UV-index sensor based on SiC EryF* Features • Special UV-index sensor, precision up to +/- 0.5 UVI • Optimally suited for accurate sun-UV dosimetry • Also suited for sun tanning bank dosimetry • Silicon Carbide based chip for radiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material • TO-18 metal package with integrated filter glass • 0,054 mm2 active chip area • The chip is manufactured by Cree Research Inc., U.S.A. Eigenschaften • Spezieller UV-Index Sensor mit einer Genauigkeit bis zu +/- 0.5 UVI • Optimale Eignung für präzise Messung des Sonnen-UV • Auch geeignet zur Überwachung von Solarien • Siliziumkarbid-Chip garantiert hohe Strahlungsfestigkeit • Inhärente Unempfindlichkeit gegenüber dem sichtbaren Licht durch das Halbleitermaterial mit hoher Bandlücke • TO-18 Metallgehäuse mit integriertem Filterglas • 0,054 mm2 aktive Chipfläche • Chiphersteller: Cree Research Inc., U.S.A. Rev. 1.4 Page 1 [4] UV-index sensor based on SiC EryF* Maximum Ratings Parameter Symbol Value Unit Topt -25 ... +70 °C VRmax 20 V Symbol Value Unit Active area A 0.054 mm Dark current at 1 V reverse bias Id 1 fA Capacitance C 21 pF Short circuit current at bright sun I0 ca. 7 nA Symbol Value Unit Max. spectral sensitivity Smax 0.11 AW Wavelength of max. spectral sensitivity λSmax 295 nm - 235 - 325 nm Operating temperature range Reverse voltage General Characteristics (Ta = 25 °C) Parameter 2 Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) Rev. 1.4 -1 Page 2 [4] UV-index sensor based on SiC EryF* Linear Spectral Response Logarithmic Spectral Response Rev. 1.4 Page 3 [4] UV-index sensor based on SiC EryF* Application Example Pin Layout Grounded pin: Isolated pin: Rev. 1.4 Anode Cathode Page 4 [4]