2SD874 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation z Mini Power Type Package 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 µA hFE(1) VCE=10V, IC=500mA 85 hFE(2) VCE=5V, IC=1A 50 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA Transition frequency Collector output capacitance 0.4 1.2 VCE=10V,IC=50mA, f=200MHz fT 340 200 20 CLASSIFICATION OF hFE（1） RANK Q R S RANGE 85–170 120–240 170–340 MARKING ZQ ZR ZS １ JinYu semiconductor www.htsemi.com V MHz VCB=10V, IE=0, f=1MHz Cob V pF