AOK75B60D1 600V,75A Alpha IGBT TM with Diode General Description Product Summary • AlphaIGBT (α IGBT) technology • Low VCE(SAT) enables high efficiencies • Smooth Switching waveforms reduce EMI • Better thermal management • Minimal gate spike under high dV/dt VCE IC (TC=100°C) 600V 75A VCE(sat) (TJ=25°C) 1.72V Applications • Welding Machines • Solar Inverters • Uninterruptible Power Supplies Top View TO-247 C G C AOK75B60D1 E E G Orderable Part Number Package Type AOK75B60D1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Form Minimum Order Quantity Tube 240 AOK75B60D1 600 Units V ±20 V Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax I CM 290 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 290 A Continuous Diode Forward Current TC=25°C TC=100°C 150 IC 75 75 IF 37.5 A A Diode Pulsed Current, Limited by TJmax I FM 290 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=150°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.1.0: May 2014 PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 500 200 W -55 to 150 °C 300 °C AOK75B60D1 40 0.25 Units °C/W °C/W 0.95 °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter V CE(sat) IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=75A Collector-Emitter Saturation Voltage VF Diode Forward Voltage VGE=0V, IC=37.5A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Min Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Typ Max Units V 600 - - TJ=25°C - 1.72 2.1 TJ=125°C - 2 - TJ=150°C - 2.1 - TJ=25°C - 1.44 2 TJ=125°C - 1.43 TJ=150°C - 1.41 - 5.35 - TJ=25°C - - 10 TJ=125°C - - 1250 TJ=150°C - - 6250 V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=75A - 36 - S - 4750 - pF - 470 - pF DYNAMIC PARAMETERS Input Capacitance C ies VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 16 - pF Qg Total Gate Charge - 118 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=75A - 48 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 36 - nC - 290 - A - 1.5 - Ω t D(on) Turn-On DelayTime - 33 - ns tr Turn-On Rise Time - 69 - ns - 84 - ns - 18.4 - ns - 3.7 - mJ Q gc t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy TJ=25°C VGE=15V, VCE=400V, IC=75A, RG=4Ω, Parasitic Ιnductance=150nH E off Turn-Off Energy - 1.3 - mJ E total t rr Total Switching Energy - 5 - mJ - 147 - Q rr Diode Reverse Recovery Charge - 0.9 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 10 - A t D(on) Turn-On DelayTime - 30 - ns tr Turn-On Rise Time - 75 - ns t D(off) Turn-Off Delay Time - 105 - ns tf Turn-Off Fall Time - 16 - ns E on Turn-On Energy - 4.2 - mJ E off Turn-Off Energy - 1.9 - mJ E total t rr Total Switching Energy - 6.1 - mJ - 235 - Q rr Diode Reverse Recovery Charge - 1.9 - ns µC I rm Diode Peak Reverse Recovery Current - 15 - A Diode Reverse Recovery Time TJ=25°C IF=37.5A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=75A, RG=4Ω, Parasitic Inductance=150nH Diode Reverse Recovery Time TJ=150°C IF=37.5A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2014 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 180 20V 17V 15V 150 13V 17V 150 15V 13V 120 IC (A) 120 IC (A) 20V 11V 90 60 11V 90 9V 60 9V 30 30 VGE=7V VGE= 7V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 100 100 80 80 60 60 -40°C IF (A) IC (A) VCE=20V 40 40 150°C 25°C 25°C 20 150°C 20 -40°C 0 0 4 7 10 13 0.5 16 VGE(V) Fig 3: Transfer Characteristic 1.5 2.0 2.5 VF (V) Fig 4: Diode Characteristic 7 5 4 6 IC=150A VGE(TH)(V) VCE(sat) (V) 1.0 3 IC=75A 5 4 2 1 3 IC=37.5A 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: May 2014 www.aosmd.com 0 30 60 90 120 150 TJ (°C) Figure 6: VGE(TH) vs. Tj Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=75A 12 Cies 9 Capacitance (pF) VGE(V) 1000 6 3 Coes 100 Cres 10 0 1 0 20 40 60 80 100 120 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 500 Power Disspation (W) 400 300 200 100 0 25 50 75 100 125 150 TCASE(°C) Fig 10: Power Disspation as a Function of Case 160 Current rating IC(A) 120 80 40 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating Rev.1.0: May 2014 www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 Tr 100 10 1 1 0 40 80 120 160 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=4Ω Ω) 1000 Switching Time (nS) Td(on) 1000 0 10 20 30 40 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=75A) 50 Td(off) Tf Td(on) Tr 100 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=75A,Rg=4Ω Ω) Rev.1.0: May 2014 200 www.aosmd.com Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 15 Eoff Eoff Switching Energy (mJ) 20 SwitchIng Energy (mJ) Eon Eon Etotal 15 10 5 12 Etotal 9 6 3 0 0 0 40 80 120 IC (A) Figure 15: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=4Ω Ω) 160 0 10 10 30 40 Rg (Ω Ω) Figure 16: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=75A) 50 10 Eoff Eoff Eon 8 Eon 8 Switching Energ y (mJ) Etotal Switching Energy (mJ) 20 6 4 2 0 Etotal 6 4 2 0 0 25 75 100 125 150 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=75A,Rg=4Ω Ω) Rev.1.0: May 2014 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=75A,Rg=4Ω Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2 75A 1.E-04 1.6 VSD (V) 37.5A 1.2 1.E-06 5A VCE=400V 0.8 1.E-07 1.E-08 IF=1A 0.4 0 25 50 75 100 125 150 175 0 Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 25 50 100 6 40 Irm(A) 1000 Trr (nS) 60 4 150 3 25°C 150°C 100 25°C 20 150°C 50 Irm 2 1 S 25°C 25°C 60 5 200 1500 40 175 Trr Qrr 20 150 250 80 0 125 150°C 2000 0 100 300 150°C 500 75 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature 2500 Qrr (nC) 13V S ICE(S) (A) VCE=600V 1.E-05 0 80 0 100 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 3000 0 0 120 20 40 60 80 100 IS (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 250 10 200 8 150°C 100 Qrr (nC) 1500 60 25°C 150 6 Trr 100 150°C 1000 150°C 80 Trr (nS) Qrr 2000 Irm(A) 2500 4 S 40 25°C 500 20 50 25°C 0 0 100 200 25°C 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=37.5A) Rev.1.0: May 2014 2 150°C S Irm 300 www.aosmd.com 100 200 300 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=37.5A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: May 2014 www.aosmd.com Page 8 of 9 Rev.1.0: May 2014 www.aosmd.com Page 9 of 9