Single P-channel MOSFET ELM34411AA-N ■General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds -30 V Gate-source voltage Vgs ±25 V Id -12 -9 A Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range -50 2.5 1.3 Pd Tj, Tstg Note A 3 W -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 Pin name SOURCE SOURCE SOURCE 4 5 6 GATE DRAIN DRAIN 7 8 DRAIN DRAIN 4- 1 D G S Single P-channel MOSFET ELM34411AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V,Vgs=0V,Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±25V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) μA ±100 nA -3.0 V A 14 mΩ 18 28 22 mΩ S Gfs Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss Vgs=-10V, Vds=-15V Id=-12A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rgen=6Ω Turn-off fall time -1.5 -1 -10 12 Forward transconductance Qg V Vgs=-10V, Id=-12A Vgs=-4.5V, Id=-9A Vds=-10V, Id=-12A Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -1.0 -50 Ta=25°C Typ. Max. Unit Note tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 -1.2 V 1 -2.1 -4 A A 3 3000 870 pF pF 360 pF 30 1 42 nC 2 9 11 12 nC nC ns 2 2 2 16 50 ns ns 2 2 100 ns 2 Single P-channel MOSFET ELM34411AA-N P-Channel Logic Level Enhancement Modecharacteristics Field Effect Transistor ■Typical electrical and thermal NIKO-SEM P1403EVG SOP-8 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V -Is - Reverse Drain Current(A) 10 T A= 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 3 4- 3 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 JAN-17-2006 NIKO-SEM Single P-channel MOSFET P-Channel ELM34411AA-N Logic Level Enhancement Mode Field Effect Transistor 4 4- 4 P1403EVG SOP-8 Lead-Free JAN-17-2006