BYW98-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 35 ns FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES DO-201AD (Plastic) DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current * IF (AV) Average forward current* IFSM Surge non repetitive forward current Tstg Storage temperature range tp=5 µs F=1KHz Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Value Unit 200 V 110 A 3 A 70 A - 65 to + 150 °C Tj Maximum operating junction temperature 150 °C TL Maximum lead temperature for soldering during 10s at 4mm from case 230 °C * On infinite heatsink with 10mm lead length. October 1999 - Ed: 4C 1/5 BYW98-200 THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction-ambient * Value Unit 25 °C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Test Conditions Min. Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 9A Tj = 100°C IF = 3A Typ. VR = VRRM Tj = 100°C Max. Unit 10 µA 0.5 mA 1.2 V 0.78 0.85 Typ. Max. Unit 35 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equations: 2 P = 0.75 x IF(AV) + 0.04 IF (RMS) RECOVERY CHARACTERISTICS Symbol Min. trr Tj = 25°C VR = 30V IF = 1A dIF/dt = - 50A/µs Qrr Tj = 25°C VR ≤ 30V IF = 3A dIF/dt = - 20A/µs 15 nC tfr Tj = 25°C IF = 3A Measured at 1.1 x VF max dIF/dt = - 50A/µs 20 ns Tj = 25°C dIF/dt = - 50A/µs 5 V VFP 2/5 Test Conditions IF = 3A BYW98-200 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) PF(av)(W) 3.5 3.5 δ = 0.05 3.0 δ = 0.1 δ = 0.2 δ=1 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 2.5 2.0 2.0 1.5 1.5 Rth(j-a)=75°C/W 1.0 1.0 T 0.5 δ=tp/T IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T 0.5 tp 3.5 Fig. 3: Thermal resistance versus lead length. 0.0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu)=35µm). Rth(°C/W) Zth(j-a)/Rth(j-a) 90 1.00 80 δ = 0.5 Rth(j-a) 70 δ = 0.2 60 50 0.10 40 δ = 0.1 Rth(j-l) 30 T 20 Single pulse 10 0 tp(s) Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 70.00 0.01 1E-1 1E+0 1E+1 δ=tp/T tp 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100 F=1MHz Tj=25°C Tj=100°C (Typical values) 10.00 50 Tj=25°C Tj=100°C 1.00 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 20 VR(V) 10 1 10 100 200 3/5 BYW98-200 Fig. 7: Reverse recovery time versus dIF/dt. Fig. 8: Peak reverse recovery current versus dIF/dt. trr(ns) 2.5 100 IF=3A 90% confidence Tj=100°C 80 IRM(A) IF=3A 90% confidence Tj=100°C 2.0 Tj=100°C Tj=100°C 1.5 60 40 1.0 Tj=25°C Tj=25°C 0.5 20 dIF/dt(A/µs) 0 1 10 100 Fig. 9: Dynamic parameters versus junction temperature. % 250 IF=3A dIF/dt=50A/µs VR=30V Qrr 200 IRM 150 100 25 4/5 trr Tj(°C) 50 75 100 125 150 0.0 dIF/dt(A/µs) 1 10 100 BYW98-200 PACKAGE MECHANICAL DATA DO-201AD B A E note 1 B E ØD ØC note 1 ØD note 2 DIMENSIONS REF. Millimeters Min. Max. A B Min. 9.50 25.40 NOTES Inches Max. 0.374 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) 1.000 ∅C 5.30 0.209 ∅D 1.30 0.051 E 1.25 0.049 Ordering code Marking Package Weight Base qty Delivery mode BYW98-200 BYW98-200 DO-201AD 1.16 g. 600 Box BYW98-200RL BYW98-200 DO-201AD 1.16 g. 1900 Tape and reel White band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5