TOSHIBA SSM6N37FU

SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N37FU
○ High Speed Switching Applications
○ Analog Switch Applications
•
1.5Vdrive
•
Low ON-resistance
Unit: mm
RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V)
RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V)
RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)
RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
20
V
Gate-Source voltage
VGSS
± 10
V
DC
ID
250
Pulse
IDP
500
Drain current
Power dissipation
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
PD(Note1)
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Using continuously under heavy loads (e.g. the application of
Weight: 6.8 mg(typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6)
0.8 mm
0.4 mm
Marking(top view)
6
5
4
Equivalent Circuit (top view)
6
2
4
Q1
SU
1
5
Q2
3
1
2
3
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2010-08-31
SSM6N37FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -10 V
12
⎯
⎯
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±1
μA
Drain-source breakdown voltage
V
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
⎯
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 100 mA
(Note2)
0.14
0.28
⎯
S
ID = 100 mA, VGS = 4.5 V
(Note2)
⎯
1.65
2.20
ID = 50 mA, VGS = 2.5 V
(Note2)
⎯
2.16
3.02
ID = 20 mA, VGS = 1.8 V
(Note2)
⎯
2.66
4.05
ID = 10 mA, VGS = 1.5 V
(Note2)
⎯
3.07
5.60
⎯
12
⎯
⎯
5.5
⎯
⎯
4.1
⎯
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
VDD = 10 V, ID = 100 mA
⎯
18
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
36
⎯
ID = -250 mA, VGS = 0 V
⎯
-0.9
-1.2
Drain-Source forward voltage
VDSF
(Note2)
Ω
pF
ns
V
Note2: Pulse test
Switching Time Test Circuit
(b) VIN
(a) Test Circuit
2.5 V
OUT
0V
10 μs
RG
IN
VDD = 10 V
RG = 50Ω
Duty ≤ 1%
VIN : tr, tf < 5 ns
Common source
Ta = 25°C
2.5 V
0V
(c) VOUT
VDD
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the
SSM6N37FU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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SSM6N37FU
(Q1, Q2 Common)
ID – VDS
Common Source
Ta = 25 °C
Pulse test
(mA)
10 V
2.5 V
4.5 V
100
Ta = 100 °C
300
ID
400
ID – VGS
1000
1.8 V
Drain current
Drain current
ID
(mA)
500
1.5 V
200
VGS = 1.2 V
100
10
1
− 25 °C
25 °C
0.1
Common Source
VDS = 3 V
Pulse test
0
0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
0.01
0
1.0
1.0
(V)
Gate-source voltage
RDS (ON) – VGS
5
Ta = 100 °C
2
− 25 °C
1
4
2
6
Gate-source voltage
8
VGS
4
1.5 V
2.5V
2
VGS = 4.5V
0
(V)
100
200
Drain current
100m A / 4.5 V
1
50
Ambient temperature
(mA)
VDS = 3 V
Vth (V)
Gate threshold voltage
Drain-source ON-resistance
RDS (ON) (Ω)
3
2
500
Common Source
ID = 10m A / VGS = 1.5 V
20m A / 1.8 V
0
ID
400
Vth – Ta
50m A / 2.5 V
0
−50
300
1.0
Common Source
Pulse test
4
Common Source
Ta = 25°C
Pulse test
1
0
10
1.8 V
3
RDS (ON) – Ta
5
(V)
5
25 °C
3
0
VGS
RDS (ON) – ID
4
0
3.0
6
ID =100mA
Common Source
Pulse test
Drain-source ON-resistance
RDS (ON) (Ω)
Drain-source ON-resistance
RDS (ON) (Ω)
6
2.0
100
Ta
ID = 1 mA
0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2010-08-31
IDR – VDS
|Yfs| – ID
1000
1000
IDR
300
(mA)
Common Source
VDS = 3 V
Ta = 25°C
Pulse test
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(mS)
SSM6N37FU
100
30
10
100
10
1
Drain current
ID
100
25 °C
10
1
S
–0.5
–1.0
Drain-source voltage
(mA)
C – VDS
VDS
(ns)
(pF)
50
t
C
Switching time
Capacitance
Ciss
10
Coss
5
Common Source
3
Crss
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage
VDS
tf
100
ton
10
tr
1
100
(V)
(V)
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 50Ω
toff
30
–1.5
t – ID
1000
100
IDR
G
−25 °C
0.1
0
1000
Common Source
VGS = 0 V
Pulse test
D
Ta =100 °C
1
10
Drain current
100
ID
1000
(mA)
PD – Ta
500
Power dissipation PD (mW)
Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32 mm × 6)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
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SSM6N37FU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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