BA682, BA683 Vishay Semiconductors Band Switching Diodes FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • AEC-Q101 qualified 94 9371 • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC MECHANICAL DATA and in Case: MiniMELF SOD-80 Weight: approx. 31 mg APPLICATIONS Cathode band color: black • Band switching in VHF-tuners Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE REMARKS BA682 VR = 35 V, rf at IF 3 mA = max. 0.7 Ω BA682-GS18 or BA682-GS08 Tape and reel BA683 VR = 35 V, rf at IF 3 mA = max. 1.2 Ω BA683-GS18 or BA683-GS08 Tape and reel ABSOLUTE MAXIMUM RATINGS (1) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITIONS VR 35 UNIT V Forward continuous current IF 100 mA Note (1) T amb = 25 °C, unless otherwise specified THERMAL CHARACTERISTICS (1) PARAMETER Junction to ambient air TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Junction temperature Storage temperature range Tj 150 °C Tstg - 55 to + 150 °C Note Tamb = 25 °C, unless otherwise specified (1) ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION Forward voltage PART IF = 100 mA Reverse current Diode capacitance SYMBOL MIN. TYP. VF MAX. UNIT 1000 mV VR = 20 V IR 50 nA f = 100 MHz, VR = 1 V CD1 1.5 pF BA682 CD2 1.25 pF BA683 CD2 1.2 pF BA682 rf1 0.7 Ω BA683 rf1 1.2 Ω BA682 rf2 0.5 Ω BA683 rf2 0.9 Ω f = 100 MHz, VR = 3 V f = 200 MHz, IF = 3 mA Dynamic forward resistance f = 200 MHz, IF = 10 mA Note Tamb = 25 °C, unless otherwise specified (1) Document Number: 85530 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BA682, BA683 Band Switching Diodes Vishay Semiconductors 100 3.0 f = 200 MHz Tj = 25 °C CD - Diode Capacitance (pF) rf - Differential Forward Resistance (Ω) TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 BA683 1 BA682 2.0 1.5 BA682 1.0 BA683 0.5 0.1 0 0.1 94 9074 f = 200 MHz Tj = 25 °C 2.5 1 10 0.1 100 IF - Forward Current (mA) Fig. 1 - Dynamic Forward Resistance vs. Forward Current 1 10 100 VR - Reverse Voltage (V) 94 9075 Fig. 2 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 85530 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 2 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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