JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -85 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A ICM Collector current-peak -10 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic 2SB633 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -85 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown votage IE=-5mA; IC=0 -6 V Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 15 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 150 pF VCEsat CONDITIONS hFE-1 classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 320 JMnic Product Specification 2SB633 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB633 Silicon PNP Power Transistors 4