FAIRCHILD NDS9958

February 1996
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V.
P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
_______________________________________________________________________________
Absolute Maximum Ratings
5
4
6
3
7
2
8
1
T A = 25°C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
20
-20
V
VGSS
Gate-Source Voltage
± 20
± 20
V
ID
Drain Current - Continuous TA = 25°C
A
- Continuous TA = 70°C
- Pulsed
PD
± 3.5
± 3.5
± 2.8
± 2.8
± 14
± 14
TA = 25°C
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ,TSTG
(Note 1a)
(Note 1a)
2
(Note 1a)
(Note 1b)
1
(Note 1c)
0.9
Operating and Storage Temperature Range
W
1.6
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS9958.SAM
Electrical Characteristics (TA= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
N-Ch
20
-20
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
V
VGS = 0 V, ID = -250 µA
P-Ch
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
N-Ch
1
µA
5
µA
P-Ch
-1
µA
TJ = 70°C
VDS = -16 V, VGS = 0 V
-5
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
All
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
All
-100
nA
V
TJ = 70°C
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
N-Ch
TJ = 125°C
P-Ch
VDS = VGS, ID = -250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 3.5 A
1
1.5
3
0.7
1.1
2.2
-1
-2.2
-3
-0.8
-1.9
-2.5
N-Ch
0.062
0.1
0.085
0.14
P-Ch
0.08
0.1
0.11
0.16
N-Ch
0.073
0.12
VGS = -6 V, ID = -3.0 A
P-Ch
0.112
0.12
VGS = 4.5 V, ID = 1.0 A
N-Ch
0.08
0.15
0.165
0.19
TJ = 125°C
VGS = -10 V, ID = -3.5 A
TJ = 125°C
VGS = 6V, ID = 3.0 A
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = -4.5 V, ID = -1.0 A
P-Ch
VGS = 10 V, VDS = 5 V
N-Ch
14
VGS = -10 V, VDS = -5 V
P-Ch
-14
VGS = 4.5 V, VDS = 5 V
N-Ch
3.5
-2.5
Ω
A
VGS = -4.5 V, VDS = -5 V
P-Ch
VDS = 15 V, ID = 3.5 A
N-Ch
7
VDS = -15 V, ID = -3.5 A
P-Ch
5
N-Channel
VDS = 10V, VGS = 0 V,
f = 1.0 MHz
N-Ch
525
P-Ch
785
N-Ch
315
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
P-Ch
500
N-Ch
185
P-Ch
245
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
pF
pF
pF
NDS9958.SAM
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
N-Channel
VDD = 10 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
Min
Typ
Max
Units
N-Ch
6
10
ns
P-Ch
9
40
N-Ch
12
25
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
tr
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
P-Channel
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
Total Gate Charge
Qgs
Qgd
N-Channel
VDS = 10 V,
ID = 3.5 A, VGS = 10 V
Gate-Source Charge
P-Channel
VDS = -10 V,
ID = -3.5 A, VGS = -10 V
Gate-Drain Charge
P-Ch
17
25
N-Ch
22
30
P-Ch
26
30
N-Ch
8
20
P-Ch
13
20
N-Ch
17
30
P-Ch
19
30
N-Ch
1.2
6
P-Ch
3
6
N-Ch
5
12
P-Ch
9
12
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
trr
N-Ch
1.7
P-Ch
-1.7
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 1.7 A
(Note 2)
N-Ch
0.86
1.2
VGS = 0 V, IS = -1.7 A
(Note 2)
P-Ch
-0.9
-1.2
Reverse Recovery Time
VGS = 0V, IF = 3.5 A, dIF / dt = 100 A/µs
N-Ch
100
P-Ch
100
A
V
ns
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t ) =
T J−TA
R θJ A(t )
=
T J−TA
R θJ C+RθCA(t )
= I 2D (t ) × RDS(ON )
TJ
Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9958.SAM
Typical Electrical Characteristics: N-Channel
2
4.0
R DS(on) , NORMALIZED
6.0 5.0
4.5
12
3.5
3.0
6
2.5
I
D
, DRAIN-SOURCE CURRENT (A)
VGS = 10V
0
0
1
2
V DS , DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
18
Figure 1. On-Region Characteristics.
6.0
1
10
0
1.4
4
6
I D , DRAIN CURRENT (A)
8
10
VGS = 10 V
R DS(on) , NORMALIZED
V G S = 10V
1.2
1
0.8
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
V DS = 10V
TJ = -55°C
0
3
6
D
9
12
15
, DRAIN CURRENT (A)
1.2
25
125
Vth , NORMALIZED
6
4
2
2
2.5
3
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-55°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
8
1.5
25°C
1
I
3.5
4
GATE-SOURCE THRESHOLD VOLTAGE
10
TJ = 125°C
1.5
0.5
150
Figure 3. On-Resistance Variation
with Temperature.
1
2
2
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0
1.2
I D = 3.5A
0.6
-50
ID , DRAIN CURRENT (A)
4.5
1.4
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
1.6
0
4.0
1.6
0.8
3
VGS = 3.5V
1.8
V DS = V GS
I D = 250µA
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDS9958.SAM
10
1.15
I D = 250µA
5
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics: N-Channel (continued)
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
V GS = 0 V
2
TJ = 125°C
1
0.5
25°C
0.2
-55°C
0.1
0.05
0.02
0.01
0.2
150
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
10
2000
VGS , GATE-SOURCE VOLTAGE (V)
I D = 3.5A
CAPACITANCE (pF)
1000
C iss
500
300
200
C oss
f = 1 MHz
V GS = 0V
100
0.1
0.2
C rss
0.5
1
2
5
10
20
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
VDS = 10V
8
6
4
2
0
0
4
8
Q g , GATE CHARGE (nC)
12
16
Figure 10. Gate Charge Characteristics.
