TOSHIBA SSM3J304T_10

SSM3J304T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T
○ Power Management Switch Applications
○ High-Speed Switching Applications
•
1.8-V drive
•
Low ON-resistance:
Unit: mm
RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
±8
V
DC
ID
-2.3
Pulse
IDP
-4.6
PD (Note 1)
700
Drain current
Power dissipation
A
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Note 1: Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
3
3
JJ2
1
2
1
2
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2010-01-26
SSM3J304T
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Drain-source breakdown voltage
Min
Typ.
Max
Unit
V (BR) DSS
ID = -1 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +8 V
-12
⎯
⎯
VDS = -20 V, VGS = 0
⎯
⎯
-10
μA
Drain cutoff current
IDSS
Gate leakage current
IGSS
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Switching time
Test Condition
Turn-on time
ton
Turn-off time
toff
Drain-source forward voltage
VDSF
VGS = ±8 V, VDS = 0
V
⎯
⎯
±1
μA
-0.3
⎯
-1.0
V
(Note 2)
2.4
4
⎯
S
ID = -1.0 A, VGS = -4 V
(Note 2)
⎯
88
127
ID = -0.5 A, VGS = -2.5 V
(Note 2)
⎯
120
168
ID = -0.2 A, VGS = -1.8 V
(Note 2)
⎯
172
297
⎯
335
⎯
⎯
70
⎯
⎯
56
⎯
⎯
6.1
⎯
⎯
4.4
⎯
VDS = -3 V, ID = -1 mA
VDS = -3 V, ID = -1 A
VDS = -10 V, VGS = 0, f = 1 MHz
VDS = -16 V, IDS = - 2.3 A,
VGS = - 4 V
⎯
1.7
⎯
VDD = -10 V, ID = -1A,
⎯
20
⎯
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
20
⎯
⎯
0.85
1.2
ID = 2.3 A, VGS = 0
(Note 2)
mΩ
pF
nC
ns
V
Note 2: Pulse test
Switching Time Test Circuit
(a) Test circuit
−2.5 V
OUT
0V
IN
RG
0
(b) VIN
RL
VDD×
VDD = − 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
90%
10%
-2.5 V
(c) VOUT
VDS (ON)
90%
10%
VDD
tf
tr
ton
to
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device. )
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3J304T
ID - VGS
ID - VDS
-5
-10
-10
-4
-4
Common
Common Source
Source
VDS
VDS == -3 V
Common Source
Common Source
Ta = 25
Ta=25°C℃
-2.5
Pulse test
-1
-3
Drain Current ID (A)
Drain Current ID (A)
Pulse test
-1.8
-2
-0.1
25℃
-25℃
Ta = 85℃
-0.01
-1.5
-1
-0.001
VGS = -1.2 V
-0.0001
0
0
-0.2
-0.4
-0.6
-0.8
0
-1
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
RDS (ON) - Ta
RDS (ON) - VGS
300
300
Common
CommonSource
Source
= 25℃
TaTa=25°C
-0.5 A
Common
CommonSource
Source
Pulse test
Pulse test
-1.8 V,-0.2 A
250
Drain-Source ON-Resistance
RDS (ON) (mΩ)
Drain-Source ON-Resistance
RDS (ON) (mΩ)
ID = -1 A
-0.2 A
200
100
200
-2.5 V,-0.5 A
150
100
VGS = -4 V,ID = -1 A
50
0
0
0
1
2
3
4
5
6
7
8
9
-60
10
-35
-10
15
65
90
115
140
Ambient Temperature Ta (℃ )
Gate-Source Voltage VGS (V)
Vth - Ta
RDS (ON) - ID
-1.4
300
CommonSource
Source
Common
Ta = 25℃
Ta=25°C
Pulse test
250
200
-2.5 V
150
-4 V
100
Common Source
ID = -1 mA
VDS = -3 V
-1.2
Gate Threshold Voltage Vth (V)
VGS = -1.8 V
Drain-Source ON-Resistance
RDS (ON) (mΩ)
40
50
-1
-0.8
-0.6
-0.4
-0.2
-0
0
0
-1
-2
-3
-4
-25
-5
0
25
50
75
100
125
150
Ambient Temperature Ta (℃ )
Drain Current ID (A)
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SSM3J304T
|Yfs| - ID
IDR - VDS
10
10
Common
CommonSource
Source
VDS
VDS== -3
-3 V
V
Ta
= 25℃
Ta=25°C
Ta = 85℃
Drain Reverse Current IDR (A)
Pulse test
Forward Transfer Admittance |Yfs| (S)
CommonSource
Source
Common
VGS= =0 0
VGS
Ta=25°C
TaPulse
= 25℃
test
25℃
-25℃
1
25℃
1
-25℃
0.1
Ta = 85℃
0.01
0.001
0.1
-0.01
-0.1
-1
0
-10
0.2
0.4
0.8
1
1.2
1.4
t - ID
C - VDS
1000
1000
Switching Time t (ns)
100
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25℃
10
-0.1
-1
-10
Common
Source
Common
Source
VDD = -10 V
VDD=-10V
VGS
=
0
~
VGS=0 to 2.5V-2.5 V
Ta = 25
Ta=25℃ ℃
toff
Ciss
100
tf
ton
10
tr
1
0.01
-100
0.1
1
10
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Dynamic Input Characteristic
−10
VGS (V)
Common Source
Gate-Source voltage
Capacitance C (pF)
0.6
Drain-Source Voltage VDS (V)
Drain Current ID (A)
ID = −2.3A
−8
Ta = 25°C
−6
VDD=−16V
−4
−2
0
0
2
4
6
8
10
Total Gate Charge
12
Qg
14
16
(nC)
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SSM3J304T
rth
PD – Ta
– tw
1000
b
100
a
Single Pulse
10
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 0.8 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
Power dissipation PD (mW)
Transient thermal impedance rth (°C/W)
1000
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6mm ,
2
Cu Pad : 0.8 mm ×3)
800
a
600
400
b
200
0
-40
1000
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2010-01-26
SSM3J304T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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