PJRDA200-4 Low Capacitance TVS Diode Array 5 DRAFT SPEC This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. 8 4 SPECIFICATION FEATURES 1 DC Forward Current Max of 200mA Maximum Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O1 1 8 REF2 REF1 2 7 I/O4 REF1 3 6 I/O3 I/O2 4 5 REF2 Maximum Leakage Current of 0.5µA @ 100V Repetitive Peak Inverse Voltage of 200V Industry Standard SMT Package SOIC-8 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE PRODUCT) SOIC-8 APPLICATIONS Set Top Box Input/Output lines LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Symbol Value Units Repetitive Peak Inverse Voltage V RRM 200 V Continuous Reverse Voltage VR 100 V Peak Pulse Current (8/20µs Waveform) I PP 24 A Average Rectified Forward Current, Per Diode I F(AV) 200 mA Power Dissipation, Tj = 85°C, IF = 200mA, Per Diode PD 300 mW Operating Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Soldering Temperature, t max = 10 s TL 260 °C Thermal Resistance, Junction to Ambient R JA 200 °C/W 10/12/2005 Page 1 www.panjit.com PJRDA200-4 ELECTRICAL CHARACTERISTICS Parameter Symbol DRAFT SPEC Repetitive Peak Inverse Voltage V RRM Breakdown Voltage V BR Forward Voltage (8/20µs Pulse) VF Reverse Leakage Current Off-State Junction Capacitance IR CJ Tj = 25°C unless otherwise noted Conditions I BR = 10µA Typ Max Units 200 V 150 V I PP = 1A 0.95 V I PP = 10A 2.0 V V R = 100V 0.5 µA 5 pF 0Vdc Bias, f =1 MHz Between I/O pins and REF2 (Ground) 0Vdc Bias, f =1 MHz Between I/O pins 10/12/2005 Min Page 2 2.2 pF www.panjit.com PJRDA200-4 PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT DRAFT SPEC 10/12/2005 Page 3 www.panjit.com