VDS =10V
10
T J = -55°C
25°C
8
6
125°C
4
2
g
FS
, TRANSCONDUCTANCE (SIEMENS)
12
0
0
2
4
6
8
10
I D , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9958.SAM
Typical Electrical Characteristics: P-Channel
3.5
-20
= -10V
-8.0
VGS = -4.0V -4.5
-7.0
, NORMALIZED
-6.0
-15
-5.5
-10
DS(on)
-5.0
-4.5
R
I D , DRAIN-SOURCE CURRENT (A)
GS
-5
-4.0
0
0
-1
-2
-3
VDS , DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
V
-4
1.5
-6.0
2
-7.0
1.5
-8.0
-10
1
0
-4
-8
-12
I D , DRAIN CURRENT (A)
-16
-20
2
V GS = -10V
, NORMALIZED
1.3
1.2
1.1
DS(on)
1
R
0.9
0.8
0.7
-50
-25
0
25
50
75
100
T J, JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
I D = -3.5A
1.4
V GS = -10V
T J = 125°C
1.5
25°C
1
-55°C
0.5
150
0
-5
-10
-15
-20
I D , DRAIN CURRENT (A)
Figure 15. On-Resistance Variation with Drain
Current and Temperature.
1.1
-10
V DS = -10V
TJ = -55°C
25°C
125°C
V th , NORMALIZED
-8
-6
-4
-2
-1
-2
V
GS
-3
-4
-5
, GATE TO SOURCE VOLTAGE (V)
Figure 16. Drain Current Variation with
Gate Voltage and Temperature.
-6
GATE-SOURCE THRESHOLD VOLTAGE (V)
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE (OHMS)
-5.5
Figure 13. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 14. On-Resistance Variation
with Temperature.
ID , DRAIN CURRENT (A)
-5.0
2.5
0.5
-5
Figure 12. On-Region Characteristics.
0
3
VDS = VGS
1.05
I D = -250µA
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 17. Gate Threshold Variation with
Temperature.
NDS9958.SAM
Typical Electrical Characteristics: P-Channel (continued)
10
1.05
1
0.95
-50
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
-55°C
0.01
0.001
0.3
150
0.6
-V
SD
0.9
1.2
1.5
1.8
, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Body Diode Forward Voltage
Variation with Current and Temperature
-10
1000
C oss
500
300
C rss
0.5
-V
DS
-15V
-6
-4
-2
V
V GS = 0V
-10V
-8
GS
f = 1 MHz
0.2
V DS = -5V
I DS = -3.5A
C iss
, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
25°C
0.1
1500
100
0.1
T J = 125°C
1
0.5
Figure 18. Breakdown Voltage Variation with
Temperature.
200
V GS = 0 V
5
I D = -250µA
-I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
1.1
1
2
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
0
0
5
10
15
20
Q g , GATE CHARGE (nC)
Figure 20. Capacitance Characteristics.
Figure 21. Gate Charge Characteristics
T J = -55°C
V DS = -15V
25°C
6
125°C
4
2
g
FS
, TRANSCONDUCTANCE (SIEMENS)
8
0
0
-3
I
D
-6
-9
, DRAIN CURRENT (A)
-12
-15
Figure 22. Transconductance Variation with Drain
Current and Temperature.
NDS9958.SAM
Typical Electrical Characteristic: N & P-Channel (continued)
20
±I D , DRAIN CURRENT (A)
10
RD
3
S(O
LIM
N)
10
IT
10
1m
s
ms
0m
s
1s
1
10
s
DC
0.3
V
0.1
GS =
±20V
SINGLE PULSE
T A = 25°C
0.03
0.01
0.1
0.2
0.5
1
2
5
10
20
30
± V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 23. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0 .5
D = 0.5
0 .2
0.2
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1c
θ
0.1
0 .1
0.05
0 .0 5
P(pk)
0.02
0 .0 2
0.01
0 .0 1
t1
Single Pulse
0 .0 0 5
t2
TJ - T
= P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
A
0 .0 0 2
0 .0 0 1
0 .0001
0 .001
0 .0 1
0 .1
1
10
100
300
t 1 , TIME (sec)
Figure 24. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
t on
VDD
t d(on)
RL
V IN
R GEN
tr
tf
90%
90%
V OUT
D
VGS
t off
t d(off)
VOUT
10%
10%
DUT
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 25. N or P-Channel
Switching Test Circuit
Figure 26. N or P-Channel
Switching Waveforms
NDS9958.SAM
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
Pin 1
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
2,500
L86Z
F011
D84Z
Rail/Tube
TNR
TNR
95
4,000
500
13" Dia
-
13" Dia
7" Dia
343x64x343
530x130x83
343x64x343
184x187x47
Max qty per Box
5,000
30,000
8,000
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
Reel Size
Box Dimension (mm)
SOIC-8 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
F63TN Label
LOT: CBVK741B019
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
ESD Label
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
10.25
min
5.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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Quiet Series™
SuperSOT™-3
SuperSOT™-6
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E