KEXIN FZT658

Transistors
SMD Type
NPN Silicon Planar High Voltage Transistor
FZT658
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
400 Volt VCEO
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
Low saturation voltage
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
ICM
1
A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25
Ptot
2
W
Tj:Tstg
-55 to +150
Peak Pulse Current
Operating and Storage Temperature Range
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1
Transistors
SMD Type
FZT658
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ.
Max
Unit
Breakdown Voltage
V(BR)CBO
IC=100ìA
400
V
Breakdown Voltage
V(BR)CEO
IC=10mA*
400
V
Breakdown Voltage
5
V(BR)EBO
IE=100ìA
Collector Cut-Off Current
ICBO
VCB=320V
100
nA
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
Collector-Emitter Saturation Voltage
VCE(sat)
V
IC=20mA, IB=1mA*
0.3
V
IC=50mA, IB=5mA*
0.25
V
IC=100mA, IB=10mA
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA*
0.9
V
Base-Emitter Turn-On Voltage
VBE(on)
IC=100mA, VCE=5V*
1.0
V
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
Switching Times
IC=1mA, VCE=5V*
50
IC=100mA, VCE=5V*
50
IC=200mA, VCE=10V*
40
IC=10mA, VCE=20V,f=20MHz
50
Marking
Marking
FZT658
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MHz
VCB=20V, f=1MHz
10
pF
ton
IC=100mA, VCC=100V
130
ns
toff
IB1=10mA, IB2=-20mA
3300
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
2
Min