V VD=9V VD=8V ACLR -10MHz freq.=2.6GHz IDQ=0.05A VD=10V VD=9V VD=8V 10 20 25 Po(dBm) VD=10V VD=9V VD=8V 10 ACLR -5MHz freq.=2.6GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.6GHz IDQ=0.16A ACLR -10MHz freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V c 10 VD=10V VD=9V VD=8V 10 ACLR -5MHz freq.=2.6GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) ACLR -10MHz freq.=2.6GHz IDQ=0.16A ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.6GHz IDQ=0.16A 15 VD=10V VD=9V VD=8V ACLR(dBc) 30 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +10MHz freq.=2.6GHz IDQ=0.2A 15 20 25 Po(dBm) 30 ACLR +10MHz freq.=2.6GHz IDQ=0.05A ACLR(dBc) 20 25 Po(dBm) ACLR(dBc) 15 VD=10V VD=9V VD=8V ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) VD=10V VD=9V VD=8V ACLR +5MHz freq.=2.6GHz IDQ=0.2A ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.6GHz IDQ=0.2A ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.6GHz IDQ=0.2A 30 MITSUBISHI ELECTRIC CORPORATION (18/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) 30 Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal 30 10 10 15 20 25 Po(dBm) ACLR(dBc) ACLR(dBc) 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) 30 30 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 30 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 15 20 25 Po(dBm) 15 20 25 Po(dBm) 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 20 25 Po(dBm) 30 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) 30 ACLR +10MHz freq.=2.7GHz IDQ=0.05A VD=10V VD=9V VD=8V 10 30 ACLR +10MHz freq.=2.7GHz IDQ=0.12A ACLR +5MHz freq.=2.7GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) VD=10V VD=9V VD=8V 10 VD=10V VD=9V VD=8V 10 15 ACLR +10MHz freq.=2.7GHz IDQ=0.16A ACLR +5MHz freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V 10 15 VD=10V VD=9V VD=8V 10 30 VD=10V VD=9V VD=8V 10 VD=10V VD=9V VD=8V 15 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.7GHz IDQ=0.05A ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.7GHz IDQ=0.05A 20 25 Po(dBm) ACLR -10MHz freq.=2.7GHz IDQ=0.12A 10 30 15 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V 10 15 ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 VD=10V VD=9V VD=8V 10 10 ACLR -10MHz freq.=2.7GHz IDQ=0.16A ACLR -5MHz freq.=2.7GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 30 VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +10MHz freq.=2.7GHz IDQ=0.2A ACLR(dBc) ACLR -5MHz freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V 15 ACLR(dBc) 20 25 Po(dBm) ACLR(dBc) 15 ACLR(dBc) ACLR(dBc) 10 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.7GHz IDQ=0.2A ACLR(dBc) VD=10V VD=9V VD=8V ACLR -10MHz freq.=2.7GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR(dBc) ACLR(dBc) ACLR -5MHz freq.