ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A FEATURES • Center amplifying gate • High surge current capability RoHS COMPLIANT • Low thermal impedance • High speed performance • Compression bonding • Lead (Pb)-free • Designed and qualified for industrial level TO-209AE (TO-118) TYPICAL APPLICATIONS • Inverters PRODUCT SUMMARY • Choppers IT(AV) 330 A • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 330 A 75 °C 518 IT(RMS) ITSM I2 t 50 Hz 11 000 60 Hz 11 520 50 Hz 605 60 Hz 550 VDRM/VRRM A kA2s 400 to 800 V tq 15 µs TJ - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 ST333S Document Number: 94377 Revision: 30-Apr-08 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 For technical questions, contact: [email protected] www.vishay.com 1 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el 50 Hz 840 ITM 100 µs 180° el 600 1280 UNITS 1040 5430 4350 400 Hz 650 450 1280 910 2150 1560 1000 Hz 430 230 1090 730 1080 720 2500 Hz 140 60 490 250 400 Voltage before turn-on VD 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Case temperature 50 Equivalent values for RC circuit 190 50 Recovery voltage VR 75 10/0.47 50 75 10/0.47 A V A/µs 50 75 °C Ω/µF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 63 °C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t Maximum peak on-state voltage VTM No voltage reapplied UNITS 330 A 75 °C 518 11 000 No voltage reapplied 100 % VRRM reapplied VALUES 11 520 9250 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 9700 605 550 430 6050 ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.92 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 For technical questions, contact: [email protected] kA2s 390 t = 0.1 to 10 ms, no voltage reapplied Low level value of threshold voltage www.vishay.com 2 A kA2√s V mΩ mA Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Vishay High Power Products SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current dI/dt TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt VALUES UNITS 1000 A/µs Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 1.0 Maximum turn-off time tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt = 200 V/µs 15 µs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/µs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp ≤ 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.10 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Mounting torque, ± 10 % Approximate weight Case style Document Number: 94377 Revision: 30-Apr-08 See dimensions - link at the end of datasheet For technical questions, contact: [email protected] K/W TO-209AE (TO-118) www.vishay.com 3 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC ST333SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 80 180° 70 0 50 100 150 200 250 300 350 130 ST333SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Period 100 90 80 30° 90° 120° 180° 60 0 100 200 300 400 DC 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 500 300 R RMS Limit 250 ta el -D 350 /W 1K 0.0 = A hS R t W K/ 400 0. 08 K/ W 0. 12 K/ W 0.1 6K / 0.2 W K/ W W K/ 180° 120° 90° 60° 30° 450 03 0. 06 0. Maximum Average On-state Power Loss (W) 60° 70 0.3 K/ W 200 Conduction Angle 150 100 0.5 K/ W ST333S Series TJ = 125°C 50 0 0 50 100 150 200 250 300 Average On-state Current (A) 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Vishay High Power Products 700 K/ W 0.1 2 300 RMSLimit 0.2 K/ W K/ W R Conduc tion Period 200 ta el -D 400 W K/ K/ W 01 0. 0. 06 = 500 0. 03 SA th DC 180° 120° 90° 60° 30° 600 R Maximum Average On-state Power Loss (W) Inverter Grade Thyristors (Stud Version), 330 A 0.3 K/ W 0. 5 K / W ST333S Series TJ = 125°C 100 0 0 100 200 300 400 500 Average On-state Current (A) 600 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 7000 6000 5000 ST333SSeries TJ = 25°C TJ = 125°C 1000 ST333SSeries 100 4000 1 Peak Half Sine Wave On-state Current (A) 10000 Instantaneous On-state Current (A) 10000 10 0 100 1 2 3 4 5 6 7 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Instantaneous On-state Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics 11000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 10000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 9000 No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 ST333S Series 4000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitve Surge Current Document Number: 94377 Revision: 30-Apr-08 Transient Thermal Impedance Z thJC (K/ W) Peak Half Sine Wave On-state Current (A) Fig. 4 - On-State Power Loss Characteristics 1 Steady State Value R thJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST333S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] www.vishay.com 5 ST333SP Series Vishay High Power Products Inverter Grade Thyristors 320 I TM 300 280 260 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) (Stud Version), 330 A = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST333S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 60 70 80 90 100 180 ITM = 500 A 300 A 200 A 100 A 50 A 160 140 120 100 80 ST333S Series TJ = 125 °C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 1000 1E3 500 400 200 100 50 Hz 1000 1500 2000 2500 50 Hz 400 200 100 1500 Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 3000 1E2 5000 1E2 Snubb er circuit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 2000 2500 3000 ST333SSeries Sinusoidal pulse TC = 50°C tp 1E1 1E1 500 1E3 1E4 1E 4 ST333SSeries Sinusoida l pulse TC = 75°C tp 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 1000 500 100 400 200 500 1500 Snub b er circ uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 1E2 50 Hz 3000 1000 1E2 1E3 1E4 1E4 200 100 50 Hz Snub ber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2000 2500 ST333SSeries Trap ezoidal p ulse TC = 50°C di/ d t = 50A/ µs 1E1 1E1 400 ST333SSeries Tra pezoidal pulse TC = 75°C di/ dt = 50A/µs 3000 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Vishay High Power Products Peak On-state Current (A) 1E4 1E3 400 100 50 Hz 500 500 1000 Snub ber circ uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 1500 2000 1E2 3000 tp 1E1 1E1 1E4 1E4 1E3 ST333SSeries Trapezoidal pulse TC = 75°C di/ dt = 100A/ µs 2500 ST333SSeries Trapezoid al pulse TC = 50°C di/ dt = 100A/ µs tp 100 50 Hz Snub ber c irc uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1000 3000 1E1 1E1 200 400 1500 1E2 200 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Peak On-state Current (A) 1E5 tp ST333SSeries Rectangular pulse d i/ dt = 50A/ µs 20 joules p er pulse 1E4 2 3 5 10 20 joules p er pulse 1 0.5 1E3 2 1 0.4 0.3 0.2 1E2 0.2 ST333SSeries Sinusoidal pulse tp 10 0.5 0.3 1E1 1E1 3 5 1E2 1E3 1E1 1E 1 1E4 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics Rec tangular gate pulse a) Rec ommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST333S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94377 Revision: 30-Apr-08 For technical questions, contact: [email protected] www.vishay.com 7 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A ORDERING INFORMATION TABLE Device code ST 33 3 S 08 P F L 0 P 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dV/dt code (for tq test condition) F = 200 V/µs 8 - tq code (L = 15 µs) 9 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 10 - Lead (Pb)-free Note: For metric device M24 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95080 For technical questions, contact: [email protected] Document Number: 94377 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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