AOSMD AO3160

AO3160
600V,0.04A N-Channel MOSFET
General Description
Product Summary
The AO3160 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
Top View
VDS
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ID (at VGS=10V)
0.04A
RDS(ON) (at VGS=10V)
< 500Ω
RDS(ON) (at VGS=4.5V)
< 600Ω
SOT23A
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
CurrentA,F
B
Pulsed Drain Current
Peak diode recovery dv/dt
TA=25°C
Power Dissipation A
IDM
dv/dt
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev1: April 2012
Steady-State
Steady-State
±20
V
0.03
A
0.12
5
1.39
V/ns
W
0.89
TJ, TSTG
Symbol
t ≤ 10s
Units
V
0.04
ID
TA=70°C
Maximum
600
RθJA
RθJL
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-50 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3160
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
-
-
-
700
-
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=8µA
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
gFS
VSD
IS
ISM
RDS(ON)
ID=250µA, VGS=0V
-
0.64
VDS=600V, VGS=0V
-
VDS=480V, TJ=125°C
-
V
o
-
V/ C
-
1
-
10
µA
-
-
±100
1.4
2
3.2
nΑ
V
VGS=10V, ID=0.016A
-
232
500
Ω
VGS=4.5V, ID=0.016A
-
315
600
Ω
Forward Transconductance
VDS=40V, ID=0.016A
-
0.024
-
S
Diode Forward Voltage
IS=0.016A,VGS=0V
-
0.74
1
V
Maximum Body-Diode Continuous Current
-
-
0.04
A
Maximum Body-Diode Pulsed Current
-
-
0.12
A
-
10
15
pF
-
1.8
3
pF
-
0.7
1
pF
5
10
15
Ω
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
-
1
1.5
nC
-
0.1
0.15
nC
Gate Drain Charge
-
0.52
0.8
nC
tD(on)
Turn-On DelayTime
-
4
12
ns
tr
Turn-On Rise Time
-
5.2
8
ns
tD(off)
Turn-Off DelayTime
-
12.5
19
ns
tf
trr
Turn-Off Fall Time
-
55
82.5
ns
IF=0.016A,dI/dt=100A/µs,VDS=300V
-
105
160
Qrr
Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V
-
9.5
14.3
ns
nC
Qgs
Gate Source Charge
Qgd
Body Diode Reverse Recovery Time
VGS=10V, VDS=400V, ID=0.01A
VGS=10V, VDS=300V, ID=0.01A,
RG=6Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: April 2012
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Page 2 of 5
AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.04
0.025
10V
0.035
VDS=40V
0.02
0.03
5V
0.015
4.5V
0.02
ID(A)
ID (A)
0.025
25°C
0.01
0.015
4V
0.01
0.005
VGS=3.5
0.005
0
0
0
2
4
6
8
10
0
1
VDS (Volts)
Fig 1: On-Region Characteristics
800
3
4
5
Normalized On-Resistance
2.5
600
RDS(ON) (Ω
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=4.5V
400
200
VGS=10V
0
2
VGS=4.5V
ID=0.016A
1.5
VGS=10V
ID=0.016A
1
0.5
0
0.01
0.02
0.03
0.04
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.0E+00
40
1.0E-01
1.1
1
IS (A)
BVDSS (Normalized)
ID=30A
125°
0.9
125°C
1.0E-02
1.0E-03
25°C
25°
0.8
1.0E-04
-100
Rev1: April 2012
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.00
10
10.00
Capacitance (pF)
VGS (Volts)
Ciss
VDS=400V
ID=0.01A
8
6
4
Coss
1.00
Crss
0.10
2
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1.2
0.1
1
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
120
100µs
100
1ms
80
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
0.01
10ms
0.1s
1s
10s
DC
Power (W)
0.1
ID (Amps)
100
60
40
0.001
TJ(Max)=150°C
TA=25°C
20
0.0001
0
1
10
100
1000
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev1: April 2012
www.aosmd.com
Page 4 of 5
AO3160
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev1: April 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 5 of 5