DYNEX DSF21545SV_04

DSF21545SV
DSF21545SV
Fast Recovery Diode
Replaces January 2000 version, DS4153-4.0
DS4153-5.0 June 2004
APPLICATIONS
■ The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.
FEATURES
KEY PARAMETERS
VRRM
4500V
IF(AV)
3230A
IFSM
20000A
Qr
1800µC
trr
7.0µs
■ The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.
■ Low recovered charge for low losses.
■ DSF21545SV is housed in a similar outline to that of the
DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.
VOLTAGE RATINGS
Type Number
DSF21545SV45
Repetitive Peak
Reverse Voltage
VRRM
V
4500
Conditions
VRSM = VRRM + 100V
Outline type code: V.
See Package Details for further information.
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF21545SV45
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF21545SV
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
3230
A
IF(RMS)
RMS value
Tcase = 65oC
5080
A
Continuous (direct) forward current
Tcase = 65oC
4680
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
2070
A
IF(RMS)
RMS value
Tcase = 65oC
3255
A
Continuous (direct) forward current
Tcase = 65oC
2875
A
IF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Surge (non-repetitive) forward current
Max.
Units
20
kA
2.0 x 106
A2s
16
kA
1.28 x 106
A2s
-
kA
-
A2s
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 150oC
I2t for fusing
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
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DSF21545SV
THERMAL AND MECHANICAL DATA
Double side cooled
Rth(j-c)
Min.
Max.
dc
-
0.0075
o
Anode dc
-
0.015
o
Cathode dc
-
0.015
o
C/W
Double side
-
0.002
o
C/W
Single side
-
0.004
o
C/W
-
150
o
o
Conditions
Parameter
Symbol
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 35.0kN
with mounting compound
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
Clamping force
34
48
kN
Typ.
Max.
Units
-
On-state (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
Parameter
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
2.0
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
150
mA
7.0
-
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1800
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
500
A
K
Soft factor
2
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.25
V
rT
Slope resistance
At Tvj = 150oC
-
0.25
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
75
V
VFRM
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DSF21545SV
CURVES
5000
500
Measured under
pulse conditions
400
Instantaneous forward current IF - (A)
4000
Instantaneous forward current IF - (A)
Measured under
pulse conditions
3000
2000
Tj = 25˚C
Tj = 150˚C
1000
300
Tj = 150˚C
Tj = 25˚C
200
100
0
0
1.0
2.0
3.0
Instantaneous forward voltage VF - (V)
0
0
4.0
Fig.2 Maximum (limit) forward characteristics
0.5
1.0
1.5
Instantaneous forward voltage VF - (V)
Fig.3 Maximum (limit) forward characteristics
200
10000
Conditions:
Tj = 150˚C,
VR = 100V
Current
waveform
VFR
δy
di = δy
dt δx
Reverse recovered charge Qrr - (µC)
Voltage
waveform
150
Transient forward votage VFP - (V)
2.0
Tj = 125˚C limit
δx
100
Tj = 25˚C limit
50
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
1000
IF = 100A
IF
50µs
QS =
0
QS
tp = 1ms
dIR/dt
0
500
1000
1500
2000
2500
Rate of rise of forward current dIF/dt - (A/µs)
3000
Fig.4 Transient forward voltage vs rate of rise of
forward current
100
1
IRR
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Recovered charge
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DSF21545SV
Conditions:
Tj = 150 ˚C,
VR = 100V
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
1000
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.6 Typical reverse recovery current vs rate of rise of
forward current
0.01
d.c.Double side cooled
Thermal impedance - junction to case, Zth(j-c) - ˚C/W
Reverse recovery current Irr - (A)
10000
0.001
0.0001
0.001
0.01
0.1
1.0
Time - (s)
10
100
Fig.7 Maximum (limit) transient thermal impedance junction to case - (˚C/W)
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DSF21545SV
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
27.0
25.4
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN ±10%
Package outline type code: V
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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