ISC 2N6257

Inchange Semiconductor
Product Specification
2N6257
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・Excellent safe operating area
APPLICATIONS
・Designed for audio amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
40
V
VEBO
Emitter-base voltage
Open collector
5
V
20
A
150
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6257
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltge
IC=8A ;IB=0.8A
1.5
V
VCEsat-2
Collector-emitter saturation voltge
IC=20A ;IB=4A
4.0
V
ICEO
Collector cut-off current
VCE=40V; IB=0
1.0
mA
ICEV
Collector cut-off current
VCE=50V; VBE(off)=1.5V
TC=150℃
0.1
5.0
mA
ICBO
Collector cut-off current
VCB=50V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
hFE-2
DC current gain
IC=20A ; VCE=4V
5
Transition frequency
IC=1A;VCE=10V
0.8
fT
CONDITIONS
2
MIN
TYP.
MAX
40
UNIT
V
75
MHz
Inchange Semiconductor
Product Specification
2N6257
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3