=2.7GHz IDQ=0.2A 30 MITSUBISHI ELECTRIC CORPORATION (19/42) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VD=10V VD=9V VD=8V 10 15 20 25 Po(dBm) 30 Mar./2005 MGF0951P RF TEST DATA VD=10V,Idq=0.2A IM3,IM5 v.s. Pin IM3,IM5 v.s. Po 0 IM3 High IM5 High IM3 Low IM5 Low IM3,IM5(dBc) -10 -20 -30 -40 f1=2.50GHz f2=2.51GHz -50 -60 -70 10 15 20 25 30 25 30 25 30 Po(S.C.L.)(dBm) IM3,IM5 v.s. Po 0 IM3 High IM5 High IM3 Low IM5 Low IM3,IM5(dBc) -10 -20 -30 f1=2.60GHz f2=2.61GHz -40 -50 -60 -70 10 15 20 Po(S.C.L.)(dBm) IM3,IM5 v.s. Po 0 IM3 High IM5 High IM3 Low IM5 Low IM3,IM5(dBc) -10 -20 -30 -40 f1=2.70GHz f2=2.71GHz -50 -60 -70 10 15 20 Po(S.C.L.)(dBm) MITSUBISHI ELECTRIC CORPORATION (20/42) Mar./2005 (21/42) Mitsubishi Electric Mar./2005 MGF0951P RF TEST DATA(CW) VD=10V,IDQ=0.2A Gp,Po,Id(RF),Ig(RF) v.s. Pin Po v.s. Pin freq.=2.11GHz freq.=2.11GHz 13 33 12 31 11 29 10 9 0.5 0.4 27 25 23 1.0 0.3 0.2 21 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 6 5 5 10 15 20 25 30 Pin(dBm) 0.5 0.0 -0.5 -1.0 19 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 17 15 0 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 2.0 1.5 8 7 Ig(RF) v.s. Pin freq.=2.11GHz Ig(RF)(mA) 35 Id(RF) v.s. Pin freq.=2.11GHz Id(RF)(A) 14 Po(dBm) Gp(dB) Gp v.s. Pin Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.1 0.0 0 5 10 15 20 25 30 Pin(dBm) 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (22/42) -1.5 -2.0 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) VD=10V,IDQ=0.2A Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin Po v.s. Pin freq.=2.14GHz Id(RF) v.s. Pin freq.=2.14GHz 35 14 Ig(RF) v.s. Pin freq.=2.14GHz 0.5 33 13 2.0 0.4 9 27 Id(RF)(A) Po(dBm) 10 25 23 8 1.0 Ig(RF)(mA) 29 11 0.3 0.2 21 7 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 6 5 0 5 10 15 20 25 30 Pin(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C 1.5 31 12 Gp(dB) freq.=2.14GHz 19 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 17 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.1 0 5 10 15 20 25 30 Pin(dBm) 0.0 -0.5 -1.0 -1.5 -2.0 0.0 15 0.5 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (23/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) VD=10V,IDQ=0.2A Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin Po v.s. Pin 35 freq.=2.17GHz 14 Id(RF) v.s. Pin freq.=2.17GHz Ig(RF) v.s. Pin freq.=2.17GHz 2.0 0.5 33 13 0.4 9 8 27 Id(RF)(A) Po(dBm) 10 25 23 1.0 Ig(RF)(mA) 29 11 0.3 0.2 21 7 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 6 5 19 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 17 15 0 5 10 15 20 25 30 Pin(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C 1.5 31 12 Gp(dB) freq.=2.17GHz 0 5 10 15 20 25 30 Pin(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.1 0.5 0.0 -0.5 -1.0 -1.5 -2.0 0.0 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (24/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.11GHz VD=10V Po v.s. Pin freq.=2.11GHz VD=10V 14 35 13 33 Ig(RF) v.s. Pin freq.=2.11GHz VD=10V 2.0 0.5 IDQ=0.2A IDQ=0.2A IDQ=0.16A 1.5 1.0 9 25 23 8 21 7 19 IDQ=0.2A 6 IDQ=0.16A 5 0 5 10 15 20 25 30 Pin(dBm) Id(RF)(A) Po(dBm) 10 27 Ig(RF)(mA) 29 11 IDQ=0.16A 0.4 31 12 Gp(dB) Id(RF) v.s. Pin freq.