TOSHIBA SSM5N15FU

SSM5N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
Small package
•
Low ON resistance : RDS (ON) = 4.0 Ω (max) (@VGS = 4 V)
: RDS (ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
100
Pulse
IDP
200
PD (Note 1)
200
mW
Channel temperature
Tch
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Drain current
Drain power dissipation (Ta = 25°C)
Note:
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
mA
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2L1B
high temperature/current/voltage and the significant change in
Weight: 6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating,
Marking
Equivalent Circuit (top view)
5
4
DP
1
2
5
4
Q1
3
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Test Condition
Min
Typ
Max
Unit
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
30
⎯
⎯
V
IDSS
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.8
⎯
1.5
V
Forward transfer admittance
⎪Yfs⎪
VDS = 3 V, ID = 10 mA
25
⎯
⎯
mS
Drain-Source ON resistance
RDS (ON)
ID = 10 mA, VGS = 4 V
⎯
2.2
4.0
ID = 10 mA, VGS = 2.5 V
⎯
4.0
7.0
⎯
7.8
⎯
pF
⎯
3.6
⎯
pF
⎯
8.8
⎯
pF
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
VDS = 3 V, VGS = 0, f = 1 MHz
Turn-on time
ton
VDD = 5 V, ID = 10 mA,
⎯
50
⎯
Turn-off time
toff
VGS = 0 to 5 V
⎯
180
⎯
Ω
ns
Switching Time Test Circuit
(b) VIN
(a) Test circuit
5V
OUT
5V
90%
0
10 μs
RL
50 Ω
IN
VDD
0V
(c) VOUT
VDD = 5 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
10%
VDD
VDS (ON)
10%
90%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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(Q1, Q2 common)
ID – VDS
ID – VGS
250
1000
Common Source
10
4
3
100
Drain current ID (mA)
Drain current ID (mA)
200
Ta = 25°C
2.7
150
2.5
100
2.3
50
Common
Source
VDS = 3 V
Ta = 100°C
10
−25°C
25°C
1
0.1
VGS = 2.1 V
0
0
0.5
1
1.5
Drain-Source voltage
0.01
0
2
1
VDS (V)
2
3
Gate-Source voltage
RDS (ON) – ID
VGS (V)
RDS (ON) – VGS
10
6
Common Source
Common Source
ID = 10 mA
5
8
Drain-Source ON resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Ta = 25°C
6
VGS = 2.5 V
4
4V
2
4
Ta = 100°C
3
25°C
2
−25°C
1
0
0
40
80
120
160
0
0
200
2
Drain current ID (mA)
4
Common Source
ID = 10 mA
Vth (V)
1.8
6
5
VGS = 2.5 V
4
3
4V
2
1
0
−25
8
10
VGS (V)
Vth – Ta
2
Gate threshold voltage
Drain-Source on resistance
RDS (ON) (Ω)
7
6
Gate-Source voltage
RDS (ON) – Ta
8
4
1.6
Common Source
ID = 0.1 mA
VDS = 3 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100
125
0
−25
150
Ambient temperature Ta (°C)
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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(Q1, Q2 common)
⎪Yfs⎪ – ID
IDR – VDS
1000
250
(mA)
Drain reverse current IDR
Forward transfer admittance
⏐Yfs⏐ (mS)
Common Source
500 V
DS = 3 V
300 Ta = 25°C
100
50
30
10
5
3
1
0
10
100
200
Common Source
VGS = 0 V
Ta = 25°C
D
150
S
100
50
0
0
1000
IDR
G
−0.2
Drain current ID (mA)
−0.4
−0.6
Drain-Source voltage
t – ID
toff
3000
tf
500
300
100
10
0.1
ton
toff
1000
500
tf
300
ton
100
tr
50
30
tr
1
10
10
0.1
100
1
Drain current ID (mA)
10
PD* – Ta
(mW)
Drain power dissipation PD*
(pF)
30
Capacitance C
250
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
50
10
Ciss
Coss
5
3
Crss
1
0.5
0.3
1
Drain-Source voltage
100
Drain current ID (mA)
C – VDS
100
0.1
0.1
−1.4
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
5000
Switching time t (ns)
Switching time t (ns)
3000
30
−1.2
VDS (V)
10000
Common Source
VDD = 5 V
VGS = 0 to 5 V
Ta = 25°C
5000
50
−1
t – ID
10000
1000
−0.8
10
200
150
100
50
0
0
100
20
VDS (V)
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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