SavantIC Semiconductor Product Specification 2SC1316 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 750 V VCEO Collector-emitter voltage Open base 750 V VEBO Emitter-base voltage Open collector 5 V 2 A 23 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1316 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 750 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A 3.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.2 V ICBO Collector cut-off current VCB=750V;IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=2A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. 4 MAX UNIT 14 8.5 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC1316