VISHAY TEMD5110X01

TEMD5110X01
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant, Released for Lead
(Pb)-free Reflow Soldering, AEC-Q101 Released
FEATURES
•
•
•
•
•
Package type: surface mount
Package form: top view
Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
Radiant sensitive area (in mm2): 7.5
Product designed and qualified acc. AEC-Q101
for the automotive market
• High radiant sensitivity
• Daylight blocking filter matched with 870 to 950 nm
emitters
• Fast response times
20535_1
DESCRIPTION
TEMD5110X01 is a high speed and high sensitive PIN
photodiode. It is a miniature surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength 870 nm or 950 nm.
•
•
•
•
Angle of half sensitivity: ϕ = ± 65°
Floor life: 72 h, MSL 4, acc. J-STD-020
Lead (Pb)-free reflow soldering
Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• High speed detector for infrared radiation
• Infrared
remote
control
and
free
air
data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
PRODUCT SUMMARY
COMPONENT
Ira (µA)
ϕ (deg)
λ0.5 (nm)
TEMD5110X01
55
± 65
790 to 1050
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMD5110X01
Tape and reel
MOQ: 1500 pcs, 1500 pcs/reel
Top view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Junction temperature
Soldering temperature
Acc. reflow sloder profile fig. 8
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 84658
Rev. 1.4, 17-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
455
TEMD5110X01
Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
MIN.
TYP.
MAX.
UNIT
1
1.3
V
30
nA
40
pF
IF = 50 mA
VF
IR = 100 µA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
2
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR = 3 V, f = 1 MHz, E = 0
CD
25
Breakdown voltage
Reverse dark current
Diode capacitance
SYMBOL
60
V
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
50
µA
TKIk
0.1
%/K
55
µA
mW/cm2,
λ = 950 nm
Temperature coefficient of Ik
Ee = 1
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
45
Ira
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
λ 0.5
790 to 1050
nm
Range of spectral bandwidth
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
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456
1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 84658
Rev. 1.4, 17-Sep-08
TEMD5110X01
Silicon PIN Photodiode, RoHS Compliant, Released for Vishay Semiconductors
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
1.2
S(λ)rel - Relative Spectral Sensivity
100
10
VR = 5 V
λ= 950 nm
1
0.1
0.01
0.1
1
0.8
0.6
0.4
0.2
0.0
750
10
Ee - Irradiance (mW/cm 2)
12787
1.0
850
Fig. 3 - Reverse Light Current vs. Irradiance
950
0°
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (μA)
0.5 mW/cm 2
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
1
10
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
V R - Reverse Voltage (V)
12788
10°
30°
1 mW/cm 2
0.1
1150
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
100
1
1050
λ - Wavelength (nm)
94 8426
ϕ - Angular Displacement
Ira - Reverse Light Current (μA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Document Number: 84658
Rev. 1.4, 17-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
457
TEMD5110X01
Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.541-5060.01-4
Issue: 3; 05.02.08
Not indicated tolerances ± 0.1
20536
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458
For technical questions, contact: [email protected]
Document Number: 84658
Rev. 1.4, 17-Sep-08
TEMD5110X01
Silicon PIN Photodiode, RoHS Compliant, Released for Vishay Semiconductors
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
TAPING DIMENSIONS in millimeters
20537
REEL DIMENSIONS in millimeters
20874
Document Number: 84658
Rev. 1.4, 17-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
459
TEMD5110X01
Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
200
FLOOR LIFE
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020D
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460
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
For technical questions, contact: [email protected]
Document Number: 84658
Rev. 1.4, 17-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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