FAIRCHILD FDU6692

FDD6692/FDU6692
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
• 54 A, 30 V.
RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical)
• Fast switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor drives
D
D
G
S
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
Absolute Maximum Ratings
Symbol
G
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±16
V
ID
Drain Current
(Note 3)
54
A
(Note 1a)
162
(Note 1)
57
(Note 1a)
3.8
– Continuous
– Pulsed
PD
Power Dissipation for Single Operation
1.6
(Note 1b)
TJ, TSTG
W
Operating and Storage Junction Temperature Range
°C
-55 to +175
Thermal Characteristics
(Note 1)
2.6
°C/W
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJA
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6692
FDD6692
D-PAK (TO-252)
13’’
12mm
2500 units
FDU6692
FDU6692
I-PAK (TO-251)
Tube
N/A
75
2001 Fairchild Semiconductor Corporation
FDD/FDU6692 Rev C(W)
FDD6692/FDU6692
April 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID=14A
165
mJ
14
A
Off Characteristics
VGS = 0 V, ID = 250 µA
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 16 V,
IGSSR
Gate–Body Leakage, Reverse
VGS = –16 V,
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
ID = 250 µA, Referenced to 25°C
V
26
mV/°C
1
µA
VDS = 0 V
100
nA
VDS = 0 V
–100
nA
3
V
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 14 A
ID = 13 A
VGS = 4.5 V,
VGS = 10 V, ID = 14 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 14 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1
1.6
–5
9.5
11.5
16.5
mV/°C
12
14.5
18
50
mΩ
A
54
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
2164
pF
357
pF
138
pF
(Note 2)
VDD = 15 V,
ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
9
18
ns
5
10
ns
ns
td(off)
Turn–Off Delay Time
35
56
tf
Turn–Off Fall Time
10
20
ns
Qg
Total Gate Charge
18
25
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5 V
ID = 14 A,
5
nC
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 3.2 A
(Note 2)
0.72
3.2
A
1.2
V
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Electrical Characteristics
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
FDD6692/FDU6692
Typical Characteristics
2.25
50
4.5V
6.0V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
40
3.5V
3.0V
30
20
10
2.5V
2
1.75
VGS = 3.0V
1.5
3.5V
1.25
4.5V
6.0V
10V
1
0.75
0
0
0.5
1
1.5
2
0
2.5
10
Figure 1. On-Region Characteristics.
30
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.03
ID = 7.0 A
ID = 14A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.6
-50
-25
0
25
50
75
100
125
0.005
150
2
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
25oC
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
125oC
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Typical Characteristics
3000
VDS = 10V
ID = 14A
15V
20V
6
4
f = 1MHz
VGS = 0 V
2500
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
2
CISS
2000
1500
1000
COSS
500
CRSS
0
0
0
5
10
15
20
25
30
0
35
Figure 7. Gate Charge Characteristics.
10
20
25
30
80
P(pk), PEAK TRANSIENT POWER (W)
100µs
100
1ms
10ms
100ms
RDS(ON) LIMIT
10
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
0.1
TA = 25oC
0.01
0.01
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
60
40
20
0
0.1
1
10
0.1
100
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
1000
ID, DRAIN CURRENT (A)
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA (t) = r(t) + R θJA
R θJA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD/ FDU6692 Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1