BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 1.2 to 1.4 50 500 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 2 1 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLL6H1214-500 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLL6H1214-500_2 Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage −0.5 +13 V ID drain current - 45 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 °C; PL = 500 W tp = 100 μs; δ = 10 % Typ Unit 0.07 K/W tp = 200 μs; δ = 10 % 0.08 K/W tp = 300 μs; δ = 10 % 0.1 K/W tp = 100 μs; δ = 20 % 0.1 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.3 1.8 2.2 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.7 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 164 mΩ Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions PL output power VDS drain-source voltage Gp RLin PL(1dB) output power at 1 dB gain compression ηD drain efficiency Pdroop(pulse) tr tf Min Typ Max Unit 500 - - W PL = 500 W - - 50 V power gain PL = 500 W 15 17 - dB input return loss PL = 500 W - 10 - dB - 600 - W PL = 500 W 45 50 - % pulse droop power PL = 500 W - 0 0.3 dB rise time PL = 500 W - 20 50 ns fall time PL = 500 W - 6 50 ns 6.1 Ruggedness in class-AB operation The BLL6H1214-500 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 μs; δ = 10 %. BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL GHz Ω Ω 1.2 1.268 − j2.623 2.987 − j1.664 1.3 2.193 − j2.457 2.162 − j1.326 1.4 2.359 − j2.052 1.604 − j1.887 drain ZL gate ZS 001aaf059 Fig 1. BLL6H1214-500_2 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2 RF performance 7.2.1 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 25 °C 001aak751 700 PL (W) 600 001aak752 20 Gp (dB) (1) (2) (3) (4) (5) 15 500 400 10 (1) (2) (3) (4) (5) 300 200 5 100 0 0 0 4 8 12 16 0 100 200 Pi (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1250 MHz (2) f = 1250 MHz (3) f = 1300 MHz (3) f = 1300 MHz (4) f = 1350 MHz (4) f = 1350 MHz (5) f = 1400 MHz (5) f = 1400 MHz Output power as a function of input power; typical values BLL6H1214-500_2 Product data sheet 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz Fig 2. 300 Fig 3. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 001aak753 60 001aak754 20 Gp (dB) ηD (%) 40 ηD (%) ηD 18 (1) (2) (3) (4) (5) 60 50 Gp 16 40 14 30 12 20 20 10 1175 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. 1225 1275 1325 10 1375 1425 f (MHz) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1250 MHz (3) f = 1300 MHz (4) f = 1350 MHz (5) f = 1400 MHz Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Power gain and drain efficiency as function of frequency; typical values 001aak755 0 RLin (dB) −5 −10 −15 −20 −25 1175 1225 1275 1325 1375 1425 f (MHz) PL = 500 W; VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. Fig 6. BLL6H1214-500_2 Product data sheet Input return loss as a function of frequency; typical value All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.2 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 65 °C 001aak756 700 PL (W) 600 001aak757 18 Gp (dB) (1) (2) (3) (1) (2) (3) 500 12 400 300 6 200 100 0 0 0 6 12 18 0 100 200 300 400 500 Pi (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 7. Output power as a function of input power; typical values 001aak758 60 Fig 8. Power gain as a function of load power; typical values 001aak759 20 ηD (%) 18 40 55 ηD Gp (dB) ηD (%) 600 700 PL (W) 45 Gp (1) (2) (3) 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (1) f = 1200 MHz 10 1.15 1.25 5 1.45 1.35 f (GHz) PL = 250 W; VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (2) f = 1300 MHz (3) f = 1400 MHz Fig 9. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet Fig 10. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.3 Performance curves measured with δ = 10 %, tp = 300 μs and f = 1300 MHz 001aal688 700 001aal689 20 PL (W) Gp (dB) 600 18 (1) 500 (2) (3) 16 400 (1) (2) (3) 300 14 200 12 100 0 10 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (1) Ths = −40 °C (2) Ths = 25 °C (2) Ths = 25 °C (3) Ths = 65°C (3) Ths = 65°C Fig 11. Output power as a function of input power; typical values Fig 12. Power gain as a function of load power; typical values 001aal690 60 (1) (2) ηD (%) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 13. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.4 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 25 °C 001aal691 700 001aal692 20 PL (W) Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 14. Output power as a function of input power; typical values 001aal693 60 Fig 15. Power gain as a function of load power; typical values 001aal694 20 Gp (dB) (1) ηD (%) 55 ηD (%) ηD 18 (2) 45 Gp (3) 40 600 700 PL (W) 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 16. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet Fig 17. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.5 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 65 °C 001aal695 700 001aal696 20 PL (W) Gp (dB) 600 18 (1) 500 (2) 16 (3) 400 (1) (2) 300 (3) 14 200 12 100 0 10 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 18. Output power as a function of input power; typical values 001aal697 60 Fig 19. Power gain as a function of load power; typical values 001aal698 20 Gp (dB) ηD (%) 600 700 PL (W) 55 ηD (%) 18 ηD 45 16 Gp 35 (1) 40 (3) (2) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 20. