ZXMP6A17DN8 - Diodes Incorporated

A Product Line of
Diodes Incorporated
ZXMP6A17DN8
ADVANCE INFORMATION
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features
RDS(on) Max
125mΩ @ VGS = -10V
190mΩ @ VGS = -4.5V
-60V
ID
TA = 25°C
(Notes 7 & 9)
-3.4A
-2.8A
Description
This MOSFET has been designed to minimize the on-state resistance

Low On-Resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Low Profile SOIC Package

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP capable (Note 4)
and yet maintain superior switching performance, making it ideal for
Mechanical Data
high efficiency power management applications.

Case: SO-8
Applications


DC-DC Converters

Moisture Sensitivity: Level 1 per J-STD-020

Power Management functions


Disconnect Switches
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208 e3

Motor Control

Weight: 0.074 grams (approximate)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
SO-8
S1
D1
G1
D1
S2
D2
G2
D2
Top View
D1
G1
Top View
D2
G2
S1
S2
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Product
ZXMP6A17DN8TA
ZXMP6A17DN8QTC
Notes:
Compliance
AEC-Q101
Automotive
Marking
ZXMP6A17D
ZXMP6A17D
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
500
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMP6A17D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
1 of 8
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A Product Line of
Diodes Incorporated
ZXMP6A17DN8
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source voltage
Characteristic
VDSS
-60
V
Gate-Source voltage
VGS
20
V
(Notes 7 & 9)
Continuous Drain current
VGS = 10V
Unit
-3.42
TA = +70ºC
(Notes 7 & 9)
ID
-2.73
IDM
A
(Notes 6 & 9)
-2.7
Pulsed Drain current
(Notes 8 & 9)
-15.6
Continuous Source current (Body diode)
(Notes 7 & 9)
IS
-3.4
A
Pulsed Source current (Body diode)
(Notes 8 & 9)
ISM
-15.6
A
Value
1.25
10.0
1.81
14.5
2.15
17
100
70
Unit
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Notes 6 & 9)
Power dissipation
Linear derating factor
(Notes 6 & 10)
PD
(Notes 7 & 9)
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
(Notes 6 & 10)
RθJA
(Notes 7 & 9)
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Notes 9 & 11)
60
RθJL
51.68
TJ, TSTG
-55 to 150
W
mW/°C
°C/W
°C
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t  10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
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ZXMP6A17DN8
1.6
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on)
10 Limited
1
DC
1s
100m
100ms
10m
10ms
Single Pulse
T amb=25°C
1m
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
70
T amb=25°C
60
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100 120 140 160
100
1k
Single Pulse
T amb=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS33588 Rev 4 - 2
80
100
Pulse Width (s)
ZXMP6A17DN8
60
Derating Curve
Maximum Power (W)
80
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics
Pulse Power Dissipation
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ZXMP6A17DN8
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-60


V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS


-0.5
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS


100
nA
VGS = 20V, VDS = 0V
VGS(th)
-1.0


V
ID = -250µA, VDS = VGS
ON CHARACTERISTICS
Gate Threshold Voltage
0.125
Static Drain-Source On-Resistance (Note 12)
RDS(ON)


Forward Transconductance (Notes 12 & 13)
gfs

4.7

Diode Forward Voltage (Note 12)
VSD

-0.85
Reverse recovery time (Note 13)
trr

25.1
Reverse recovery charge (Note 13)
Qrr

27.2
Input Capacitance
Ciss

637

pF
Output Capacitance
Coss

70

pF
Reverse Transfer Capacitance
Crss

53

pF
Total Gate Charge (Note 14)
Qg

9.0

nC
Total Gate Charge (Note 14)
Qg

17.7

nC
Gate-Source Charge (Note 14)
Qgs

1.6

nC
Gate-Drain Charge (Note 14)
Qgd

4.4

nC
Turn-On Delay Time (Note 14)
tD(on)

2.6

ns
Turn-On Rise Time (Note 14)
tr

3.4

ns
Turn-Off Delay Time (Note 14)
tD(off)

26.2

ns
tf

11.3

ns
0.190
Ω
VGS = -10V, ID = -2.3A
VGS = -4.5V, ID = -1.9A
S
VDS = -15V, ID = -2.3A
-0.95
V
IS = -2.0A, VGS = 0V

ns

nC
IS = -1.7A, di/dt = 100A/µs
DYNAMIC CHARACTERISTICS (Note 13)
Turn-Off Fall Time (Note 14)
Notes:
VDS = -30V, VGS = 0V
f = 1MHz
VGS = -4.5V
VGS = -10V
VDS = -30V
ID = -2.2A
VDD = -30V, VGS = -10V
ID = -1A, RG  6.0Ω
12. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
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ZXMP6A17DN8
10V
10
4V
3.5V
3V
1
2.5V
4.5V
3.5V
3V
2.5V
10
2V
0.1
5V
10V
T = 150°C
5V
-ID Drain Current (A)
-ID Drain Current (A)
T = 25°C
-VGS
0.01
1
2V
-VGS
0.1
1.5V
0.01
0.1
1
0.1
10
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
1.8
-ID Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
-VDS = 10V
1
2
3
VGS = -10V
1.6
ID = - 2.3A
RDS(on)
1.4
1.2
1.0
ID = -250uA
0.6
4
-50
2.5V
3V
3.5V
4V
5V
0.1
10V
T = 25°C
0.01
0.1
1
-ID Drain Current (A)
10
On-Resistance v Drain Current
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
-ISD Reverse Drain Current (A)
-VGS
1
50
100
150
Normalised Curves v Temperature
2V
10
0
Tj Junction Temperature (°C)
Typical Transfer Characteristics
100
VGS(th)
VGS = VDS
0.8
-VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance 
ADVANCE INFORMATION
Typical Characteristics
10
T = 150°C
1
T = 25°C
0.1
VGS= 0V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMP6A17DN8
1000
f = 1MHz
800
600
CISS
COSS
400
CRSS
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-VGS Gate-Source Voltage (V)
10
VGS = 0V
C Capacitance (pF)
ADVANCE INFORMATION
Typical Characteristics – (cont.)
8
6
4
ID = -2.3A
2
VDS = -30V
0
0
2
4
6
8
10
12
Q - Charge (nC)
14
16
18
Gate-Source Voltage v Gate Charge
Test Circuits
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
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ZXMP6A17DN8
0.254
ADVANCE INFORMATION
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
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Document Number DS33588 Rev 4 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
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