SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.5V drive • Low ON-resistance: Ron = 72.3mΩ (max) (@VGS = -1.5 V) Ron = 46.2mΩ (max) (@VGS = -1.8 V) Ron = 30.2mΩ (max) (@VGS = -2.5 V) Ron = 22.1mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) −9.5 Pulse IDP (Note 1) −19.0 PD (Note 2) 1 t=10s 2 Drain power dissipation A 1,2,5,6 : Drain 3 : Gate 4 : Source W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability estimated failure rate, etc). JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2T1D Weight : 7.6mg ( typ.) data (i.e. reliability test report and Note 1: The junction temperature should not exceed 150°C during use. 2 Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 K 11 1 2 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 1 2009-04-08 SSM6J409TU Electrical Characteristics (Ta = 25°C) Characteristic Symbol Drain-Source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V ⏐Yfs⏐ VDS = -3 V, ID = -3.0 A (Note 3) 10 20 ⎯ S ID = -3.0 A, VGS = -4.5 V (Note 3) ⎯ 17.8 22.1 ID = -2.0 A, VGS = -2.5 V (Note 3) ⎯ 23.5 30.2 ID = -1.5 A, VGS = -1.8 V (Note 3) ⎯ 31.5 46.2 ID = -0.8 A, VGS = -1.5 V (Note 3) ⎯ 40.0 72.3 ⎯ 1100 ⎯ ⎯ 240 ⎯ ⎯ 180 ⎯ ⎯ 15.0 ⎯ ⎯ 10.9 ⎯ ⎯ 4.1 ⎯ Gate threshold voltage Forward transfer admittance Drain–source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = −10 V, ID = −9.5 A VGS = −4.5 V pF nC Turn-on time ton VDD = -10 V, ID = -2.0 A, ⎯ 40 ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 207 ⎯ ⎯ 0.83 1.2 Drain-Source forward voltage VDSF ID = 9.5 A, VGS = 0 V (Note 3) mΩ ns V Note3: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN ID 0 0V OUT IN −2.5 V 90% −2.5 V RG 10 μs 10% (c) V VDD VDD = − 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDS (ON) VDD 90% 10% tr ton tf toff Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. 2 2009-04-08 SSM6J409TU ID – VDS VGS = -4.5 V ID – VGS -100 -2.5 V Common Source VDS = -3 V -1.8 V -10 (A) -16 -1 ID -1.5 V -12 Drain current Drain current ID (A) -20 -8 -4 -0.1 Ta = 100 °C −25 °C -0.01 25 °C -0.001 0 Common Source Ta = 25 °C 0 -0.2 -0.6 -0.4 Drain–source voltage -0.8 VDS -0.0001 0 -1 -0.5 (V) Gate–source voltage RDS (ON) – VGS Common Source 80 60 40 25 °C Ta = 100 °C 20 0 −25 °C 0 -2 -4 Gate–source voltage -6 VGS Common Source 80 60 40 25 °C Ta = 100 °C 20 −25 °C 0 -2 (V) Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) Ta = 25 °C 60 VGS = -1.5 V -1.8 V -2.5 V -4.5 V 0 -5 -10 Drain current -15 ID -6 VGS -8 (V) RDS (ON) – Ta 60 Common Source 0 -4 Gate–source voltage RDS (ON) – ID 20 (V) ID = -3.0A 100 0 -8 80 40 VGS -2.0 RDS (ON) – VGS ID = -0.8 A 100 -1.5 120 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 120 -1.0 Common Source 50 40 (A) -1.5 A / -1.8 V -2.0 A / -2.5 V 30 20 -3.0 A / -4.5 V 10 0 −50 -20 ID = -0.8 A / VGS = -1.5 V 0 50 100 Ambient temperature Ta 3 150 (°C) 2009-04-08 SSM6J409TU Vth – Ta ID = -1 mA -0.8 (S) VDS = -3 V 50 10 Forward transfer admittance Gate threshold voltage Vth (V) Common Source ⎪Yfs⎪ |Yfs| – ID -1.0 -0.6 -0.4 -0.2 0 −50 50 0 100 Ambient temperature Ta 150 Common Source VDS = -3 V Ta = 25 °C 3 1 0.3 0.1 0.03 0.01 -0.001 -0.01 Drain current (°C) C – VDS 5000 -1 -0.1 -10 ID -100 (A) Dynamic Input Characteristic -8 VGS 1000 Ciss 500 Gate–source voltage Capacitance C (pF) (V) 3000 300 Coss 100 Crss 50 Common Source 30 Ta = 25 °C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain–source voltage VDD = -10 V VDD = -16 V -4 -2 Common Source ID = -9.5 A Ta = 25 °C 0 -100 VDS -6 0 10 Total Gate Charge (V) t – ID 1000 (A) Drain reverse current Switching time ton 1 -0.01 tr Common Source -0.1 Drain current (nC) Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7 Ω -1 -10 ID D IDR Ta = 25 °C 10 IDR 100 t (ns) tf - Qg 30 IDR – VDS 100 toff VGS = 0 V 10 20 G S 1 0. 1 25 °C 0.01 100 °C 0.001 0 0.2 −25 °C 0.4 0.6 Drain–source voltage (A) 4 0.8 VDS 1.0 1.2 (V) 2009-04-08 SSM6J409TU – tw PD – Ta 600 Drain power dissipation PD (W) Transient thermal impedance Rth (°C/W) rth 100 10 Single pulse Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 2.5 2 (s) 10s 1.5 DC 1 0.5 0 -40 1000 Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 mm ) -20 0 20 40 60 80 Ambient temperature 5 100 120 140 Ta (°C) 160 2009-04-08 SSM6J409TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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