=2.11GHz VD=10V 0.3 0.2 0.0 -0.5 -1.0 0.1 IDQ=0.2A 17 0.5 -1.5 IDQ=0.16A 0.0 15 0 5 10 15 20 25 30 Pin(dBm) -2.0 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (25/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.14GHz VD=10V 35 14 2.0 IDQ=0.2A IDQ=0.16A 31 12 Ig(RF) v.s. Pin freq.=2.14GHz VD=10V 0.5 33 13 IDQ=0.2A 1.5 0.4 IDQ=0.16A 1.0 9 27 Id(RF)(A) Po(dBm) 10 25 23 8 21 7 19 IDQ=0.2A 17 IDQ=0.16A IDQ=0.2A 6 IDQ=0.16A 5 0 5 10 15 20 25 30 Pin(dBm) Ig(RF)(mA) 29 11 Gp(dB) Id(RF) v.s. Pin freq.=2.14GHz VD=10V Po v.s. Pin freq.=2.14Hz VD=10V 0.3 0.2 0.5 0.0 -0.5 -1.0 15 0.1 -1.5 -2.0 0.0 0 5 10 15 20 25 30 Pin(dBm) 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (26/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.17GHz VD=10V 14 35 2.0 IDQ=0.2A 31 12 Ig(RF) v.s. Pin freq.=2.17GHz VD=10V 0.5 33 13 0.4 IDQ=0.16A 1.0 25 23 8 21 7 19 IDQ=0.2A 6 IDQ=0.16A 5 0 5 10 15 20 25 30 Pin(dBm) IDQ=0.2A 17 Ig(RF)(mA) 9 27 Id(RF)(A) Po(dBm) 10 0.3 0.2 5 10 15 20 25 30 Pin(dBm) 0.0 -0.5 -1.5 0.0 0 0.5 -1.0 0.1 IDQ=0.16A 15 IDQ=0.2A 1.5 IDQ=0.16A 29 11 Gp(dB) Id(RF) v.s. Pin freq.=2.17GHz VD=10V Po v.s. Pin freq.=2.17Hz VD=10V -2.0 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (27/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.11GHz IDQ=0.2 14 35 13 33 12 31 Ig(RF) v.s. Pin freq.=2.11GHz IDQ=0.2A 2.0 0.5 VD=10Ｖ Ｖ VD=10Ｖ Ｖ VD=9V 1.5 0.4 VD=9V 1.0 9 8 Id(RF)(A) Po(dBm) 10 27 25 23 Ig(RF)(mA) 29 11 Gp(dB) Id(RF) v.s. Pin freq.=2.11GHz IDQ=0.2A Po v.s. Pin freq.=2.11Hz IDQ=0.2A 0.3 0.2 21 7 VD=10Ｖ Ｖ 6 VD=9V 0 5 10 15 20 25 30 Pin(dBm) 0.0 -0.5 -1.0 19 VD=10Ｖ Ｖ 17 VD=9V 0.1 -1.5 -2.0 0.0 15 5 0.5 0 5 10 15 20 25 30 Pin(dBm) 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (28/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.14GHz IDQ=0.2A Po v.s. Pin freq.=2.14Hz IDQ=0.2A 14 VD=10Ｖ Ｖ VD=9V 33 10 9 8 27 25 23 1.0 Ig(RF)(mA) 11 29 0.3 0.2 21 7 VD=10Ｖ Ｖ 19 VD=10Ｖ Ｖ 6 VD=9V 5 5 10 15 20 25 30 Pin(dBm) 5 10 15 20 25 30 Pin(dBm) 0.0 -0.5 -1.0 VD=10Ｖ Ｖ VD=9V -1.5 0.0 0 0.5 0.1 VD=9V 17 15 0 1.5 0.4 Id(RF)(A) 31 Po(dBm) 12 Ig(RF) v.s. Pin freq.=2.14GHz IDQ=0.2A 2.0 0.5 35 13 Gp(dB) Id(RF) v.s. Pin freq.=2.14GHz IDQ=0.2A -2.0 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (29/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.17GHz IDQ=0.2A Po v.s. Pin freq.=2.17Hz IDQ=0.2A 14 35 13 33 2.0 VD=10Ｖ Ｖ VD=9V 0.4 1.5 1.0 9 VD=10Ｖ Ｖ VD=9V 8 7 27 25 23 21 17 5 15 5 10 15 20 25 30 Pin(dBm) VD=10Ｖ Ｖ VD=9V 19 6 0 Id(RF)(A) Po(dBm) 10 Ig(RF)(mA) 29 11 Gp(dB) 0.5 31 12 Ig(RF) v.s. Pin freq.=2.17GHz IDQ=0.2A Id(RF) v.s. Pin freq.=2.17GHz IDQ=0.2A 0.3 0.2 0.5 0.0 -0.5 -1.0 0.1 VD=10Ｖ Ｖ VD=9V -1.5 0.0 0 5 10 15 20 25 30 Pin(dBm) -2.0 0 5 10 15 20 25 30 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (30/42) 0 5 10 15 20 25 30 Pin(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) VD=10V,IDQ=0.2A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal -10 -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -20 -20 -15 -20 -25 -25 -30 -30 -30 -40 -45 -50 ACLR(dBc) -25 -35 ACLR +5MHz freq.