BYW77G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 1&3 25 A 200 V 50 ns 0.85 V 4 4 2 FEATURES AND BENEFITS 3 1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE D2PAK (Plastic) DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D2PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 200 V RMS forward current 50 A IF(AV) Average forward current Tc=125°C δ = 0.5 25 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 200 A IFRM Repetitive peak forward current tp = 5µs f = 5 kHz 310 A Tstg Tj Storage and junction temperature range - 40 to + 150 °C October 1999 - Ed:3A 1/5 BYW77G-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit 1 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current VF ** Pulse test : Test Conditions Forward voltage drop Max. Unit Tj = 25°C 25 µA Tj = 100°C 2.5 mA IF = 20 A Tj = 125°C 0.85 V IF = 40 A Tj = 125°C 1.00 IF = 40 A Tj = 25°C 1.15 VR = VRRM Min. Typ. * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.0075 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time Test Conditions Tj = 25°C Irr = 0.25 A Min. Typ. IF = 0.5A I R = 1A IF = 1A Tj = 25°C dIF/dt = -50A/µs VR = 30V tfr VFP Forward recovery time Tj = 25°C IF = 1A dIF/dt = 100A/µs VFR = 1.1 x VF max Peak forward voltage Tj = 25°C IF = 1A dIF/dt = 100A/µs PIN OUT configuration in D2PAK: 2/5 Max. Unit 35 ns 50 ns 10 V 1.5 BYW77G-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 Fig.2 : Peak current versus form factor. =0.2 =0.1 =0.05 =0.5 T =1 400 IM P=20W =tp/T 300 tp 200 T P=30W 100 I F(av)(A) 5 10 15 =tp/T 20 P=40W tp 25 0 0 30 Fig.3 : Forward voltage drop versus forward current (maximum values). 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) K 1.8 1.6 I M(A) 500 Zth(j-c) (tp. ) K = Rth(j-c) Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 300 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. 300 IM(A) =tp/T tp(s) 0.1 1.0E-02 1.0E-01 tp 1. 0E+00 Fig.6 : Average current versus ambient temperature. (δ = 0.5) 30 IF(av)(A) Rth(j-a)=Rth(j-c) 250 25 200 20 =0.5 Tc=25 oC 150 15 Tc=75 o C 100 =tp/T 10 IM 50 Tc=125 o C 5 t 0.01 0.1 1 0 0 tp Rth(j-a)=15 o C/W t(s) =0.5 0 0.001 T Tamb( o C) 20 40 60 80 100 120 140 160 3/5 BYW77G-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 200 C(pF) Fig.8 : Reverse recovery charges versus dIF/dt. 80 F=1MHz Tj=25 oC 190 70 180 160 50 150 140 40 IF=IF(av) Tj=100 OC Tj=25 O C 30 130 20 120 110 10 VR(V) 100 1 10 100 200 Fig.9 : Peak reverse current versus dIF/dt. dIF/dt(A/µs) 0 1 10 1 00 Fig.10 : Dynamic parameters versus junction temperature. IRM(A) QRR;IRM[Tj]/QRR;IRM[Tj=125oC] 1.50 90%CONFIDENCE 2.5 90%CONFIDENCE 60 170 3.0 QRR(nC) IF=IF(av) 1.25 Tj=100 OC 2.0 1.00 1.5 0.75 1.0 0.50 IRM QRR Tj=25 OC 0.5 0.0 1 4/5 0.25 dIF/dt(A/µs) 20 10 1 00 0.00 0 Tj( oC) 25 50 75 100 125 150 BYW77G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E C2 L2 D L L3 A1 B2 B R C G A2 2.0 MIN. FLAT ZONE V2 A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° FOOT PRINT (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5