2SB1 260 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -5 V Collector cut-off current ICBO VCB=-60V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 µA DC current gain hFE VCE=-3V, IC=-0.1A VCE(sat) Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency 82 390 IC=-500mA,IB=-50mA -0.4 VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-50mA, f=30MHz V 25 pF 100 MHz CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 ZL MARKING １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５