Power management (dual digital transistors) IMD16A zDimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5) (6) (3) (2) (1) zPackage, marking, and packaging specifications Part No. IMD16A Package SMT6 Marking D16 Code T108 Basic ordering unit (pieces) 3000 ROHM : SMT6 EIAJ : SC-74 zAbsolute maximum ratings (Ta=25°C) DTr1 (PNP) Parameter Supply voltage Input voltage zInner circuit Symbol Limits Unit VCC −50 V (6) R2=22kΩ DTr1 DTr2 −500 IC (5) V 5 Output current (4) R1=2.2kΩ −12 VIN Each lead has same dimensions mA R1=100kΩ (3) DTr2 (NPN) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Symbol Limits Unit Parameter Collector current (2) (1) Total Parameter ∗ Collector power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ 200mW per element must not be exceeded. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.06 - Rev.E IMD16A Data Sheet zElectrical characteristics (Ta=25°C) DTr1 Parameter Unit Conditions Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −2 − − VO(on) − − −0.3 V II − − −3 mA VI= −5V IO(off) − − −0.5 µA VCC= −50V , VI=0V 82 − − − − 250 − MHz Input voltage Output voltage Input current Output current V VCC= −5V , IO= −100µA VO= −0.3V , IO= −20mA IO/II= −50mA / −2.5mA Transition frequency ∗1 fT ∗2 Input resistance R1 1.54 2.2 2.86 kΩ R 2 / R1 8 10 12 − − Conditions GI DC current gain Resistance ratio ∗ 1 Measured using pulse current. IO= −50mA , VO= −5V VCE= −10V , IE=50mA , f=100MHz − ∗ 2 Transition frequency of mounted transistor. DTr2 Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 0.5 µA VCB=50V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio IEBO − − 0.5 µA VEB=4V VCE(sat) − − 0.3 V IC/IB=1mA/0.1mA hFE 100 250 600 − VCE=5V , IC=1mA − 250 − MHz 70 100 130 kΩ Transition frequency fT Input resistance R1 ∗ VCE=10V , IE=−5mA , f=100MHz − ∗Transition frequency of mounted transistor. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/3 2009.06 - Rev.E IMD16A Data Sheet zElectrical characteristic curves DTr1 (PNP) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta= −40°C 5 Ta=25°C Ta=100°C 2 1 500m 200m 100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m Ta=100°C 1m 500µ Ta=100°C 200µ 100µ Ta= −40°C Ta=25°C 50µ 20µ 10µ 5µ 1 Ta=25°C 100 Ta= −40°C 50 20 10 5 500m 1 1.5 2 2.5 3 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. Input voltage (OFF characteristics) 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. Output current characteristics IO/II=20/1 500m OUTPUT VOLTAGE : VO(on) (V) 200 2 OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. Output current (ON characterisitics) VO=5V 500 2m 2µ 1µ 0 500m 1k VCC=5V DC CURRENT GAIN : GI 100 Ta=100°C 200m Ta=25°C 100m 50m Ta= −40°C 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. Output current characteristics 1k DC CURRENT GAIN : hFE 500 VCE=5V Ta=100°C 200 100 Ta=25°C 50 Ta= −40°C 20 10 5 2 1 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DTr2 (NPN) COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. Output current characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 IC/IB=10/1 500m 200m 100m Ta=100°C Ta=25°C 50m 20m 10m Ta= −40°C 5m 2m 1m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.6 Output voltage vs. Output current characteristics 3/3 2009.06 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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