Dual P-channel MOSFET ELM34803AA-N ■General description ■Features ELM34803AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 22mΩ (Vgs=-10V) Rds(on) < 34mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Limit -30 Unit V Vgs ±25 -8 -6 V Idm Ias -40 -30 A A Eas 45 mJ Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Avalanche current Avalanche energy L=0.1mH Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj, Tstg Note A 2.00 3 W 1.28 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM34803AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±25V Gate threshold voltage Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous curren Vgs(th) Vds=Vgs, Id=-250μA Vgs=-10V, Id=-9A Rds(on) Vgs=-4.5V, Id=-7A Gfs Vsd Vds=-5V, Id=-9A If=-9A, Vgs=0V -1.0 Ta=25°C Typ. Max. Unit Note V -1 -10 μA ±100 nA -1.5 20 -3.0 22 V 29 34 mΩ 1 -1 S V 1 1 -2 A 20 Is DYNAMIC PARAMETERS Input capacitance Ciss 1480 pF Output capacitance Reverse transfer capacitance Gate resistance Coss Vgs=0V, Vds=-15V, f=1MHz Crss Rg Vgs=0V, Vds=0V, f=1MHz 334 231 2.9 pF pF Ω 30 15 nC nC 2 2 SWITCHING PARAMETERS Total gate charge (10V) Total gate charge (4.5V) Qg Qg Vgs=-10V, Vds=-15V Gate-source charge Gate-drain charge Turn-on delay time Qgs Id=-9A Qgd td(on) 5 6 13 nC nC ns 2 2 2 Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-9A, Rgen=6Ω 8 16 ns ns 2 2 12 40 26 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=-9A, dl/dt=100A/μs If=-9A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Dual P-channel MOSFET Level Enhancement Mode P2003KV ELM34803AA-N NIKO-SEM P-Channel Logic SOP-8 Field Effect Transistor ■Typical electrical and thermal characteristics Output Characteristics VGS = 10V V GS = 7V 25 V G S = 4 .5 V 20 15 10 5 VGS = 3V 0 1 1 .5 -VDS, Drain-To-Source Voltage(V) 2 RDS(ON)ON-Resistance(OHM) 0.06 0.04 0.02 ID = -9A 0 2 4 6 0.06 0.05 8 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0.08 0 0.07 2 .5 On-Resistance VS Gate-To-Source 0.10 RDS(ON)ON-Resistance(OHM) 0 .5 On-Resistance VS Drain Current 0.08 RDS(ON)ON-Resistance(OHM) -ID, Drain-To-Source Current(A) 30 Halogen-Free & Lead-Free 0 5 1.5 RDS(ON) ╳ 1.4 RDS(ON) ╳ 1.3 RDS(ON) ╳ 1.2 RDS(ON) ╳ 1.1 RDS(ON) ╳ 1.0 RDS(ON) ╳ 0.9 RDS(ON) ╳ 0.8 RDS(ON) ╳ 0.7 -50 25 20 15 T j =125° C T j =25° C T j =-20° C 0 1.0 -25 0 25 50 75 100 125 150 Gate charge Characteristics Characteristics 10 -VGS , Gate-To-Source Voltage(V) -ID, Drain-To-Source Current(A) Transfer Characteristics 5 25 TJ , Junction Temperature(˚C) V DS = -15V 10 20 V GS=-10V ID =-9A -VGS, Gate-To-Source Voltage(V) 30 15 On-Resistance VS Temperature RDS(ON) ╳ 10 10 -ID , Drain-To-Source Current 8 ID=-9A V DS=-15V 6 4 2 0 1.5 REV 0.9 2.0 2.5 3.0 3.5 4.0 -VGS, Gate-To-Source Voltage(V) 4.5 0 5.0 3 4-3 5 10 15 20 Qg , Total Gate Charge 25 Sep-21-2009 30 Dual P-channel MOSFET Level Enhancement Mode P2003KV NIKO-SEM P-Channel Logic ELM34803AA-N SOP-8 Halogen-Free & Lead-Free Field Effect Transistor Body Diode Forward Voltage VS Source current Capacitance Characteristic 1.0E+02 -IS , Source Current(A) 2.00E+03 C , Capacitance(pF) 1.60E+03 Ciss 8.00E+02 Coss 0 5 10 15 20 -VDS, Drain-To-Source Voltage(V) 1.0E-03 25 0.0 30 Safe Operating Area 1000 ↓ 70 1 NOTE : 1.V GS= 10V 2.TA=25° C 3.RθJA = 62.5° C/W 4.Single Pulse 0.8 1.0 1.2 Power(W) SINGLE PULSE RθJA = 62.5° C/W TA=25° C 60 50 1m s 40 10m s 100m s 1S 10S DC 30 20 10 0 0.01 1 10 0.0001 100 -VDS, Drain-To-Source Voltage(V) 0.001 0.01 0.1 1 10 Transient Thermal Response Curve 1.00E+01 Transient Thermal Resistance 0.6 80 100us r(t) , Normalized Effective 0.4 Single Pulse Maximum Power Dissipation 90 0.1 0.2 -VSD, Source-To-Drain Voltage(V) 100 Operation in This Area is Lim ite d by RDS(ON) 10 0.1 T J =25 ° C 1.0E-02 1.0E-05 0.00E+00 -ID , Drain Current(A) 1.0E-01 1.0E-04 Crss 100 T J =150° C 1.0E+00 1.20E+03 4.00E+02 1.0E +01 1.00E+00 Duty Cycle=0.5 0.2 Note 0.1 1.00E-01 0.05 0.02 1.00E-02 0.01 1.Duty cycle, D= t1 / t2 2.RthJA = 62.5 ℃ /W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA single Pluse 1.00E-03 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 T1 , Square Wave Pulse Duration[sec] REV 0.9 4 4-4 1.E+00 1.E+01 1.E+02 Sep-21-2009