=2.11GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 ACLR(dBc) ACLR(dBc) ACLR -10MHz freq.=2.11GHz -35 -40 -45 ACLR +10MHz freq.=2.11GHz -10 -20 -25 -30 -35 -40 -45 -35 -40 -45 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 Po(dBm) 25 30 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 ACLR(dBc) ACLR -5MHz freq.=2.11GHz 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (31/42) 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) VD=10V,IDQ=0.2A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.14GHz -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -10 -15 -20 ACLR +5MHz freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -15 -20 -25 -30 -30 -40 -45 -50 -35 -40 -45 ACLR(dBc) -25 -30 ACLR(dBc) -25 -30 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 Po(dBm) 25 30 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (32/42) ACLR +10MHz freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -25 ACLR(dBc) ACLR(dBc) -20 ACLR -10MHz freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) VD=10V,IDQ=0.2A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.17GHz -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -10 -15 -20 ACLR +5MHz freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -15 -20 -25 -30 -30 -40 -45 -50 -35 -40 -45 ACLR(dBc) -25 -30 ACLR(dBc) -25 -30 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 Po(dBm) 25 30 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (33/42) ACLR +10MHz freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -25 ACLR(dBc) ACLR(dBc) -20 ACLR -10MHz freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -10MHz freq.=2.11GHz VD=10V ACLR -5MHz freq.=2.11GHz VD=10V -10 -15 IDQ=0.16A -25 -25 -25 -30 -30 -30 -25 -30 -40 -45 -35 -40 -45 -35 -40 -45 -40 -45 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 10 15 20 Po(dBm) 25 30 -70 -70 10 15 20 25 Po(dBm) 30 IDQ=0.16A -35 -50 -70 IDQ=0.2A -15 IDQ=0.16A -20 -20 -35 -15 IDQ=0.16A -10 IDQ=0.2A -20 -20 ACLR(dBc) ACLR(dBc) -15 -10 IDQ=0.2A ACLR +10MHz freq.=2.11GHz VD=10V ACLR(dBc) IDQ=0.2A ACLR(dBc) -10 ACLR +5MHz freq.=2.11GHz VD=10V 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (34/42) 30 10 15 20 25 Po(dBm) 30 Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.14GHz VD=10V -10 -10 IDQ=0.2A -15 ACLR +5MHz freq.=2.14GHz VD=10V -10 IDQ=0.2A -15 IDQ=0.16A -20 ACLR +10MHz freq.=2.14GHz VD=10V -10 IDQ=0.2A -15 IDQ=0.16A -20 IDQ=0.16A -20 -30 -30 -30 -30 -40 -45 -40 -45 ACLR(dBc) -25 ACLR(dBc) -25 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 25 Po(dBm) 30 IDQ=0.16A -20 -25 -35 IDQ=0.2A -15 -25 ACLR(dBc) ACLR(dBc) ACLR -10MHz freq.