2SD0602A TRANSISTOR (NPN) SOT–23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance conditions Min hFE(1) * VCE=10V, IC=0.15A 85 hFE(2) * VCE=10V, IC=0.5A 40 VCE(sat)* IC=0.3A, IB=0.03A fT Cob Typ Max 340 0.6 VCE=10V,IC=0.05A, f=200MHz VCB=10V, IE=0, f=1MHz 200 CLASSIFICATION OF hFE(1) RANK XQ XR XS RANGE 85–170 120–240 170–340 MARKING WQ1 WR1 WS1 JinYu semiconductor www.htsemi.com V MHz 15 *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. １ Unit pF