2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE(sat) < -1V @ -4A Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Complementary NPN Type: 2DD2098 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT89 Case: SOT89 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (approximate) C E B C C B E Device Symbol Top View Pin Out – Top View Ordering Information (Note 4) Part Number 2DB1386Q-13 2DB1386Q-13R 2DB1386R-13 Notes: Marking KP3Q KP3Q KP3R Reel size (inches) 13 13 13 Tape width (mm) 12 12 12 Quantity per reel 2,500 4,000 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information YWW KP3x 2DB1386Q/R Document number: DS31147 Rev. 7 - 2 KP3x = Product Type Marking Code, where: KP3Q = 2DB1386Q KP3R = 2DB1386R YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53) 1 of 6 www.diodes.com February 2013 © Diodes Incorporated 2DB1386Q/R Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -30 -20 -6 -5 -10 -500 Unit V V V A A mA Value 1 125 19 -55 to +150 Unit W °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range Notes: Symbol PD RJA RθJL TJ, TSTG 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in steady state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 1.0 Thermal Resistance (°C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 Temperature (°C) 120 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 100 Single Pulse. T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2DB1386Q/R Document number: DS31147 Rev. 7 - 2 2 of 6 www.diodes.com February 2013 © Diodes Incorporated 2DB1386Q/R Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 7) Collector-Emitter Saturation Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO -30 -20 -6 -0.5 -0.5 V V V A A IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCB = -20V, IE = 0 VEB = -5V, IC = 0 VCE(SAT) 120 180 -0.25 -1.0 270 390 V IC = -4A, IB = -0.1A IC = -0.5A, VCE = -2V Cobo 55 pF fT 100 MHz VCB = -20V, IE = 0, f = 1MHz VCE = -6V, IE = 50mA, f = 30MHz 2DB1386Q 2DB1386R DC Current Gain hFE SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: Conditions 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 2.0 400 TA = 150°C 1.8 VCE = -2V -IC, COLLECTOR CURRENT (A) 350 hFE, DC CURRENT GAIN 300 TA = 85°C 250 200 TA = 25°C 150 100 TA = -55°C 50 0 0.001 1.4 2DB1386Q/R Document number: DS31147 Rev. 7 - 2 IB = -8mA 1.2 1.0 IB = -6mA 0.8 0.6 IB = -4mA 0.4 0.2 0.01 0.1 1 -IC, COLLECTOR CURRENT (A) Figure 1 Typical DC Current Gain vs. Collector Current (2DB1386Q) IB = -10mA 1.6 IB = -2mA 0 10 -VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage 3 of 6 www.diodes.com February 2013 © Diodes Incorporated 2DB1386Q/R Typical Electrical Characteristics (cont.) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) -VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.4 IC/IB = 40 0.3 0.2 TA = 150°C T A = 85°C 0.1 TA = 25°C T A = -55°C 0 0.0001 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C 0.2 T A = 150°C 0 0.0001 1,000 1.2 1.0 Cob, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE EMITTER SATURATION VOLTAGE(V) VCE = -2V 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.8 TA = -55°C 0.6 100 T A = 25°C 0.4 T A = 85°C 0.2 1.2 TA = 150°C IC/IB = 40 0 0.0001 0.001 0.01 0.1 1 10 10 IC, COLLECTOR CURRENT (A) Figure 5 Typical Base-Emitter Saturation Voltage vs. Collector Current VR, REVERSE VOLTAGE (V) Figure 6 Typical Output Capacitance Characteristics 120 fT, GAIN-BANDWIDTH PRODUCT 100 80 60 40 VCE = -6V f = 30MHz 20 0 0 20 40 60 80 100 120 -IC, COLLECTOR CURRENT Figure 7 Typical Gain-Bandwidth Product vs. Collector Current 2DB1386Q/R Document number: DS31147 Rev. 7 - 2 4 of 6 www.diodes.com February 2013 © Diodes Incorporated 2DB1386Q/R Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D1 0 .20 R0 C 1 H H E B1 L B e 8° (4X) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 e 1.50 Typ H 3.94 4.25 H1 2.63 2.93 L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) 2DB1386Q/R Document number: DS31147 Rev. 7 - 2 5 of 6 www.diodes.com February 2013 © Diodes Incorporated 2DB1386Q/R IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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