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet Fig 21. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.6 Performance curves measured with δ = 20 %, tp = 500 μs and f = 1300 MHz 001aal699 700 001aal700 20 PL (W) Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (1) Ths = −40 °C (2) Ths = 25 °C (2) Ths = 25 °C (3) Ths = 65°C (3) Ths = 65°C Fig 22. Output power as a function of input power; typical values Fig 23. Power gain as a function of load power; typical values 001aal701 60 ηD (%) (1) (2) 40 (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 24. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.7 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 25 °C 001aal702 700 001aal703 20 PL (W) Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 25. Output power as a function of input power; typical values 001aal704 60 ηD (%) Fig 26. Power gain as a function of load power; typical values 001aal705 20 (1) Gp (dB) (2) 600 700 PL (W) 55 ηD (%) ηD 18 45 Gp (3) 40 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 27. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet Fig 28. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.8 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 65 °C 001aal706 700 001aal707 20 PL (W) Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 29. Output power as a function of input power; typical values 001aal708 60 Fig 30. Power gain as a function of load power; typical values 001aal709 20 Gp (dB) ηD (%) (1) 600 700 PL (W) 55 ηD (%) ηD 18 45 (2) 40 Gp 16 35 (3) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 31. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet Fig 32. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 7.2.9 Performance curves measured with δ = 10 %, tp = 1 ms and f = 1300 MHz 001aal710 700 001aal711 20 PL (W) Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (1) Ths = −40 °C (2) Ths = 25 °C (2) Ths = 25 °C (3) Ths = 65°C (3) Ths = 65°C Fig 33. Output power as a function of input power; typical values Fig 34. Power gain as a function of load power; typical values 001aal712 60 (1) ηD (%) (2) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 35. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 14 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 8. Test information Table 9. List of components For test circuit see Figure 36. Component Description Value C1 multilayer ceramic chip capacitor 22 μF; 35 V C2 multilayer ceramic chip capacitor 51 pF [1] C3, C4 multilayer ceramic chip capacitor 100 pF [1] C5, C11, C12 multilayer ceramic chip capacitor 1 nf [2] C6 multilayer ceramic chip capacitor 47 pF [1] C7, C8, C10 multilayer ceramic chip capacitor 51 pF [3] C9 multilayer ceramic chip capacitor 100 pF [3] C13 electrolytic capacitor 10 μF; 63 V R1 SMD resistor 56 Ω R2 metal film resistor 51 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. Remarks 0603 C12 C10 C1 C3 C2 C4 C5 C8 C9 C11 C13 R1 R2 C6 C7 001aaj490 Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. See Table 9 for a list of components. Fig 36. Component layout for class-AB production test circuit BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 15 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 37. Package outline SOT539A BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 16 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device L-band Long wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL6H1214-500_2 20100401 Product data sheet - BLL6H1214-500_1 Modifications: BLL6H1214-500_1 BLL6H1214-500_2 Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. The status of this data sheet has been changed to “Product data sheet” Added Section 7.2.3 on page 8. Added Section 7.2.4 on page 9. Added Section 7.2.5 on page 10. Added Section 7.2.6 on page 11. Added Section 7.2.7 on page 12. Added Section 7.2.8 on page 13. Added Section 7.2.9 on page 14. 20090120 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 - © NXP B.V. 2010. All rights reserved. 17 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 12. 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Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 18 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLL6H1214-500_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 19 of 20 BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 7.2.3 7.2.4 7.2.5 7.2.6 7.2.7 7.2.8 7.2.9 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 25 °C . . . . . . . . . . . . . . . 5 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 65 °C . . . . . . . . . . . . . . . 7 Performance curves measured with δ = 10 %, tp = 300 μs and f = 1300 MHz. . . . . . . . . . . . . . 8 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 25 °C . . . . . . . . . . . . . . . 9 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 65 °C . . . . . . . . . . . . . . 10 Performance curves measured with δ = 20 %, tp = 500 μs and f = 1300 MHz. . . . . . . . . . . . . 11 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 25 °C . . . . . . . . . . . . . . . . 12 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 65 °C . . . . . . . . . . . . . . . . 13 Performance curves measured with δ = 10 %, tp = 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14 Test information . . . . . . . . . . . . . . . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 April 2010 Document identifier: BLL6H1214-500_2