HTSEMI BC869

BC869
TRANSISTOR (PNP)
SOT-89-3L
FEATURES



NPN Complement to BC868
Low Voltage
High Current
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-32
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-32
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-25V,IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
µA
hFE(1)
VCE=-10V, IC=-5mA
50
hFE(2)
VCE=-1V, IC=-0.5A
100
hFE(3)
VCE=-1V, IC=-1A
60
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Base -emitter voltage
VBE
Transition frequency
fT
375
IC=-1A,IB=-0.1A
-0.5
V
VCE=-1V, IC=-1A
-1
V
VCE=-10V, IC=-5mA
VCE=-5V,IC=-10mA, f=100MHz
-0.62
V
MHz
40
CLASSIFICATION OF hFE(2)
RANK
BC869
BC869-16
BC869-25
RANGE
100–375
100–250
160–375
MARKING
CEC
CGC
CHC
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05