MA4GC6772 77 GHz GaAs Multi-Throw PIN Diode Switch Features n n n n n n n n V 4.00 OD-S-1243 77 Ghz Frequency Response 4.0 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Qualified for Automotive Environments Description M/A-COM’s MA4GC6772 is a Gallium Arsenide Monolithic PIN Diode Switch designed for 77 GHz Automotive Applications. This Monolithic Switch performs transmit and receive multiplexing Functionality. Port designations are: 1. 2. 3. 4. 3 Antenna Ports (J1, J2, J3) : Transmit/Receive 1 Source Port (J5) : Main VCO Signal Input 1 L.O. Port (J6) : Offset VCO Signal Output 1 Mixer Port (J4) : Mixer Port Each RF Port contains DC blocking capacitors and a D.C. Bias Network consisting of High Impedance Lines and RF bypass capacitors. This device has 100 um square gold plated bonding pads at all RF and DC ports. RF and DC Ground Backside Gold Plating allows conventional chip bonding techniques using 80Au/20Sn Solder, Indalloy Solder, or electrically conductive silver epoxy. This device is fabricated on OMCVD epitaxial wafers using a process designed for highly repeatable electrical characteristics and extremely low device parasitics. These diodes are fully passivated with Silicon Nitride and have an additional layer of Polymide for scratch and impact protection. This protective coating prevents damage to the junction and circuit during automated or manual assembly. DIM. A B C D E F G H I J K L M N INCHES MIN. MAX. 0.0845 0.0855 0.0688 0.0698 0.0341 0.0351 0.0150 0.0160 0.0106 0.0116 0.0229 0.0239 0.0315 0.0325 0.0538 0.0548 0.0168 0.0178 0.0127 0.0137 0.0142 0.0152 0.0035 0.0043 0.004 REF. 0.004 REF. MILLIMETERS MIN. MAX. 2.148 2.172 1.748 1.772 0.868 0.892 0.383 0.407 0.271 0.295 0.583 0.607 0.802 0.826 1.368 1.392 0.428 0.452 0.324 0.348 0.363 0.387 0.090 0.110 0.100 REF. 0.100 REF. Applications NOTES This device has highly reliable, very low parasitic diodes that allows its use through higher millimeter frequencies for exceptional loss to isolation ratio multi-throw switch performance. 1. BOND PAD MATERIAL: 2.5 µM THICK GOLD 2. HATCHED AREAS INDICATE BOND PADS 3. BACKSIDE METAL: 1.0 µM THICK GOLD Typical Applications include Tranceivers, Automotive Cruise Control Systems, and Radiometry Switch Functions. 77 GHz GaAs Multi-Throw PIN Diode Switch MA4GC6772 V 4.00 Electrical Specifications, TA = + 25 °C Parameters Units Minimum Typical Maximum Specification Specification Specification Forward Voltage, +Vf V 1.15 1.25 Leakage Current, -Ir nA -200 -20 DC Slope Resistance Ω 1.40 Bias Conditions +10 mA per Diode -15 V per Diode 4.8 6.4 +10 mA & 11 mA per Diode Reference Millimeter Wave Data @ F = 77 GHz, TA = + 25 °C Parameters Conditions MA4GC6772 Bias Condition Avg. -5 V +10 mA Comments Insertion Loss J4 to (J1-J3) J5 to (J1-J3) J5 to J6 3.8 dB 4.0 dB 2.0 dB B1, B2, B3, B4 B1, B2, B3, B5 B1, B2, B3, B4 B5 B4 B5 • Receive State • Transmit State • Source to LO Loss Isolation J4 to (J1-J3) J5 to (J1-J3) J1, J2, J3 J5 to J4 24 dB 30 dB 24 dB 35 dB B1, B2, B3, B5 B1, B2, B3, B4 B1, B2, B3, B4 B4 B5 B5 • • • • All Ports 1.5:1 Same as Loss Same as Loss • Low Loss Condition only (Reflective in Isolation Mode) 10% - 90% RF Voltage 2 nS 0 to 5 V TTL 0 to 5 V TTL • Switching Speed is Driver Dependent VSWR Switching Speed Transmit State Receive State At any Switch State Receive State Absolute Maximum Ratings1 Parameter Value Operating Temperature -25 °C to +85 °C Storage Temperature -65 °C to +150 °C D.C. Bias Current +15 mA per Diode D. C. Reverse Voltage -15 Volts @ -10 µA RF C.W. Incident Power Mounting Temperature + 23 dBm C.W. +300 °C for 10 seconds 1. Exceeding any of these values may result in permanent damage M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. 2 n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 77 GHz GaAs Multi-Throw PIN Diode Switch MA4GC6772 V 4.00 Handling Solder Die Attach The following precautions should be observed to avoid damaging these chips: All die attach and bonding methods should be compatible with gold metal. This device utilizes Tungsten metallization under the gold. Solder which does not scavange gold, such as 80 Au/20 Sn or Indalloy #2 is recommended. Do not expose die to a temperature greater than 300 °C for more than 10 seconds. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity Proper ESD techniques should be used when handling these devices. Electrical Conductive Expoxy Die Attach Assembly can be preheated to approximately 125 °C. Use a controlled thickness of approximately 2 mils for best conductivity and lower thermal resistance. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures should be kept below 150 °C General Handling The protective polymer coating on the active areas of these die provides scratch and impact protection, particularly for the metal airbridge which contacts the diode’s anode. Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers. Mounting Techniques These GaAs devices are designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder preform. Ribbon/Wire Bonding Wedge thermocompression bonding may be used to attach ribbons to the bonding pads. Gold ribbons should be ½ x 3 mil sq. for all RF ports (J1-J6) for lowest inductance. Ribbon or Wire bonding is recommended for a1l DC ports, (B1-B5). Use either ½ x 3 mil sq. gold ribbon or 1 mil dia. gold wire. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020