TOSHIBA SSM6N37CTD

SSM6N37CTD
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37CTD
○ Power Management Switch Applications
Unit: mm
Top View
Ron = 5.60 Ω (max) (@VGS = 1.5 V)
Ron = 4.05 Ω (max) (@VGS = 1.8 V)
Ron = 3.02 Ω (max) (@VGS = 2.5 V)
Ron = 2.20 Ω (max) (@VGS = 4.5 V)
1.0±0.05
0.15±0.03
6
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
DC
ID
250
Pulse
IDP
500
PD (Note 1)
140
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
5
4
2
3
0.05±0.03
Low ON-resistance
0.6±0.02
•
0.9±0.05
1.5V drive
0.2+±0.03 0.4±0.03
•
0.075±0.03
0.35
0.35
±0.02 ±0.02
Drain current
Drain power dissipation
0.38
+0.02
-0.03
0.7±0.03
mA
CST6D
1.Source1
4.Source2
2.Gate1
5.Gate2
3.Drain2
6.Drain1
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-1S1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight : 1.0 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 )
Marking
Pin Condition (top view)
6
5
Equivalent Circuit (top view)
6
4
SU
5
Q1
1
Polarity mark
2
4
Q2
3
Polarity mark (on the top)
1
2
3
*Electrodes: on the bottom
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SSM6N37CTD
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -10 V
12
⎯
⎯
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±1
μA
0.35
⎯
1.0
V
0.14
0.28
⎯
S
ID = 100 mA, VGS = 4.5 V (Note 2)
⎯
1.65
2.20
ID = 50 mA, VGS = 2.5 V
(Note 2)
⎯
2.16
3.02
ID = 20 mA, VGS = 1.8 V
(Note 2)
⎯
2.66
4.05
ID = 10 mA, VGS = 1.5 V
(Note 2)
⎯
3.07
5.60
⎯
12
⎯
⎯
5.5
⎯
⎯
4.1
⎯
Drain-source breakdown voltage
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 100 mA
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
VDD = 10 V, ID = 100 mA
⎯
18
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
36
⎯
ID = -250 mA, VGS = 0 V
⎯
-0.9
-1.2
Drain-source forward voltage
VDSF
(Note 2)
V
Ω
pF
ns
V
Note 2: Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test Circuit
2.5 V
OUT
10 μs
RG
IN
0
(b) VIN
VDD = 10 V
RG = 50 Ω
D.U. ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
2.5 V
0V
(c) VOUT
VDD
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the
SSM6N37CTD). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6N37CTD
(Q1, Q2 Common)
ID – VDS
ID – VGS
500
1000
(mA)
400
4.5 V
2.5 V
100
ID
Ta = 100 °C
300
1.8 V
Drain current
Drain current
ID
(mA)
10 V
1.5 V
200
VGS = 1.2 V
100
0
Common Source
Ta = 25 °C
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
10
1
− 25 °C
25 °C
0.1
Common Source
VDS = 3 V
0.01
0
1.0
1.0
(V)
Gate-source voltage
RDS (ON) – VGS
(V)
Common Source
Common Source
5
4
25 °C
3
Ta = 100 °C
2
− 25 °C
1
0
4
2
6
Gate-source voltage
8
VGS
Ta = 25°C
5
Drain-source ON-resistance
RDS (ON) (Ω)
Drain-source ON-resistance
RDS (ON) (Ω)
VGS
6
ID =100mA
4
1.5 V
1.8 V
3
2.5V
2
VGS = 4.5V
1
0
10
0
(V)
100
200
RDS (ON) – Ta
ID
3
100m A / 4.5 V
1
0
50
Ambient temperature
(mA)
VDS = 3 V
Vth (V)
Gate threshold voltage
50m A / 2.5 V
2
500
Common Source
ID = 10m A / VGS = 1.5 V
20m A / 1.8 V
4
400
Vth – Ta
1.0
Common Source
0
−50
300
Drain current
5
Drain-source ON-resistance
RDS (ON) (Ω)
3.0
RDS (ON) – ID
6
0
2.0
100
Ta
ID = 1 mA
0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
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SSM6N37CTD
IDR – VDS
|Yfs| – ID
1000
1000
(mA)
Common Source
VDS = 3 V
Ta = 25°C
IDR
300
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(mS)
(Q1, Q2 Common)
100
30
10
100
10
1
Drain current
ID
100
25 °C
10
D
1
−25 °C
S
–0.5
–1.0
Drain-source voltage
(mA)
C – VDS
VDS
(ns)
Switching time
Capacitance
C
t
(pF)
50
Ciss
10
Coss
5
Common Source
3
Crss
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage
VDS
tf
100
ton
10
tr
1
100
(V)
(V)
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 50Ω
toff
30
–1.5
t – ID
1000
100
IDR
G
0.1
0
1000
Common Source
VGS = 0 V
Ta =100 °C
1
10
Drain current
100
ID
1000
(mA)
PD* – Ta
Drain power dissipation PD* (mW)
250
Mounted on FR4 board
2
(10mm × 10mm × 1mm, Cu Pad : 100 mm )
200
150
100
50
0
-40
-20
*:Total Rating
0
20
40
60
80
Ambient temperature
100
Ta
120 140
160
(°C)
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SSM6N37CTD
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
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noncompliance with applicable laws and regulations.
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