=2.14GHz VD=10V -70 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (35/42) 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.17GHz VD=10V ACLR -10MHz freq.=2.17GHz VD=10V -10 -10 IDQ=0.2A -15 ACLR +10MHz freq.=2.17GHz VD=10V -10 IDQ=0.2A -15 IDQ=0.16A -20 -10 IDQ=0.2A IDQ=0.16A -15 IDQ=0.16A -20 -20 -20 -25 -30 -30 -30 -30 -40 -45 -35 -40 -45 ACLR(dBc) -25 ACLR(dBc) -25 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 10 15 20 25 Po(dBm) 30 -70 10 15 20 25 Po(dBm) 30 IDQ=0.2A IDQ=0.16A -15 -25 ACLR(dBc) ACLR(dBc) ACLR +5MHz freq.=2.17GHz VD=10V -70 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (36/42) 30 10 15 20 25 Po(dBm) 30 Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.11GHz IDQ=0.2A ACLR -10MHz freq.=2.11GHz IDQ=0.2A -10 -10 VD=10Ｖ Ｖ VD=9V -15 -20 ACLR +10MHz freq.=2.11GHz IDQ=0.2A -10 VD=10Ｖ Ｖ VD=9V -15 -20 -10 VD=10Ｖ Ｖ VD=9V -15 -20 -20 -25 -30 -30 -30 -30 -40 -45 -35 -40 -45 ACLR(dBc) -25 ACLR(dBc) -25 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 Po(dBm) 25 30 VD=10Ｖ Ｖ VD=9V -15 -25 ACLR(dBc) ACLR(dBc) ACLR +5MHz freq.=2.11GHz IDQ=0.2A -70 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (37/42) 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.14GHz IDQ=0.2A ACLR -10MHz freq.=2.14GHz IDQ=0.2A -10 -10 VD=10Ｖ Ｖ VD=9V -15 -20 -10 VD=10Ｖ Ｖ VD=9V -15 -20 ACLR +10MHz freq.=2.14GHz IDQ=0.2A -10 VD=10Ｖ Ｖ VD=9V -15 -20 -20 -25 -30 -30 -30 -30 -40 -45 -35 -40 -45 ACLR(dBc) -25 ACLR(dBc) -25 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 10 15 20 Po(dBm) 25 30 10 15 20 Po(dBm) 25 30 VD=10Ｖ Ｖ VD=9V -15 -25 ACLR(dBc) ACLR(dBc) ACLR +5MHz freq.=2.14GHz IDQ=0.2A -70 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (38/42) 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal ACLR -5MHz freq.=2.17GHz IDQ=0.2A ACLR -10MHz freq.=2.17GHz IDQ=0.2A -10 -10 VD=10Ｖ Ｖ VD=9V -15 -20 ACLR +10MHz freq.=2.17GHz IDQ=0.2A -10 -10 VD=10Ｖ Ｖ VD=9V -15 -20 VD=10Ｖ Ｖ VD=9V -15 -20 -20 -25 -30 -30 -30 -30 -40 -45 -35 -40 -45 ACLR(dBc) -25 ACLR(dBc) -25 -35 -35 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 10 15 20 25 Po(dBm) 30 -70 10 15 20 Po(dBm) 25 30 VD=10Ｖ Ｖ VD=9V -15 -25 ACLR(dBc) ACLR(dBc) ACLR +5MHz freq.=2.17GHz IDQ=0.2A -70 10 15 20 25 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (39/42) 30 10 15 20 25 30 Po(dBm) Mar./2005 MGF0951P RF TEST DATA VD=10V,IDQ=0.2A IM3,IM5 v.s. Pin IM3,IM5 v.s. Po -10 -20 -20 f1=2.11GHz f2=2.12GHz -30 -40 0 IM3 High IM5 High IM3 Low IM5 Low -10 IM3,IM5(dBc) IM3,IM5(dBc) 0 IM3 High IM5 High IM3 Low IM5 Low IM3,IM5 v.s. Po -20 f1=2.14GHz f2=2.15GHz -30 -40 f1=2.17GHz f2=2.18GHz -30 -40 -50 -50 -50 -60 -60 -60 -70 -70 10 15 20 25 Po(S.C.L.)(dBm) 30 IM3 High IM5 High IM3 Low IM5 Low -10 IM3,IM5(dBc) 0 IM3,IM5 v.s. Po -70 10 15 20 25 30 10 Po(S.C.L.)(dBm) MITSUBISHI ELECTRIC CORPORATION (40/42) 15 20 25 30 Po(S.C.L.)(dBm) Mar./2005 (41/42) Mitsubishi Electric Mar./2005 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. (42/42) Mitsubishi Electric Mar./2005