APTC90H12T1G Full - Bridge Super Junction MOSFET Power Module 4 3 Q1 Q3 5 2 6 VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 Q2 Features • Q4 7 9 8 10 • 11 NTC 12 Pins 3/4 must be shorted together • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Unit V A V mΩ W A August, 2009 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTC90H12T1G – Rev 0 Symbol VDSS APTC90H12T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6.8 0.33 nF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω 20 ns 400 25 1.5 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω mJ 0.75 2.1 mJ 0.85 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 26A IS = - 26A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 200A/µs 0.8 Max 30 23 1.2 Unit A V 920 ns 30 µC August, 2009 trr Test Conditions www.microsemi.com 2–5 APTC90H12T1G – Rev 0 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage APTC90H12T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.50 150 125 100 4.7 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTC90H12T1G – Rev 0 August, 2009 SP1 Package outline (dimensions in mm) APTC90H12T1G Typical performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 925 900 25 limited by RDSon 75 100 125 10 10 ms Single pulse TJ=150°C TC=25°C 25 20 15 10 5 0.1 0 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 1000 Coss 100 10 Crss 1 0 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 50 75 100 125 TC, Case Temperature (°C) 10 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=400V ID=26A TJ=25°C 8 August, 2009 1 C, Capacitance (pF) 50 30 ID, DC Drain Current (A) ID, Drain Current (A) 950 DC Drain Current vs Case Temperature 35 100 µs 1 975 TJ, Junction Temperature (°C) 1000 100 1000 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 4–5 APTC90H12T1G – Rev 0 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APTC90H12T1G ZVS 150 100 ZCS 50 Hard switching 0 10 12.5 15 17.5 20 22.5 25 3.0 2.5 2.0 1.5 1.0 0.5 25 3 100 125 150 4 Switching Energy (mJ) Eon 2 Eoff 1 0 Eon 3 Eoff 2 VDS=600V ID=26A TJ=125°C L=100µH 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 August, 2009 Eon and Eoff (mJ) VDS=600V RG=7.5Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 4 50 TJ, Junction Temperature (°C) ID, Drain Current (A) APTC90H12T1G – Rev 0 Frequency (kHz) VDS=600V D=50% RG=7.5Ω TJ=125°C TC=75°C 200 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 250